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Author Chulkova, G.; Milostnaya, I.; Tarkhov, M.; Korneev, A.; Minaeva, O.; Voronov, B.; Divochiy, A.; Gol'tsman, G.; Kitaygorsky, J.; Pan, D.; Sobolewski, R. url  openurl
  Title (up) Superconducting single-photon nanostructured detectors for advanced optical applications Type Conference Article
  Year 2006 Publication Proc. Symposium on Photonics Technologies for 7th Framework Program Abbreviated Journal  
  Volume 400 Issue Pages  
  Keywords SSPD, SNSPD  
  Abstract We present superconducting single-photon detectors (SSPDs) based on NbN thin-film nanostructures and operated at liquid helium temperatures. The SSPDs are made of ultrathin NbN films (2.5-4 nm thick, Tc= 9-11K) as meander-shaped nanowires covering the area of 10× 10 µm2. Our detectors are operated at the temperature well below the critical temperature Tc and are DC biased by a current Ib close to the meander critical current Ic. The operation principle of the detector is based on the use of the resistive region in a narrow ultra-thin superconducting stripe upon the absorption of an incident photon. The developed devices demonstrate high sensitivity and response speed in a broadband range from UV to mid-IR (up to 6 µm), making them very attractive for advanced optical technologies, which require efficient detectors of single quanta and low-density optical radiation.  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ sasha @ chulkova2006superconducting Serial 1021  
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Author Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. doi  openurl
  Title (up) Superconducting single-photon ultrathin NbN film detector Type Journal Article
  Year 2005 Publication Quantum Electronics Abbreviated Journal  
  Volume 35 Issue 8 Pages 698-700  
  Keywords NbN SSPD, SNSPD  
  Abstract Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
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  Area Expedition Conference  
  Notes Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN Approved no  
  Call Number Serial 383  
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Author Zhang, J.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Chulkova, G.; Gol’tsman, G. N. url  doi
openurl 
  Title (up) Time delay of resistive-state formation in superconducting stripes excited by single optical photons Type Journal Article
  Year 2003 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 67 Issue 13 Pages 132508 (1 to 4)  
  Keywords NbN SSPD, SNSPD  
  Abstract We have observed a 65(±5)-ps time delay in the onset of a resistive-state formation in 10-nm-thick, 130-nm-wide NbN superconducting stripes exposed to single photons. The delay in the photoresponse decreased to zero when the stripe was irradiated by multi-photon (classical) optical pulses. Our NbN structures were kept at 4.2 K, well below the material’s critical temperature, and were illuminated by 100-fs-wide optical pulses. The time-delay phenomenon has been explained within the framework of a model based on photon-induced generation of a hotspot in the superconducting stripe and subsequent, supercurrent-assisted, resistive-state formation across the entire stripe cross section. The measured time delays in both the single-photon and two-photon detection regimes agree well with theoretical predictions of the resistive-state dynamics in one-dimensional superconducting stripes.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1519  
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Author Zhang, J.; Verevkin, A.; Slysz, W.; Chulkova, G.; Korneev, A.; Lipatov, A.; Okunev, O.; Gol’tsman, G. N.; Sobolewski, Roman url  doi
openurl 
  Title (up) Time-resolved characterization of NbN superconducting single-photon optical detectors Type Conference Article
  Year 2017 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 10313 Issue Pages 103130F (1 to 3)  
  Keywords NbN SSPD, SNSPD  
  Abstract NbN superconducting single-photon detectors (SSPDs) are very promising devices for their picosecond response time, high intrinsic quantum efficiency, and high signal-to-noise ratio within the radiation wavelength from ultraviolet to near infrared (0.4 gm to 3 gm) [1-3]. The single photon counting property of NbN SSPDs have been investigated thoroughly and a model of hotspot formation has been introduced to explain the physics of the photon- counting mechanism [4-6]. At high incident flux density (many-photon pulses), there are, of course, a large number of hotspots simultaneously formed in the superconducting stripe. If these hotspots overlap with each other across the width w of the stripe, a resistive barrier is formed instantly and a voltage signal can be generated. We assume here that the stripe thickness d is less than the electron diffusion length, so the hotspot region can be considered uniform. On the other hand, when the photon flux is so low that on average only one hotspot is formed across w at a given time, the formation of the resistive barrier will be realized only when the supercurrent at sidewalks surpasses the critical current (jr) of the superconducting stripe [1]. In the latter situation, the formation of the resistive barrier is associated with the phase-slip center (PSC) development. The effect of PSCs on the suppression of superconductivity in nanowires has been discussed very recently [8, 9] and is the subject of great interest.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Armitage, J. C.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Opto-Canada: SPIE Regional Meeting on Optoelectronics, Photonics, and Imaging, 2002, Ottawa, Ontario, Canada  
  Notes Downloaded from http://www2.ece.rochester.edu/projects/ufqp/PDF/2002/213NbNTimeOPTO_b.pdf This artcle was published in 2017 with only first author indicated (Zhang, J.). There were 8 more authors! Approved no  
  Call Number Serial 1750  
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Author Verevkin, A.; Zhang, J.; Pearlman, A.; Slysz, W.; Sobolewski, Roman; Korneev, A.; Kouminov, P.; Okunev, O.; Chulkova, G.; Gol'tsman, G. url  openurl
  Title (up) Ultimate sensitivity of superconducting single-photon detectors in the visible to infrared range Type Miscellaneous
  Year 2004 Publication ResearchGate Abbreviated Journal ResearchGate  
  Volume Issue Pages  
  Keywords NbN SSPD, SNSPD  
  Abstract We present our quantum efficiency (QE) and noise equivalent power (NEP) measurements of the meandertype ultrathin NbN superconducting single-photon detector in the visible to infrared radiation range. The nanostructured devices with 3.5-nm film thickness demonstrate QE up to~ 10% at 1.3–1.55 µm wavelength, and up to 20% in the entire visible range. The detectors are sensitive to infrared radiation with the wavelengths down to~ 10 µm. NEP of about 2× 10-18 W/Hz1/2 was obtained at 1.3 µm wavelength. Such high sensitivity together with GHz-range counting speed, make NbN photon counters very promising for efficient, ultrafast quantum communications and another applications. We discuss the origin of dark counts in our devices and their ultimate sensitivity in terms of the resistive fluctuations in our superconducting nanostructured devices.  
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  Notes Not attributed to any publisher! File name: PR9VervekinSfin_f.doc; Author: JAOLEARY; Last modification date: 2004-02-26 Approved no  
  Call Number Serial 1751  
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Author Okunev, O.; Smirnov, K.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G.; Zhang, J.; Slysz, W.; Verevkin, A.; Sobolewski, Roman url  openurl
  Title (up) Ultrafast NBN hot-electron single-photon detectors for electronic applications Type Abstract
  Year 2002 Publication Abstracts 8-th IUMRS-ICEM Abbreviated Journal Abstracts 8-th IUMRS-ICEM  
  Volume Issue Pages  
  Keywords NbN SSPD, SNSPD  
  Abstract We present a new, simple to manufacture, single-photon detector (SPD), which can work from ultraviolet to near-infrared wavelengths of optical radiation and combines high speed of operation, high quantum efficiency (QE), and very low dark counts. The devices are superconducting and operate at temperature below 5 K. The physics of operation of our SPD is based on formation of a photon-induced resistive hotspot and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconductor.  
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  Corporate Author Thesis  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference 8th IUMRS International Conference on Electronic Materials  
  Notes Approved no  
  Call Number Serial 1532  
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Author Xu, Y.; Zheng, X.; Williams, C.; Verevkin, A.; Sobolewski, R.; Chulkova, G.; Lipatov, A.; Okunev, O.; Smirnov, K.; Gol’tsman, G. N. url  doi
openurl 
  Title (up) Ultrafast superconducting hot-electron single-photon detector Type Conference Article
  Year 2001 Publication CLEO Abbreviated Journal CLEO  
  Volume Issue Pages 345  
  Keywords NbN SSPD, SNSPD  
  Abstract Summary form only given. The current most-pressing need is to develop a practical, GHz-range counting single-photon detector, operational at either 1.3-/spl mu/m or 1.55-/spl mu/m radiation wavelength, for novel quantum communication and quantum cryptography systems. The presented solution of the problem is to use an ultrafast hot-electron photodetector, based on superconducting thin-film microstructures. This type of device is very promising, due to the macroscopic quantum nature of superconductors. Very fast response time and the small, (meV range) value of the superconducting energy gap characterize the superconductor, leading to the efficient avalanche process even for infrared photons.  
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  ISSN ISBN Medium  
  Area Expedition Conference Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Technical Digest (IEEE Cat. No.01CH37170)  
  Notes Approved no  
  Call Number Serial 1545  
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Author Goltsman, G.; Korneev, A.; Divochiy, A.; Minaeva, O.; Tarkhov, M.; Kaurova, N.; Seleznev, V.; Voronov, B.; Okunev, O.; Antipov, A.; Smirnov, K.; Vachtomin, Yu.; Milostnaya, I.; Chulkova, G. url  doi
openurl 
  Title (up) Ultrafast superconducting single-photon detector Type Journal Article
  Year 2009 Publication J. Modern Opt. Abbreviated Journal J. Modern Opt.  
  Volume 56 Issue 15 Pages 1670-1680  
  Keywords SSPD, SNSPD  
  Abstract The state-of-the-art of the NbN nanowire superconducting single-photon detector technology (SSPD) is presented. The SSPDs exhibit excellent performance at 2 K temperature: 30% quantum efficiency from visible to infrared, negligible dark count rate, single-photon sensitivity up to 5.6 µm. The recent achievements in the development of GHz counting rate devices with photon-number resolving capability is presented.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0950-0340 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number RPLAB @ akorneev @ Serial 607  
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Author Verevkin, A. A.; Pearlman, A.; Slysz, W.; Zhang, J.; Sobolewski, R.; Chulkova, G.; Okunev, O.; Kouminov, P.; Drakinskij, V.; Smirnov, K.; Kaurova, N.; Voronov, B.; Gol’tsman, G.; Currie, M. url  doi
openurl 
  Title (up) Ultrafast superconducting single-photon detectors for infrared wavelength quantum communications Type Conference Article
  Year 2003 Publication Proc. SPIE Abbreviated Journal Proc. SPIE  
  Volume 5105 Issue Pages 160-170  
  Keywords NbN SSPD, SNSPD, applications, single-photon detector, quantum cryptography, quantum communications, superconducting devices  
  Abstract We have developed a new class of superconducting single-photon detectors (SSPDs) for ultrafast counting of infrared (IR) photons for secure quantum communications. The devices are operated on the quantum detection mechanism, based on the photon-induced hotspot formation and subsequent appearance of a transient resistive barrier across an ultrathin and submicron-wide superconducting stripe. The detectors are fabricated from 3.5-nm-thick NbN films and they operate at 4.2 K inside a closed-cycle refrigerator or liquid helium cryostat. Various continuous and pulsed laser sources have been used in our experiments, enabling us to determine the detector experimental quantum efficiency (QE) in the photon-counting mode, response time, time jitter, and dark counts. Our 3.5-nm-thick SSPDs reached QE above 15% for visible light photons and 5% at 1.3 – 1.5 μm infrared range. The measured real-time counting rate was above 2 GHz and was limited by the read-out electronics (intrinsic response time is <30 ps). The measured jitter was <18 ps, and the dark counting rate was <0.01 per second. The measured noise equivalent power (NEP) is 2 x 10-18 W/Hz1/2 at λ = 1.3 μm. In near-infrared range, in terms of the counting rate, jitter, dark counts, and overall sensitivity, the NbN SSPDs significantly outperform their semiconductor counterparts. An ultrafast quantum cryptography communication technology based on SSPDs is proposed and discussed.  
  Address  
  Corporate Author Thesis  
  Publisher SPIE Place of Publication Editor Donkor, E.; Pirich, A.R.; Brandt, H.E.  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference Quantum Information and Computation  
  Notes Approved no  
  Call Number Serial 1514  
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Author Gol'tsman, G. N.; Korneev, A.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Minaeva, O.; Smirnov, K.; Voronov, B.; Słysz, W.; Pearlman, A.; Verevkin, A.; Sobolewski, R. url  doi
openurl 
  Title (up) Ultrafast superconducting single-photon detectors for near-infrared-wavelength quantum communications Type Journal Article
  Year 2005 Publication Phys. Stat. Sol. (C) Abbreviated Journal Phys. Stat. Sol. (C)  
  Volume 2 Issue 5 Pages 1480-1488  
  Keywords NbN SSPD, SNSPD  
  Abstract We present our progress on the research and development of NbN superconducting single‐photon detectors (SSPD's) for ultrafast counting of near‐infrared photons for secure quantum communications. Our SSPD's operate in the quantum detection mode based on the photon‐induced hotspot formation and subsequent development of a transient resistive barrier across an ultrathin and submicron‐width superconducting stripe. The devices are fabricated from 4‐nm‐thick NbN films and kept in the 4.2‐ to 2‐K temperature range. The detector experimental quantum efficiency in the photon‐counting mode reaches above 40% for the visible light and up to 30% in the 1.3‐ to 1.55‐µm wavelength range with dark counts below 0.01 per second. The experimental real‐time counting rate is above 2 GHz and is limited by our readout electronics. The SSPD's timing jitter is below 18 ps, and the best‐measured value of the noise‐equivalent power (NEP) is 5 × 10–21 W/Hz1/2 at 1.3 µm. In terms of quantum efficiency, timing jitter, and maximum counting rate, our NbN SSPD's significantly outperform semiconductor avalanche photodiodes and photomultipliers in the 1.3‐ to 1.55‐µm range.  
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  Corporate Author Thesis  
  Publisher Place of Publication Editor  
  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 1610-1634 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1479  
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