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Author Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G.
Title (up) Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields Type Journal Article
Year 1972 Publication Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников Abbreviated Journal Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников
Volume 6 Issue Pages 362-363
Keywords Ge, cyclotron resonance, quantizing magnetic fields
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Call Number Serial 1774
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Author Gershenson, M. E.; Gong, D.; Sato, T.; Karasik, B. S.; Sergeev, A. V.
Title (up) Millisecond electron-phonon relaxation in ultrathin disordered metal films at millikelvin temperatures Type Journal Article
Year 2001 Publication Appl. Phys. Lett. Abbreviated Journal
Volume 79 Issue Pages 2049-2051
Keywords HEB detector, FIR, far infrared
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Call Number RPLAB @ s @ heb_eph_interaction_Gershenzon Serial 315
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Author Dryazgov, M.; Semenov, A.; Manova, N.; Korneeva, Y.; Korneev, A.
Title (up) Modelling of normal domain evolution after single-photon absorption of a superconducting strip of micron width Type Conference Article
Year 2020 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 1695 Issue Pages 012195 (1 to 4)
Keywords SSPD modelling, SNSPD
Abstract The present paper describes a modelling of normal domain evolution in superconducting strip of micron width using solving differential equations describing the temperature and current changes. The solving results are compared with experimental data. This comparison demonstrates the high accuracy of the model. In future, it is possible to employ this model for improvement of single photon detector based on micron-scale superconducting strips.
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ISSN 1742-6588 ISBN Medium
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Notes Approved no
Call Number Serial 1785
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Author Rasulova, G. K.; Brunkov, P. N.; Pentin, I. V.; Kovalyuk, V. V.; Gorshkov, K. N.; Kazakov, A. Y.; Ivanov, S. Y.; Egorov, A. Y.; Sakseev, D. A.; Konnikov, S. G.
Title (up) Mutual synchronization of two coupled self-oscillators based on GaAs/AlGaAs superlattices Type Journal Article
Year 2011 Publication Tech. Phys. Abbreviated Journal Tech. Phys.
Volume 56 Issue 6 Pages 826-830
Keywords GaAs/AlGaAs superlattices
Abstract The interaction of self-oscillators based on 30-period weakly coupled GaAs/AlGaAs superlattices is studied. The action of one self-oscillator on the other was observed for a constant bias voltage in the absence of generation of self-sustained oscillations in one of the oscillators. It is shown that induced oscillations in a forced oscillator appear due to excitation of oscillations in the system of coupled oscillators forming the electric-field domain wall at the frequency of one of the higher harmonics of a forcing oscillation.
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ISSN 1063-7842 ISBN Medium
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Notes Approved no
Call Number Serial 1214
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Author Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V.
Title (up) NbN single-photon detectors with saturated dependence of quantum efficiency Type Journal Article
Year 2018 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 31 Issue 3 Pages 035011 (1 to 8)
Keywords NbN SSPD, SNSPD
Abstract The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.
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ISSN 0953-2048 ISBN Medium
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Notes Approved no
Call Number Serial 1232
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Author Tong, C.-Y.E.; Meledin, D.V.; Marrone, D.P.; Paine, S.N.; Gibson, H.; Blundell, R.
Title (up) Near field vector beam measurements at 1 THz Type Journal Article
Year 2003 Publication IEEE Microw. Compon. Lett. Abbreviated Journal
Volume 13 Issue 6 Pages 235-237
Keywords HEB, mixer, waveguide, LO power, local oscillator power, saturation effect, dynamic range
Abstract We have performed near-field vector beam measurements at 1.03 THz to characterize and align the receiver optics of a superconducting receiver. The signal source is a harmonic generator mounted on an X-Y translation stage. We model the measured two-dimensional complex beam pattern by a fundamental Gaussian mode, from which we derive the position of the beam center, the beam radius and the direction of propagation. By performing scans in the planes separated by 400 mm, we have confirmed that our beam pattern measurements are highly reliable.
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ISSN 1531-1309 ISBN Medium
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Notes Approved no
Call Number RPLAB @ lobanovyury @ Serial 574
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Author Karasik, B. S.; Elantiev, A. I.
Title (up) Noise temperature limit of a superconducting hot-electron bolometer mixer Type Journal Article
Year 1996 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 68 Issue 6 Pages 853-855
Keywords HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth
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ISSN 0003-6951 ISBN Medium
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Notes Approved no
Call Number Serial 260
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Author Elantev, Andrey I.; Karasik, Boris S.
Title (up) Noise temperature of a superconducting hot-electron mixer Type Conference Article
Year 1994 Publication Proc. 5th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 5th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 225
Keywords HEB mixers
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Call Number Serial 1645
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Author Schroeder, E.; Mauskopf, P.; Pilyavsky, G.; Sinclair, A.; Smith, N.; Bryan, S.; Mani, H.; Morozov, D.; Berggren, K.; Zhu, D.; Smirnov, K.; Vakhtomin, Y.
Title (up) On the measurement of intensity correlations from laboratory and astronomical sources with SPADs and SNSPDs Type Conference Article
Year 2016 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 9907 Issue Pages 99070P (1 to 13)
Keywords SPAD, NbN SSPD applications, SNSPD
Abstract We describe the performance of detector modules containing silicon single photon avalanche photodiodes (SPADs) and superconducting nanowire single photon detectors (SNSPDs) to be used for intensity interferometry. The SPADs are mounted in fiber-coupled and free-space coupled packages. The SNSPDs are mounted in a small liquid helium cryostat coupled to single mode fiber optic cables which pass through a hermetic feed-through. The detectors are read out with microwave amplifiers and FPGA-based coincidence electronics. We present progress on measurements of intensity correlations from incoherent sources including gas-discharge lamps and stars with these detectors. From the measured laboratory performance of the correlation system, we estimate the sensitivity to intensity correlations from stars using commercial telescopes and larger existing research telescopes.
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Publisher SPIE Place of Publication Editor Malbet, F.; Creech-Eakman, M.J.; Tuthill, P.G.
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Area Expedition Conference Optical and Infrared Interferometry and Imaging V
Notes Approved no
Call Number Serial 1809
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Author Finkel, M.; Thierschmann, H.; Galatro, L.; Katan, A. J.; Thoen, D. J.; de Visser, P. J.; Spirito, M.; Klapwijk, T. M.
Title (up) Performance of THz components based on microstrip PECVD SiNx technology Type Journal Article
Year 2017 Publication IEEE Trans. THz Sci. Technol. Abbreviated Journal IEEE Trans. THz Sci. Technol.
Volume 7 Issue 6 Pages 765-771
Keywords transmission line measurements, power transmission lines, dielectrics, couplers, submillimeter wave circuits, coplanar waveguides, micromechanical devices
Abstract We present a performance analysis of passive THz components based on Microstrip transmission lines with a 2-μmthin plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNX) dielectric layer. A set of thru-reflect-line calibration structures is used for basic transmission line characterizations. We obtain losses of 9 dB/mm at 300 GHz. Branchline hybrid couplers are realized that exhibit 2.5-dB insertion loss, 1-dB amplitude imbalance, and -26-dB isolation, in agreement with simulations. We use the measured center frequency to determine the dielectric constant of the PECVD SiN x , which yields 5.9. We estimate the wafer-to-wafer variations to be of the order of 1%. Directional couplers are presented which exhibit -12-dB transmission to the coupled port and -26 dB to the isolated port. For transmission lines with 5-μm-thin silicon nitride (SiN x ), we observe losses below 4 dB/mm. The thin SiN x dielectric membrane makes the THz components compatible with scanning probe microscopy cantilevers allowing the application of this technology in on-chip circuits of a THz near-field microscope.
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ISSN 2156-342X ISBN Medium
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Notes Approved no
Call Number Serial 1294
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