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Gerecht, E.; Musante, C. F.; Jian, H.; Yngvesson, K. S.; Dickinson, J.; Waldman, J.; Gol'tsman, G. N.; Yagoubov, P. A.; Voronov, B. M.; Gershenzon, E. M. |
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Measured results for NbN phonon-cooled hot electron bolometric mixers at 0.6-0.75 THz, 1.56 THz, and 2.5 THz |
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1998 |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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Proc. 9th Int. Symp. Space Terahertz Technol. |
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105-114 |
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NbN HEB mixers |
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1587 |
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Schuck, C.; Pernice, W. H. P.; Minaeva, O.; Li, Mo; Gol'tsman, G.; Sergienko, A. V.; Tang, H. X. |
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Title |
Matrix of integrated superconducting single-photon detectors with high timing resolution |
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2013 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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23 |
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3 |
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2201007-2201007 |
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NbN SSPD, SNSPD, array, matrix |
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We demonstrate a large grid of individually addressable superconducting single photon detectors on a single chip. Each detector element is fully integrated into an independent waveguide circuit with custom functionality at telecom wavelengths. High device density is achieved by fabricating the nanowire detectors in traveling wave geometry directly on top of silicon-on-insulator waveguides. Our superconducting single photon detector matrix includes detector designs optimized for high detection efficiency, low dark count rate, and high timing accuracy. As an example, we exploit the high timing resolution of a particularly short nanowire design to resolve individual photon round-trips in a cavity ring-down measurement of a silicon ring resonator. |
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1051-8223 |
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1373 |
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Gayduchenko, I. A.; Fedorov, G. E.; Moskotin, M. V.; Yagodkin, D. I.; Seliverstov, S. V.; Goltsman, G. N.; Yu Kuntsevich, A.; Rybin, M. G.; Obraztsova, E. D.; Leiman, V. G.; Shur, M. S.; Otsuji, T.; Ryzhii, V. I. |
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Manifestation of plasmonic response in the detection of sub-terahertz radiation by graphene-based devices |
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2018 |
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Nanotechnol. |
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Nanotechnol. |
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29 |
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24 |
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245204 (1 to 8) |
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single layer graphene, graphene nanoribbons |
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We report on the sub-terahertz (THz) (129-450 GHz) photoresponse of devices based on single layer graphene and graphene nanoribbons with asymmetric source and drain (vanadium and gold) contacts. Vanadium forms a barrier at the graphene interface, while gold forms an Ohmic contact. We find that at low temperatures (77 K) the detector responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. Graphene nanoribbon devices display a similar pattern, albeit with a lower responsivity. |
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Physics Department, Moscow State University of Education, Moscow 119991, Russia. National Research Center 'Kurchatov Institute', 123182, Moscow, Russia |
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0957-4484 |
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PMID:29553479 |
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1308 |
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Baryshev, A. M.; Wild, W.; Likhachev, S. F.; Vdovin, V. F.; Goltsman, G. N.; Kardashev, N. S. |
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Main parameters and instrumentation of Millimetron space mission |
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2009 |
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Proc. 20th Int. Symp. Space Terahertz Technol. |
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Proc. 20th ISSTT |
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108 |
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SVLBI, Millimetron space observatory |
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Millimetron (official RosKosmos name ”Spectrum-M”) is a part of ambitious program called Spectrum intended to cover the whole electromagnetic spectrum with world class facilities. It is an approved mission included in Russian space program with the launch date in 2017..2019 time frame. The Millimetron satellite has a deployable 12 m diameter antenna with inner solid 4..6 m dish and a rim of petals. The mirror design is largely based on Radioastron mission concept that will be launched in 2009. If the antenna is passively cooled by radiation to open space, it would operate at approx. 50 K surface temperature, due to presence of a deployable three layer radiation screen. As a goal, there is a consideration of active cooling of antenna to 4 K, but this will depend on resources available to the project. Lagrangian libration point L2 considered for Millimetron orbit. There are four groups of scientific instruments envisioned: SVLBI instruments Space-Earth VLBI. It will allow to achieve unprecedented spatial resolution. Millimetron mission will attempt to achieve a mm/submm wave SVLBI. For that purpose, a SVLBI instrument covering selected ALMA bands and a standard VLBI band is envisioned, accompanied by a maser reference oscillator, a data digitizing and memory system, and a high speed data transmission link to ground. The ALMA bands can be extended to cover water lines if detector technology allows. Type of detector – heterodyne. Photometer/polarimeter. Recent progress in direct detector cameras with low spectral resolution, allows to propose a large format (5-10 kPixel) photometer camera on board of Millimetron mission. This camera can cover 0.1 – 2 THz region (with adequate amount of pixels per each subband). Wide band moderate resolution imaging spectrometer. Wide band moderate R = 1000 imaging spectrometer type instrument similar to SPICA SAFARI is planned, taking advantage of large cooled dish. It will cover the adequate spectral range allowable by antenna and will also work below 1 THz, as no ground instrument can have a cold main dish. High resolution spectrometer. For high resolution spectroscopy a heterodyne instrument is proposed, conceptually similar to HIFI on Herschel. This instrument will cover interesting frequency spots in 0.5..4 THz frequency range (using central part of antenna for higher frequency). It is sure that advances in LO and mixer technology will allow this frequency coverage. |
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1401 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
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Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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73 |
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1 |
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44-47 |
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uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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