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Author Meledin, D.; Tong, C. Y.-E.; Blundell, R.; Kaurova, N.; Smirnov, K.; Voronov, B.; Gol'tsman, G.
Title (down) Study of the IF bandwidth of NbN HEB mixers based on crystalline quartz substrate with an MgO buffer layer Type Journal Article
Year 2003 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 13 Issue 2 Pages 164-167
Keywords NbN HEB mixer
Abstract In this paper, we present the results of IF bandwidth measurements on 3-4 nm thick NbN hot electron bolometer waveguide mixers, which have been fabricated on a 200-nm thick MgO buffer layer deposited on a crystalline quartz substrate. The 3-dB IF bandwidth, measured at an LO frequency of 0.81 THz, is 3.7 GHz at the optimal bias point for low noise receiver operation. We have also made measurements of the IF dynamic impedance, which allow us to evaluate the intrinsic electron temperature relaxation time and self-heating parameters at different bias conditions.
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Call Number Serial 341
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Author Ryabchun, S.; Tong, C.-Y. E.; Blundell, R.; Kimberk, R.; Gol'tsman, G.
Title (down) Study of the effect of microwave radiation on the operation of HEB mixers in the terahertz frequency range Type Journal Article
Year 2007 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 17 Issue 2 Pages 391-394
Keywords NbN HEB mixers
Abstract We have investigated the effect of injecting microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the hot-electron bolometer mixer incorporated into a THz heterodyne receiver. More specifically, we show that exposing the mixer to microwave radiation does not cause a significant rise of the receiver noise temperature and fall of the mixer conversion gain so long as the microwave power is a small fraction of local oscillator power. The injection of a small, but controlled amount of microwave power therefore enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the gain stability of hot electron bolometer mixer receivers.
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 1427
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Author Ryabchun, Sergey; Tong, Cheuk-Yu Edward; Blundell, Raymond; Gol'tsman, Gregory
Title (down) Stabilization scheme for hot-electron bolometer receivers using microwave radiation Type Journal Article
Year 2009 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 19 Issue 1 Pages 14-19
Keywords HEB, mixer, Allan variance, stabilization, radiometer equation
Abstract We present the results of a stabilization scheme for terahertz receivers based on NbN hot-electron bolometer (HEB) mixers that uses microwave radiation with a frequency much lower than the gap frequency of NbN to compensate for mixer current fluctuations. A feedback control loop, which actively controls the power level of the injected microwave radiation, has successfully been implemented to stabilize the operating point of the HEB mixer. This allows us to increase the receiver Allan time to 10 s and also improve the temperature resolution of the receiver by about 30% in the total power mode of operation.
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number RPLAB @ lobanovyury @ Serial 559
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Author Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K.
Title (down) Spiral antenna NbN hot-electron bolometer mixer at submm frequencies Type Journal Article
Year 1997 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 7 Issue 2 Pages 3395-3398
Keywords NbN HEB mixers
Abstract We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB.
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 1597
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Author Titova, N.; Kardakova, A. I.; Tovpeko, N.; Ryabchun, S.; Mandal, S.; Morozov, D.; Klemencic, G. M.; Giblin, S. R.; Williams, O. A.; Goltsman, G. N.; Klapwijk, T. M.
Title (down) Slow electron–phonon cooling in superconducting diamond films Type Journal Article
Year 2017 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 27 Issue 4 Pages 1-4
Keywords superconducting diamond films, electron-phonon cooling
Abstract We have measured the electron-phonon energy-relaxation time, τ eph , in superconducting boron-doped diamond films grown on silicon substrate by chemical vapor deposition. The observed electron-phonon cooling times vary from 160 ns at 2.70 K to 410 ns at 1.8 K following a T -2-dependence. The data are consistent with the values of τ eph previously reported for single-crystal boron-doped diamond films epitaxially grown on diamond substrate. Such a noticeable slow electron-phonon relaxation in boron-doped diamond, in combination with a high normal-state resistivity, confirms a potential of superconducting diamond for ultrasensitive superconducting bolometers.
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ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1168
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