Records |
Author |
Gershenzon, E. M.; Gol'tsman, G.; Ptitsina, N. G. |
Title |
Energy spectrum of free excitons in germanium |
Type |
Journal Article |
Year |
1973 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
18 |
Issue |
3 |
Pages |
93 |
Keywords |
Ge, free excitons, energy spectrum |
Abstract |
|
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1734 |
Permanent link to this record |
|
|
|
Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Kagane, M. L. |
Title |
Energy spectrum of acceptors in germanium and its response to a magnetic field |
Type |
Journal Article |
Year |
1977 |
Publication |
Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
Volume |
45 |
Issue |
4 |
Pages |
769-776 |
Keywords |
p-Ge, photoconductivity, energy spectrum, magnetic field |
Abstract |
We investigated the spectrum of the submillimeter photoconductivity of p-Ge at helium temperatures and the effects of a magnetic field up to 40 kOe on the spectrum. A large number of lines of transitions between the excited states of the acceptors was observed, some of the lines were identified, and the energies of a number of spectral levels B, Al, Ga, In, and TI in Ge were identified. The results are compared with calculations and with experimental data obtained from the spectra of the photoexcitation of the ground state of the impurities. Using one transition as an example, we discuss the splitting of the excited states of acceptors in the magnetic field and under uniaxial compression. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1727 |
Permanent link to this record |
|
|
|
Author |
Florya, I. N.; Korneeva, Y. P.; Sidorova, M. V.; Golikov, A. D.; Gaiduchenko, I. A.; Fedorov, G. E.; Korneev, A. A.; Voronov, B. M.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R. |
Title |
Energy relaxtation and hot spot formation in superconducting single photon detectors SSPDs |
Type |
Conference Article |
Year |
2015 |
Publication |
EPJ Web of Conferences |
Abbreviated Journal |
EPJ Web of Conferences |
Volume |
103 |
Issue |
|
Pages |
10004 (1 to 2) |
Keywords |
SSPD, SNSPD |
Abstract |
We have studied the mechanism of energy relaxation and resistive state formation after absorption of a single photon for different wavelengths and materials of single photon detectors. Our results are in good agreement with the hot spot model. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
2100-014X |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1351 |
Permanent link to this record |
|
|
|
Author |
Smirnov, K. V.; Ptitsina, N. G.; Vakhtomin, Y. B.; Verevkin, A. A.; Gol’tsman, G. N.; Gershenzon, E. M. |
Title |
Energy relaxation of two-dimensional electrons in the quantum Hall effect regime |
Type |
Journal Article |
Year |
2000 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
Volume |
71 |
Issue |
1 |
Pages |
31-34 |
Keywords |
2DEG, GaAs/AlGaAs heterostructures |
Abstract |
The mm-wave spectroscopy with high temporal resolution is used to measure the energy relaxation times τe of 2D electrons in GaAs/AlGaAs heterostructures in magnetic fields B=0–4 T under quasi-equilibrium conditions at T=4.2 K. With increasing B, a considerable increase in τe from 0.9 to 25 ns is observed. For high B and low values of the filling factor ν, the energy relaxation rate τ −1e oscillates. The depth of these oscillations and the positions of maxima depend on the filling factor ν. For ν>5, the relaxation rate τ −1e is maximum when the Fermi level lies in the region of the localized states between the Landau levels. For lower values of ν, the relaxation rate is maximum at half-integer values of τ −1e when the Fermi level is coincident with the Landau level. The characteristic features of the dependence τ −1e (B) are explained by different contributions of the intralevel and interlevel electron-phonon transitions to the process of the energy relaxation of 2D electrons. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0021-3640 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
http://jetpletters.ru/ps/899/article_13838.shtml (“Энергетическая релаксация двумерных электронов в области квантового эффекта Холла”) |
Approved |
no |
Call Number |
|
Serial |
1559 |
Permanent link to this record |
|
|
|
Author |
Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Title |
Electron–phonon interaction in disordered conductors |
Type |
Journal Article |
Year |
1999 |
Publication |
Phys. Rev. B Condens. Matter |
Abbreviated Journal |
Phys. Rev. B Condens. Matter |
Volume |
263-264 |
Issue |
|
Pages |
190-192 |
Keywords |
disordered conductors, electron-phonon interaction |
Abstract |
The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0921-4526 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1765 |
Permanent link to this record |
|
|
|
Author |
Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. |
Title |
Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films |
Type |
Journal Article |
Year |
2015 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
Volume |
25 |
Issue |
3 |
Pages |
1-4 |
Keywords |
TiN MKID |
Abstract |
We have measured the energy relaxation times from the electron bath to the phonon bath in strongly disordered TiN films grown by atomic layer deposition. The measured values of τ eph vary from 12 to 91 ns. Over a temperature range from 3.4 to 1.7 K, they follow T -3 temperature dependence, which are consistent with values of τ eph reported previously for sputtered TiN films. For the most disordered film, with an effective elastic mean free path of 0.35 nm, we find a faster relaxation and a stronger temperature dependence, which may be an additional indication of the influence of strong disorder on a superconductor. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1051-8223 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1296 |
Permanent link to this record |
|
|
|
Author |
Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. |
Title |
Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes |
Type |
Journal Article |
Year |
2015 |
Publication |
Nano Lett. |
Abbreviated Journal |
Nano Lett. |
Volume |
15 |
Issue |
12 |
Pages |
7859-7866 |
Keywords |
carbon nanotubes, CNT, tunable superconductivity, van Hove singularities |
Abstract |
Van Hove singularities (VHSs) are a hallmark of reduced dimensionality, leading to a divergent density of states in one and two dimensions and predictions of new electronic properties when the Fermi energy is close to these divergences. In carbon nanotubes, VHSs mark the onset of new subbands. They are elusive in standard electronic transport characterization measurements because they do not typically appear as notable features and therefore their effect on the nanotube conductance is largely unexplored. Here we report conductance measurements of carbon nanotubes where VHSs are clearly revealed by interference patterns of the electronic wave functions, showing both a sharp increase of quantum capacitance, and a sharp reduction of energy level spacing, consistent with an upsurge of density of states. At VHSs, we also measure an anomalous increase of conductance below a temperature of about 30 K. We argue that this transport feature is consistent with the formation of Cooper pairs in the nanotube. |
Address |
Department of Physics, Georgetown University , Washington, District of Columbia 20057, United States |
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
1530-6984 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
PMID:26506109; Suuplementary info (attached to pdf) DOI: 10.1021/acs.nanolett.5b02564 |
Approved |
no |
Call Number |
|
Serial |
1782 |
Permanent link to this record |
|
|
|
Author |
Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. |
Title |
Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity |
Type |
Conference Article |
Year |
1996 |
Publication |
Czech. J. Phys. |
Abbreviated Journal |
Czech. J. Phys. |
Volume |
46 |
Issue |
S2 |
Pages |
857-858 |
Keywords |
NbC films |
Abstract |
Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
0011-4626 |
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1617 |
Permanent link to this record |
|
|
|
Author |
Karasik, B. S.; Il'in, K. S.; Ptitsina, N. G.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen', E. V.; Krasnosvobodtsev, S. I. |
Title |
Electron-phonon scattering rate in impure NbC films |
Type |
Abstract |
Year |
1998 |
Publication |
NASA/ADS |
Abbreviated Journal |
NASA/ADS |
Volume |
|
Issue |
|
Pages |
Y35.08 |
Keywords |
NbC films |
Abstract |
The study of the electron-phonon interaction in thin (20 nm) NbC films with electron mean free path l=2-13 nm gives an evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference ~T^2-term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5 – 10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence T^n with the exponent n = 2.5-3. This behaviour is well explained by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
American Physical Society, Annual March Meeting, March 16-20, 1998 Los Angeles, CA |
Notes |
|
Approved |
no |
Call Number |
|
Serial |
1591 |
Permanent link to this record |
|
|
|
Author |
Sidorova, M.; Semenov, A.; Korneev, A.; Chulkova, G.; Korneeva, Y.; Mikhailov, M.; Devizenko, A.; Kozorezov, A.; Goltsman, G. |
Title |
Electron-phonon relaxation time in ultrathin tungsten silicon film |
Type |
Miscellaneous |
Year |
2018 |
Publication |
arXiv |
Abbreviated Journal |
|
Volume |
|
Issue |
|
Pages |
|
Keywords |
WSi film |
Abstract |
Using amplitude-modulated absorption of sub-THz radiation (AMAR) method, we studied electron-phonon relaxation in thin disordered films of tungsten silicide. We found a response time ~ 800 ps at critical temperature Tc = 3.4 K, which scales as minus 3 in the temperature range from 1.8 to 3.4 K. We discuss mechanisms, which can result in a strong phonon bottle-neck effect in a few nanometers thick film and yield a substantial difference between the measured time, characterizing response at modulation frequency, and the inelastic electron-phonon relaxation time. We estimate the electron-phonon relaxation time to be in the range ~ 100-200 ps at 3.4 K. |
Address |
|
Corporate Author |
|
Thesis |
|
Publisher |
|
Place of Publication |
|
Editor |
|
Language |
|
Summary Language |
|
Original Title |
|
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
Series Volume |
|
Series Issue |
|
Edition |
|
ISSN |
|
ISBN |
|
Medium |
|
Area |
|
Expedition |
|
Conference |
|
Notes |
Duplicated as 1341 |
Approved |
no |
Call Number |
|
Serial |
1340 |
Permanent link to this record |