Records |
Author |
Yates, S. J. C.; Baryshev, A. M.; Baselmans, J. J. A.; Klein, B.; Güsten, R. |
Title |
Fast Fourier transform spectrometer readout for large arrays of microwave kinetic inductance detectors |
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Journal Article |
Year |
2009 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
Volume |
95 |
Issue |
4 |
Pages |
3 |
Keywords |
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Abstract |
Microwave kinetic inductance detectors have great potential for large, very sensitive detector arrays for use in, for example, submillimeter imaging. Being intrinsically readout in the frequency domain, they are particularly suited for frequency domain multiplexing allowing ~1000 s of devices to be readout with one pair of coaxial cables. However, this moves the complexity of the detector from the cryogenics to the warm electronics. We present here the concept and experimental demonstration of the use of fast Fourier transform spectrometer readout, showing no deterioration of the noise performance compared to the low noise analog mixing while allowing high multiplexing ratios. |
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RPLAB @ gujma @ |
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697 |
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Hajenius, M.; Baselmans, J. J. A.; Baryshev, A.; Gao, J. R.; Klapwijk, T. M.; Kooi, J. W.; Jellema, W.; Yang, Z. Q. |
Title |
Full characterization and analysis of a terahertz heterodyne receiver based on a NbN hot electron bolometer |
Type |
Journal Article |
Year |
2006 |
Publication |
J. Appl. Phys. |
Abbreviated Journal |
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Volume |
100 |
Issue |
7 |
Pages |
074507 |
Keywords |
HEB |
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0021-8979 |
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RPLAB @ s @ |
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385 |
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Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G. |
Title |
Hot electron bolometer mixers with improved interfaces: sensitivity, LO power and stability |
Type |
Conference Article |
Year |
2004 |
Publication |
Proc. 15th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 15th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
17-24 |
Keywords |
NbN HEB mixers |
Abstract |
We study twin slot antenna coupled NbN hot electron bolometer mixers with an improved contact structure and a small volume, ranging from 1 µm × 0.1 µm to 2 × 0.3 µm. We obtain a DSB receiver noise temperature of 900 K at 1.6 THz and 940 K at 1.9 THz. To explore the practical usability of such small HEB mixers we evaluate the LO power requirement, the sensitivity and the stability. We find that the LO power requirement of the smallest mixers is reduced to about 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5. The stability of these receivers is characterized using a measurement of the Allan Variance. We find an Allan time of 0.5 sec. in an 80 MHz bandwidth. A small increase in stability can be reached by using a higher bias at the expense of a significant amount of sensitivity. The stability is sufficient for spectroscopic applications in a 1 MHz bandwidth at a 1 Hz chopping frequency. |
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1491 |
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Kooi, J. W.; Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M.; Dieleman, P.; Baryshev, A.; de Lange, G. |
Title |
IF impedance and mixer gain of NbN hot electron bolometers |
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Journal Article |
Year |
2007 |
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J. Appl. Phys. |
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101 |
Issue |
4 |
Pages |
044511 |
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0021-8979 |
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RPLAB @ s @ |
Serial |
445 |
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Author |
Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G. |
Title |
Improved NbN phonon cooled hot electron bolometer mixers |
Type |
Conference Article |
Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Volume |
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Issue |
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Pages |
413-423 |
Keywords |
NbN HEB mixers |
Abstract |
NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies. |
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Tucson, USA |
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337 |
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