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Antipov, S.; Trifonov, A.; Krause, S.; Meledin, D.; Desmaris, V.; Belitsky, V.; Gol’tsman, G. |
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Gain bandwidth of NbN HEB mixers on GaN buffer layer operating at 2 THz local oscillator frequency |
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Conference Article |
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2017 |
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Proc. 28th Int. Symp. Space Terahertz Technol. |
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Proc. 28th Int. Symp. Space Terahertz Technol. |
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147-148 |
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NbN HEB mixers, GaN buffer-layer, IF bandwidth |
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In this paper, we present IF bandwidth measurement results of NbN HEB mixers, which are employing NbN thin films grown on a GaN buffer-layer. The HEB mixers were operated in the heterodyne regime at a bath temperature of approximately 4.5 K and with a local oscillator operating at a frequency of 2 THz. A quantum cascade laser served as the local oscillator and a reference synthesizer based on a BWO generator (130-160 GHz) and a semiconductor superlattice (SSL) frequency multiplier was used as a signal source. By changing the LO frequency it was possible to record the IF response or gain bandwidth of the HEB with a spectrum analyzer at the operation point, which yielded lowest noise temperature. The gain bandwidth that was recorded in the heterodyne regime at 2 THz amounts to approximately 5 GHz and coincides well with a measurement that has been performed at elevated bath temperatures and lower LO frequency of 140 GHz. These findings strongly support that by using a GaN buffer-layer the phonon escape time of NbN HEBs can be significantly lower as compared to e.g. Si substrate, thus, providing higher gain bandwidth. |
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1175 |
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Vahtomin, Yuriy B.; Finkel, Matvey I.; Antipov, Sergey V.; Voronov, Boris M.; Smirnov, Konstantin V.; Kaurova, Natalia S.; Drakinski, Vladimir N.; Gol'tsman, Gregogy N. |
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Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si |
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Conference Article |
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2002 |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 13th Int. Symp. Space Terahertz Technol. |
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259-270 |
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NbN HEB mixers, conversion gain bandwidth |
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We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate. |
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Cambridge, MA, USA |
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Harvard university |
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325 |
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Semenov, A. D.; Gousev, Y. P.; Nebosis, R. S.; Renk, K. F.; Yagoubov, P.; Voronov, B. M.; Gol’tsman, G. N.; Syomash, V. D.; Gershenzon, E. M. |
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Title |
Heterodyne detection of THz radiation with a superconducting hot‐electron bolometer mixer |
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1996 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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69 |
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2 |
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260-262 |
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NbN HEB mixers |
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We report on the use of a superconducting hot‐electron bolometer mixer for heterodyne detection of terahertz radiation. Radiation with a wavelength of 119 μm was coupled to the mixer, a NbN microbridge, by a hybrid quasioptical antenna consisting of an extended hyperhemispherical lens and a planar logarithmic spiral antenna. We found, at an intermediate frequency of 1.5 GHz, a system double side band noise temperature of ≊40 000 K and conversion losses of 25 dB. We also discuss the possibilities of further improvement of the mixer performance. |
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0003-6951 |
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1610 |
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Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Schubert, J.; Hubers, H.-W.; Schwaab, G.; Gol'tsman, G.; Gershenzon, E. |
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Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies |
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1999 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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9 |
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2 |
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3757-3760 |
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NbN HEB mixers |
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The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB. |
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1051-8223 |
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1569 |
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Hubers, H.-W.; Semenov, A.; Richter, H.; Schwarz, M.; Gunther, B.; Smirnov, K.; Gol’tsman, G.; Voronov, B. |
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Title |
Heterodyne receiver for 3-5 THz with hot-electron bolometer mixer |
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Conference Article |
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2004 |
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Proc. SPIE |
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Proc. SPIE |
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5498 |
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579-586 |
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NbN HEB mixers |
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Heterodyne receivers for applications in astronomy and planetary research need quantum limited sensitivity. In instruments which are currently build for SOFIA and Herschel superconducting hot electron bolometers (HEB) will be used to achieve this goal at frequencies above 1.4 THz. The local oscillator and the mixer are the most critical components for a heterodyne receiver operating at 3-5 THz. The design and performance of an optically pumped THz gas laser optimized for this frequency band will be presented. In order to optimize the performance for this frequency hot electron bolometer mixers with different in-plane dimensions and logarithmic-spiral feed antennas have been investigated. Their noise temperatures and beam patterns were measured. Above 3 THz the best performance was achieved with a superconducting bridge of 2.0 x 0.2 μm2 incorporated in a logarithmic spiral antenna. The DSB noise temperatures were 2700 K, 4700 K and 6400 K at 3.1 THz, 4.3 THz and 5.2 THz, respectively. The results demonstrate that the NbN HEB is very well suited as a mixer for THz heterodyne receivers up to at least 5 THz. |
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SPIE |
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Zmuidzinas, J.; Holland, W.S.; Withington, S. |
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Millimeter and Submillimeter Detectors for Astronomy II |
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1483 |
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