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Gao, J. R., Hiajenius, M., Yang, Z. Q., Klapwijk, T. M., Miao, W., Shi, S. C., et al. (2006). Direct comparison of the sensitivity of a spiral and a twin-slot antenna coupled HEB mixer at 1.6 THz. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 59–62).
Abstract: To make a direct comparison of the sensitivity between a spiral and a twin slot antenna coupled HEB mixer, we designed both types of mixers and fabricated them in a single processing run and on the same wafer. Both mixers have similar dimensions of NbN bridges (1.5-2 pm x0.2 pm). At 1.6 THz we obtained a nearly identical receiver noise temperature from both mixers (only 5% difference), which is in a good agreement with the simulation based on semi analytical models for both antennas. In addition, by using a bandpass filter to reduce the direct detection effect and lowering the bath temperature to 2.4 K, we measured the lowest receiver noise temperature of 700 K at 1.63 THz using the twin-slot antenna mixer.
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Baryshev, A., Baselmans, J. J. A., Reker, S. F., Hajenius, M., Gao, J. R., Klapwijk, T. M., et al. (2005). Direct detection effect in hot electron bolometer mixers. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 463–464).
Abstract: NbN phonon cooled hot electron bolometer (HEB) mixers are currently the most sensitive heterodyne detectors at frequencies above 1.2 THz. They combine a good sensitivity (8-15 times the quantum limit), an IF bandwidth of the order of 4-6 GHz and a wide RF bandwidth from 0.7-5.2 THz. However, for use in a space based observatory, such as Herschel, it is of vital importance that the Local Oscillator (LO) power requirement of the mixer is compatible with the low output power of present day THz LO sources. This can be achieved by reducing the mixer volume and critical current. However, the large RF bandwidth and low LO power requirement of such a mixer result in a direct detection effect, characterized by a change in the bias current of the HEB when changing the RF signal from a black body load at 300 K to one at 77 K. As a result the measured sensitivity using a 300 K and 77 K calibration load differs significantly from the small signal sensitivity relevant for astronomical observations. In this article we describe a set of dedicated experiments to characterize the direct detection effect for a small volume quasi-optical NbN phonon cooled HEB mixer. We measure the direct detection effect in a small volume (0.15 μm · 1 μm · 3.5 nm) quasi- optical NbN phonon cooled HEB mixer at 1.6 THz. We found that the small signal sensitivity of the receiver is underestimated by approximately 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300 K and 77 K. Using a 200 GHz wide band-pass filter at the 4.2 K the direct detection effect virtually disappears. Heterodyne response measurements using water vapor absorption line in a gas cell confirms the existence and a magnitude of a direct detection effect. We also propose a theoretical explanation using uniform electron heating model. This direct detection effect has important implications for the calibration procedure of these receivers in real telescope systems. We are developing Nb HEBs for a large-format, diffusion-cooled hot electron bolometer (HEB) array submillimeter camera. The goal is to produce a 64 pixel array together with the University of Arizona to be used on the HHT on Mt Graham. It is designed to detect in the 850 GHz atmospheric window. We have fabricated Nb HEBs using a new angle- deposition process, which had previously produced high quality Nb-Au bilayer HEB devices at Yale. [1] We have characterized these devices using heterodyne mixing at ~30 GHz to compare to 345 GHz tests at the University of Arizona. We can also directly compare our Nb HEB mixers to SIS mixers in this same 345 GHz system. This allows us to rigorously calibrate the system’s losses and extract the mixer noise temperature in a well characterized mixer block, before undertaking the 850 GHz system. Here we give a report on the initial devices we have fabricated and characterized. * Department of Applied Physics, Yale University ** Department of Astronomy, University of Arizona [1] Applied Physics Letters 84, Number 8; p.1404-7, Feb 23 (2004)
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Baselmans, J. J. A., Baryshev, A., Reker, S. F., Hajenius, M., Gao, J. R., Klapwijk, T. M., et al. (2005). Direct detection effect in small volume hot electron bolometer mixers. Appl. Phys. Lett., 86(16), 163503 (1 to 3).
Abstract: We measure the direct detection effect in a small volume (0.15μm×1μm×3.5nm)(0.15μm×1μm×3.5nm) quasioptical NbN phonon cooled hot electronbolometermixer at 1.6THz1.6THz. We find that the small signal sensitivity of the receiver is underestimated by 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300K300K and 77K77K. Using a 200GHz200GHzbandpass filter at 4.2K4.2K the direct detection effect virtually disappears. This has important implications for the calibration procedure of these receivers in real telescope systems.
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Lobanov, Y. V., Tong, C. - Y. E., Hedden, A. S., Blundell, R., Voronov, B. M., & Gol'tsman, G. N. (2011). Direct measurement of the gain and noise bandwidths of HEB mixers. IEEE Trans. Appl. Supercond., 21(3), 645–648.
Abstract: The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement.
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Baselmans, J. J. A., Hajenius, M., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2004). Doubling of sensitivity and bandwidth in phonon cooled hot electron bolometer mixers. Appl. Phys. Lett., 84(11), 1958–1960.
Abstract: We demonstrate that the performance of NbN lattice cooled hot electron bolometer mixers depends strongly on the interface quality between the bolometer and the contact structure. We show experimentally that both the receiver noise temperature and the gain bandwidth can be improved by more than a factor of 2 by cleaning the interface and adding an additional superconducting interlayer to the contact pad. Using this we obtain a double sideband receiver noise temperature TN,DSB=950 K
at 2.5 THz and 4.3 K, uncorrected for losses in the optics. At the same bias point, we obtain an IF gain bandwidth of 6 GHz.
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Baselmans, J. J. A., Hajenius, M., Gao, J., de Korte, P., Klapwijk, T. M., Voronov, B., et al. (2004). Doubling of sensitivity and bandwidth in phonon-cooled hot-electron bolometer mixers. In J. Zmuidzinas, W. S. Holland, & S. Withington (Eds.), Proc. SPIE (Vol. 5498, pp. 168–176). SPIE.
Abstract: NbN hot electron bolometer (HEB) mixers are at this moment the best heterodyne detectors for frequencies above 1 THz. However, the fabrication procedure of these devices is such that the quality of the interface between the NbN superconducting film and the contact structure is not under good control. This results in a contact resistance between the NbN bolometer and the contact pad. We compare identical bolometers, with different NbN – contact pad interfaces, coupled with a spiral antenna. We find that cleaning the NbN interface and adding a thin additional superconductor prior to the gold contact deposition improves the noise temperature and the bandwidth of the HEB mixers with more than a factor of 2. We obtain a DSB noise temperature of 950 K at 2.5 THz and a Gain bandwidth of 5-6 GHz. For use in real receiver systems we design small volume (0.15x1 micron) HEB mixers with a twin slot antenna. We find that these mixers combine good sensitivity (900 K at 1.6 THz) with low LO power requirement, which is 160 – 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5.
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Jukna, A., Kitaygorsky, J., Pan, D., Cross, A., Perlman, A., Komissarov, I., et al. (2008). Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons. Acta Physica Polonica A, 113(3), 955–958.
Abstract: Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe.
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Shurakov, A., Prikhodko, A., Mikhailov, D., Belikov, I., Kaurova, N., Voronov, B., et al. (2020). Efficiency of a microwave reflectometry for readout of a THz multipixel Schottky diode direct detector. In J. Phys.: Conf. Ser. (Vol. 1695, 012156).
Abstract: In this paper we report on the results of investigation of efficiency of a microwave reflectometry for readout of a terahertz multipixel Schottky diode direct detector. Decent capabilities of the microwave reflectometry readout were earlier justified by us for a hot electron bolometric direct detector. In case of a planar Schottky diode, we observed increase of an optical noise equivalent power by a factor of 2 compared to that measured within a conventional readout scheme. For implementation of a multipixel camera, a microwave reflectometer is to be used to readout each row of the camera, and the row switching is to be maintained by a CMOS analog multiplexer. The diodes within a row have to be equipped with filters to distribute the probing microwave signal properly. The simultaneous use of analog multiplexing and microwave reflectometry enables to reduce the camera response time by a factor of its number of columns.
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Florya, I. N., Korneeva, Y. P., Sidorova, M. V., Golikov, A. D., Gaiduchenko, I. A., Fedorov, G. E., et al. (2015). Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs. In EPJ Web of Conferences (Vol. 103, 10004 (1 to 2)).
Abstract: We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model.
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Casaburi, A., Ejrnaes, M., Quaranta, O., Gaggero, A., Mattioli, F., Leoni, R., et al. (2008). Experimental characterization of NbN nanowire optical detectors with parallel stripline configuration. In J. Phys.: Conf. Ser. (Vol. 97, 012265 (1 to 6)). IOP Publishing.
Abstract: We have developed a novel geometrical configuration for NbN-based superconducting single photon optical detector (SSPD) that achieves two goals: a much lower intrinsic impedance, and a consequently greater bandwidth, and a much larger signal amplitude compared to the standard meandered configuration. This has been obtained by implementing a properly designed parallel stripline structure where a cascade switching mechanism occurs when one of the striplines is hit by an optical photon. The overall switching occurs synchronously and in a very short time, giving rise to a strong and fast voltage pulse. The SSPD have been realized using state of the art NbN deposition technology and e-beam lithography. The strips are 100 nm wide and 5 μm long and have been realized with 4 nm NbN film on sapphire and Si substrate. We report on experimental characterization of such novel devices. The performances of the proposed novel type of SSPD are compared with standard SSPD design and results in terms of signal amplitude, risetime and effective detection area.
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