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Author Title (up) Year Publication Volume Pages
Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. Electron-phonon interaction in ultrathin Nb films 1990 Sov. Phys. JETP 70 505-511
Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. Electron-phonon scattering rate in impure NbC films 1998 NASA/ADS Y35.08
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity 1996 Czech. J. Phys. 46 857-858
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. Electron–phonon interaction in disordered conductors 1999 Phys. Rev. B Condens. Matter 263-264 190-192
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. Energy relaxation of two-dimensional electrons in the quantum Hall effect regime 2000 JETP Lett. 71 31-34
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. Energy spectrum of acceptors in germanium and its response to a magnetic field 1977 Sov. Phys. JETP 45 769-776
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. Energy spectrum of free excitons in germanium 1973 JETP Lett. 18 93
Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I. Energy spectrum of the donors in GaAs and Ge and its reaction to a magnetic field 1977 Sov. Phys. JETP 45 555-565
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G. Energy-spectrum of shallow acceptors in Ge deformed strongly by a uniaxial pressure 1989 Sov. Phys. and Technics of Semiconductors 23 843-846
Gershenzon, E.; Goltsman, G.; Elantev, A.; Kagane, M. Energy-spectrum of small donors and acceptors in germanium and effect of magnetic-field on it 1978 Izv. Akad. Nauk SSSR, Seriya Fizicheskaya 42 1142-1148