| Records |
| Author |
Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. |
Title  |
Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films |
Type |
Journal Article |
| Year |
1991 |
Publication |
IEEE Trans. Magn. |
Abbreviated Journal |
IEEE Trans. Magn. |
| Volume |
27 |
Issue |
2 |
Pages |
1317-1320 |
| Keywords |
YBCO, HTS, Nb HEB mixers |
| Abstract |
A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively. |
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1941-0069 |
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1681 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
| Title |
Electron energy relaxation in disordered superconducting NbN films |
Type |
Journal Article |
| Year |
2020 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
102 |
Issue |
5 |
Pages |
054501 (1 to 15) |
| Keywords |
NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
| Abstract |
We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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2469-9950 |
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1266 |
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Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
| Title |
Electron heating in metallic resistors at sub-Kelvin temperature |
Type |
Journal Article |
| Year |
2007 |
Publication |
Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
| Volume |
76 |
Issue |
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Pages |
165426(1-9) |
| Keywords |
electron heating in resistor, HEB distributed model, HEB model, hot electrons |
| Abstract |
In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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936 |
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| Author |
Klapwijk, T. M.; Semenov, A. V. |
| Title |
Engineering physics of superconducting hot-electron bolometer mixers |
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Journal Article |
| Year |
2017 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
| Volume |
7 |
Issue |
6 |
Pages |
627-648 |
| Keywords |
HEB mixers |
| Abstract |
Superconducting hot-electron bolometers are presently the best performing mixing devices for the frequency range beyond 1.2 THz, where good-quality superconductor-insulator-superconductor devices do not exist. Their physical appearance is very simple: an antenna consisting of a normal metal, sometimes a normal-metal-superconductor bilayer, connected to a thin film of a narrow short superconductor with a high resistivity in the normal state. The device is brought into an optimal operating regime by applying a dc current and a certain amount of local-oscillator power. Despite this technological simplicity, its operation has found to be controlled by many different aspects of superconductivity, all occurring simultaneously. A core ingredient is the understanding that there are two sources of resistance in a superconductor: a charge-conversion resistance occurring at a normal-metal-superconductor interface and a resistance due to time-dependent changes of the superconducting phase. The latter is responsible for the actual mixing process in a nonuniform superconducting environment set up by the bias conditions and the geometry. The present understanding indicates that further improvement needs to be found in the use of other materials with a faster energy relaxation rate. Meanwhile, several empirical parameters have become physically meaningful indicators of the devices, which will facilitate the technological developments. |
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2156-342X |
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1292 |
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Vystavkin, A. N. |
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Estimation of noise equivalent power and design analysis of an andreev reflection hot-electron microbolometer for submillimeter radioastronomy |
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Journal Article |
| Year |
1999 |
Publication |
Rus. J. Radio Electron. |
Abbreviated Journal |
Rus. J. Radio Electron. |
| Volume |
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Issue |
10 |
Pages |
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| Keywords |
HEB, detector, bolometer |
| Abstract |
Results of theoretical estimations and measurements of characteristics of an Andreev reflection hot-electron microbolometer for submillimeter radioastronomy made by different researchers are reviewed and analysed. Peculiarities and characteristics of the microbolometers using two types of microthermometer for measurement of the electron temperature increment under influence of the radiation: the SIN-junction and the transition-edge sensor (TES) with electrothermal feedback – are compared. Advantages of the microbolometer with the second type of the microthermometer when the TES is used simultaneously as the absorber of radiation are shown. Methods of achievement of the best noise equivalent power of the microbolometer in such version as well as methods of the matching the microbolometer with the incident radiation flow using planar antennas and with the channel of output signal measurement using a SQUID-picoammeter are considered. |
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496 |
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