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Author Semenov, A. D.; Hübers, H.-W.; Gol’tsman, G. N.; Smirnov, K. url  doi
isbn  openurl
  Title (up) Superconducting quantum detector for astronomy and X-ray spectroscopy Type Conference Article
  Year 2002 Publication Proc. Int. Workshop on Supercond. Nano-Electronics Devices Abbreviated Journal Proc. Int. Workshop on Supercond. Nano-Electronics Devices  
  Volume Issue Pages 201-210  
  Keywords NbN SSPD, SNSPD, SQD, superconducting quantum detectors, X-ray spectroscopy  
  Abstract We propose the novel concept of ultra-sensitive energy-dispersive superconducting quantum detectors prospective for applications in astronomy and X-ray spectroscopy. Depending on the superconducting material and operation conditions, such detector may allow realizing background limited noise equivalent power 10−21 W Hz−1/2 in the terahertz range when exposed to 4-K background radiation or counting of 6-keV photon with almost 10—4 energy resolution. Planar layout and relatively simple technology favor integration of elementary detectors into a detector array.  
  Address Naples, Italy  
  Corporate Author Thesis  
  Publisher Springer Place of Publication Boston, MA Editor Pekola, J.; Ruggiero, B.; Silvestrini, P.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-1-4615-0737-6 Medium  
  Area Expedition Conference International Workshop on Superconducting Nano-Electronics Devices, May 28-June 1, 2001  
  Notes Approved no  
  Call Number semenov2002superconducting Serial 1525  
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Author Heusinger, M. A.; Nebosis,R. S.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. url  doi
openurl 
  Title (up) Temperature dependence of bolometric and non-bolometric photoresponse of a structured YBa2Cu3O7-δ thin film Type Conference Article
  Year 1993 Publication Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences Abbreviated Journal Phonon Scattering in Condensed Matter VII. Springer Series in Solid-State Sciences  
  Volume 112 Issue Pages 193-195  
  Keywords YBCO HTS detectors  
  Abstract We investigated the temperature dependence of the transient voltage photoresponse of a current biased structured YBa2Cu3O7−δ thin film in its transition temperature region, around 79 K. Both, picosecond nonbolometric and nanosecond bolometric response to ultrashort far-infrared laser pulses were found for frequencies between 25 cm−1 and 215 cm−1. We will discuss optimum conditions for radiation detection and present an analysis of the dynamical behaviour of excited high T c thin films.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Meissner, M.; Pohl, R. O.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Seventh International Conference, Cornell University, Ithaca, New York, August 3-7, 1992  
  Notes Approved no  
  Call Number Serial 1663  
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Author Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. url  doi
openurl 
  Title (up) Towards to the development of THz detectors based on carbon nanostructures Type Conference Article
  Year 2018 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.  
  Volume 1092 Issue Pages 012039 (1 to 4)  
  Keywords CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors  
  Abstract Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1742-6588 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1302  
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Author Semenov, A. D.; Sergeev, A. V.; Kouminov, P.; Goghidze, I. G.; Heusinger, M. A.; Nebosis, R. S.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. url  isbn
openurl 
  Title (up) Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements Type Conference Article
  Year 1993 Publication Proc. 1st European Conf. on Appl. Supercond. Abbreviated Journal Proc. 1st European Conf. on Appl. Supercond.  
  Volume 2 Issue Pages 1443-1446  
  Keywords YBCO HTS detectors  
  Abstract Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor Freyhardt, H. C.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 3-88355-197-X Medium  
  Area Expedition Conference 1st European conference on applied superconductivity  
  Notes Approved no  
  Call Number Serial 1661  
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Author Ryzhii, V.; Otsuji, T.; Ryzhii, M.; Leiman, V. G.; Fedorov, G.; Goltzman, G. N.; Gayduchenko, I. A.; Titova, N.; Coquillat, D.; But, D.; Knap, W.; Mitin, V.; Shur, M. S. url  doi
openurl 
  Title (up) Two-dimensional plasmons in lateral carbon nanotube network structures and their effect on the terahertz radiation detection Type Journal Article
  Year 2016 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.  
  Volume 120 Issue 4 Pages 044501 (1 to 13)  
  Keywords carbon nanotubes, CNT detectors, plasmons  
  Abstract We consider the carrier transport and plasmonic phenomena in the lateral carbon nanotube (CNT) networks forming the device channel with asymmetric electrodes. One electrode is the Ohmic contact to the CNT network and the other contact is the Schottky contact. These structures can serve as detectors of the terahertz (THz) radiation. We develop the device model for collective response of the lateral CNT networks which comprise a mixture of randomly oriented semiconductor CNTs (s-CNTs) and quasi-metal CNTs (m-CNTs). The proposed model includes the concept of the collective two-dimensional (2D) plasmons in relatively dense networks of randomly oriented CNTs (CNT “felt”) and predicts the detector responsivity spectral characteristics exhibiting sharp resonant peaks at the signal frequencies corresponding to the 2D plasmonic resonances. The detection mechanism is the rectification of the ac current due the nonlinearity of the Schottky contact current-voltage characteristics under the conditions of a strong enhancement of the potential drop at this contact associated with the plasmon excitation. The detector responsivity depends on the fractions of the s- and m-CNTs. The burning of the near-contact regions of the m-CNTs or destruction of these CNTs leads to a marked increase in the responsivity in agreement with our experimental data. The resonant THz detectors with sufficiently dense lateral CNT networks can compete and surpass other THz detectors using plasmonic effects at room temperatures.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1777  
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Author Korneev, A.; Minaeva, O.; Divochiy, A.; Antipov, A.; Kaurova, N.; Seleznev, V.; Voronov, B.; Gol’tsman, G.; Pan, D.; Kitaygorsky, J.; Slysz, W.; Sobolewski, R. url  doi
openurl 
  Title (up) Ultrafast and high quantum efficiency large-area superconducting single-photon detectors Type Conference Article
  Year 2007 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 6583 Issue Pages 65830I (1 to 9)  
  Keywords SSPD, SNSPD, superconducting NbN films, infrared single-photon detectors  
  Abstract We present our latest generation of superconducting single-photon detectors (SSPDs) patterned from 4-nm-thick NbN films, as meander-shaped  0.5-mm-long and  100-nm-wide stripes. The SSPDs exhibit excellent performance parameters in the visible-to-near-infrared radiation wavelengths: quantum efficiency (QE) of our best devices approaches a saturation level of  30% even at 4.2 K (limited by the NbN film optical absorption) and dark counts as low as 2x10-4 Hz. The presented SSPDs were designed to maintain the QE of large-active-area devices, but, unless our earlier SSPDs, hampered by a significant kinetic inductance and a nanosecond response time, they are characterized by a low inductance and GHz counting rates. We have designed, simulated, and tested the structures consisting of several, connected in parallel, meander sections, each having a resistor connected in series. Such new, multi-element geometry led to a significant decrease of the device kinetic inductance without the decrease of its active area and QE. The presented improvement in the SSPD performance makes our detectors most attractive for high-speed quantum communications and quantum cryptography applications.  
  Address  
  Corporate Author Thesis  
  Publisher Spie Place of Publication Editor Dusek, M.; Hillery, M.S.; Schleich, W.P.; Prochazka, I.; Migdall, A.L.; Pauchard, A.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1249  
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Author Goltsman, G. N. url  doi
openurl 
  Title (up) Ultrafast nanowire superconducting single-photon detector with photon number resolving capability Type Conference Article
  Year 2009 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 7236 Issue Pages 72360D (1 to 11)  
  Keywords PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films  
  Abstract In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Arakawa, Y.; Sasaki, M.; Sotobayashi, H.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1403  
Permanent link to this record
 

 
Author Nebosis, R. S.; Heusinger, M. A.; Schatz, W.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. url  doi
openurl 
  Title (up) Ultrafast photoresponse of a structured YBa2Cu3O7-δ thin film to ultrashort FIR laser pulses Type Journal Article
  Year 1993 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.  
  Volume 3 Issue 1 Pages 2160-2162  
  Keywords YBCO HTS detectors  
  Abstract The authors have investigated the photoinduced voltage response of a current-carrying structured YBa2Cu3O7-δ thin film to ultrashort far-infrared (FIR) laser pulses in the frequency range from 0.7 THz to 7 THz. The detector has shown an almost constant sensitivity of 1 mV/W and a noise equivalent power of less than 5*10/sup -7/ W/ square root Hz. The temperature dependence of the decay time of the detector signal was studied for temperatures around the transition temperature of the film ( approximately 80 K). For a detector temperature where dR/dT had its maximum, the authors observed bolometric signals with decay times of about 2 ns, and for lower temperatures they observed nonbolometric signals with decay times of approximately 120 ps; the duration of the nonbolometric signals was limited by the time resolution of the electronic registration equipment.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1658  
Permanent link to this record
 

 
Author Nebosis, R. S.; Heusinger, M. A.; Semenov, A. D.; Lang, P. T.; Schatz, W.; Steinke, R.; Renk, K. F.; Gol'tsman, G. N.; Karasik, B. S.; Gershenzon, E. M. url  doi
openurl 
  Title (up) Ultrafast photoresponse of an YBa2Cu3O7-δ film to far-infrared radiation pulses Type Journal Article
  Year 1993 Publication Opt. Lett. Abbreviated Journal Opt. Lett.  
  Volume 18 Issue 2 Pages 96-97  
  Keywords YBCO HTS detectors  
  Abstract We report the observation of an ultrafast photoresponse of a high-T(c), film to far-infrared radiation pulses. The response of a sample, consisting of a current-carrying structured YBa(2)Cu(3)O(7-delta) film cooled to liquid-nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far-infrared laser in the frequency range from 0.7 to 7 THz. We found that the response time was limited by the time resolution, 120 ps, of our electronic registration equipment.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0146-9592 ISBN Medium  
  Area Expedition Conference  
  Notes PMID:19802049 Approved no  
  Call Number Serial 1660  
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Author Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. url  doi
openurl 
  Title (up) Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors Type Journal Article
  Year 2015 Publication Carbon Abbreviated Journal Carbon  
  Volume 87 Issue Pages 330-337  
  Keywords carbon nanotubes, CNT detectors, field effect transistors, FET  
  Abstract Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0008-6223 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1778  
Permanent link to this record
 

 
Author Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  doi
openurl 
  Title (up) Wide-band highspeed Nb and YBaCuO detectors Type Journal Article
  Year 1991 Publication IEEE Trans. Magn. Abbreviated Journal IEEE Trans. Magn.  
  Volume 27 Issue 2 Pages 2836-2839  
  Keywords YBCO, HTS, Nb detectors  
  Abstract The physical limitations on the response time and the nature of nonequilibrium detection of radiation were investigated for Nb and YBCO film in a wide spectral range from millimeter to near-infrared wavelengths. In the case of ideal heat removal from the film, the detection mechanism is connected with an electron heating effect which is not selective over a wide spectral interval. For Nb, the dependence of the response time on the electron mean free path l and temperature T is tau varies as T/sup -2/l/sup -1/. The values of detectivity D* and tau are 3*10/sup 11/ W/sup -1/ Hz/sup 1/2/ cm and 5*10/sup -9/ s at T=1.6 K, respectively. For YBCO film the tau value of 1-2 ps at T=77 K was obtained; the NEP value of 3*10/sup -11/ W-Hz/sup -1/2/ can be obtained at T=77 K in the case of the optimal film matching to the radiation.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0018-9464 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 239  
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Author Шангина, Е. Л.; Смирнов, К. В.; Морозов, Д. В.; Ковалюк, В. В.; Гольцман, Г. Н.; Веревкин, А. А.; Торопов, А. И. openurl 
  Title (up) Концентрационная зависимость полосы преобразования смесителей субмиллиметрового диапазона на основе наноструктур AlGaAs/GaAs Type Journal Article
  Year 2010 Publication Изв. РАН Сер. Физ. Abbreviated Journal Изв. РАН Сер. Физ.  
  Volume 74 Issue 1 Pages 110-112  
  Keywords 2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth  
  Abstract Методом субмиллиметровой спектроскопии с высоким временным разрешением при Т = 4.2 К измерена концентрационная зависимость полосы преобразования гетеродинного детектирования гетероструктур AlGaAs/GaAs с двумерным электронным газом. С увеличением концентрации двумерных электронов ns = (1.6–6.6) · 1011см-2 ширина полосы преобразования f3dB уменьшается от 245 до 145 МГц. В исследованной области концентраций наблюдается зависимость f3dB , обусловленная рассеянием электронов на деформационном потенциале акустических фононов и пьезоэлектрическим рассеянием.  
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Russian Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Duplicated as 1217 Approved no  
  Call Number RPLAB @ gujma @ Serial 642  
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Author Семенов, А. В.; Девятов, И. А.; Рябчун, С. А.; Масленников, С. Н.; Масленникова, А. С.; Ларионов, П. А.; Воронов, Б. М.; Чулкова, Г. М. openurl 
  Title (up) Поглощение терагерцового электромагнитного излучения в “грязной” сверхпроводниковой пленке при произвольном виде спектральных функций Type Journal Article
  Year 2011 Publication Ж. Радиоэлектрон. Abbreviated Journal  
  Volume 10 Issue Pages 7  
  Keywords terahertz electromagnetic radiation; superconductors; detectors of terahertz range  
  Abstract A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel.

В технике Келдыша рассмотрена задача о поглощении мощности высокочастотного электромагнитного поля в сверхпроводнике, удовлетворяющем условию грязного предела. Получено выражение для члена источника в кинетическом уравнении для функции распределения квазичастиц, справедливое при произвольном виде спектральных функций. Этот результат имеет значение для развития последовательной микроскопической теории сверхпроводниковых детекторов излучения терагерцового диапазона, в частности, перспективных детекторов на кинетической индуктивности смещённой током сверхпроводниковой полоски и джозефсоновской индуктивности туннельного контакта.
 
  Address  
  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Duplicated as 1117 Approved no  
  Call Number RPLAB @ gujma @ Serial 713  
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Author Чулкова, Г. М.; Корнеев, А. А.; Смирнов, К. В.; Окунев, О. В. url  isbn
openurl 
  Title (up) Энергетическая релаксация в примесных металлах, двумерном электронном газе в AlGaAs-GaAs, сверхпроводниковых пленках NbN и детекторы субмиллиметрового и ик излучения на их основе Type Book Whole
  Year 2012 Publication Abbreviated Journal  
  Volume Issue Pages  
  Keywords 2DEG, AlGaAs/GaAs, NbN detectors  
  Abstract Монография посвящена обзору исследований влияния эффектов электронного беспорядка на электронное взаимодействие в металлах, сверхпроводниках, полупроводниках, а также в различных низкоразмерных структурах. Актуальность поднятых в монографии вопросов определяется интенсивным развитием нанотехнологий, созданием новых наноструктурированных материалов и уникальных наноэлементов для электроники и фотоники. Упругое электронное рассеяние на границах наноструктур качественно меняет взаимодействие электронов с фонолами, что, безусловно, должно учитываться при проектировании соответствующей элементной базы. Прикладная часть работы посвящена контролируемой модификации электронных процессов для оптимизации новых наносенсоров на основе электронного разогрева в сверхпроводниковых и полупроводниковых структурах. Монография предназначена для студентов старших курсов, аспирантов и начинающих следователей, работающих в области сверхпроводниковой наноэлектроники.  
  Address Москва  
  Corporate Author Thesis  
  Publisher Прометей, МПГУ Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN 978-5-4263-0118-4 Medium  
  Area Expedition Conference  
  Notes УДК: 537.311 Approved no  
  Call Number Serial 1818  
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