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Shangina, E. L., Smirnov, K. V., Morozov, D. V., Kovalyuk, V. V., Gol’tsman, G. N., Verevkin, A. A., et al. (2010). Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semicond., 44(11), 1427–1429.
Abstract: The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).
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Hase, M., Katsuragawa, M., Constantinescu, A. M., & Petek, H. (2012). Frequency comb generation at terahertz frequencies by coherent phonon excitation in silicon. Nat. Photon., 6, 243–247.
Abstract: High-order nonlinear light–matter interactions in gases enable the generation of X-ray and attosecond light pulses, metrology and spectroscopy1. Optical nonlinearities in solid-state materials are particularly interesting for combining optical and electronic functions for high-bandwidth information processing2. Third-order nonlinear optical processes in silicon have been used to process optical signals with bandwidths greater than 1 GHz (ref. 2). However, fundamental physical processes for a silicon-based optical modulator in the terahertz bandwidth range have not yet been explored. Here, we demonstrate ultrafast phononic modulation of the optical index of silicon by irradiation with intense few-cycle femtosecond pulses. The anisotropic reflectivity modulation by the resonant Raman susceptibility at the fundamental frequency of the longitudinal optical phonon of silicon (15.6 THz) generates a frequency comb up to seventh order. All-optical >100 THz frequency comb generation is realized by harnessing the coherent atomic motion of the silicon crystalline lattice at its highest mechanical frequency.
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Semenov, A. D., Hübers, H. –W., Schubert, J., Gol'tsman, G. N., Elantiev, A. I., Voronov, B. M., et al. (2000). Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer. In Proc. 11th Int. Symp. Space Terahertz Technol. (pp. 39–48).
Abstract: We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
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Matsushima, F., Odashima, H., Iwasaki, T., Tsunekawa, S., & Takagi, K. (1994). Frequency measurement of pure rotational transitions of H2O from 0.5 to 5 THz. In Conference on precision electromagnetic measurements digest (pp. 23–24).
Abstract: Frequencies of H2O pure rotational transitions from 0.5 to 5 THz have been measured with an accuracy of one part in 109 using a tunable far-infrared spectrometer. Measured frequencies of more than a hundred spectral lines provide an excellent wavelength and frequency calibration standard for the far infrared.
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Hocker, L. O., Sokoloff, D. R., Daneu, V., Szoke, A., & Javan, A. (1968). Frequency mixing in the infrared and far-infrared using a metal-to-metal point contact diode. Appl Phys Lett, 12(12).
Abstract: Metalâ€toâ€metal point contact diodes were used to obtain the 54â€GHz beat notes between two adjacent 10.6â€μ CO2 laser transitions. The speed of the diodes in the farâ€infrared is at least 1000 GHz. This was tested with a 337â€μ HCN laser.
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