| Author |
Title  |
Year |
Publication |
Volume |
Pages |
| Crowe, T. W.; Mattauch, R. J.; Roser, H. P.; Bishop, W. L.; Peatman, W. C. B.; Liu, X. |
GaAs Schottky diodes for THz mixing applications |
1992 |
Proc. IEEE |
80 |
1827-1841 |
| Ekstörm, H.; Kollberg, E.; Yagoubov, P.; Gol'tsman, G.; Gershenzon, E.; Yngvesson, S. |
Gain and noise bandwidth of NbN hot-electron bolometric mixers |
1997 |
Appl. Phys. Lett. |
70 |
3296-3298 |
| Maslennikova, Anna; Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Kaurova, Natalia; Voronov, Boris; Gol’tsman, Gregory |
Gain bandwidth and noise temperature of NbN HEB mixers with simultaneous phonon and diffusion cooling |
2010 |
Proc. 21th Int. Symp. Space Terahertz Technol. |
|
218-219 |
| Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
Gain bandwidth and noise temperature of NbTiN HEB mixer |
2003 |
Proc. 14th Int. Symp. Space Terahertz Technol. |
|
276-285 |
| Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
2017 |
Proc. 28th Int. Symp. Space Terahertz Technol. |
|
147-148 |
