Author |
Title |
Year |
Publication |
Volume |
Pages |
Voevodin, E. I.; Gershenzon, E. M.; Goltsman, G. N.; Ptitsina, N. G.; Chulkova, G. M. |
Capture of free holes by charged acceptors in uniaxially deformed Ge |
1988 |
Fizika i Tekhnika Poluprovodnikov |
22 |
540-543 |
Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
Capture of photoexcited carriers by shallow impurity centers in germanium |
1979 |
Sov. Phys. JETP |
50 |
728-734 |
Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. |
Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors |
2018 |
Phys. Status Solidi B |
255 |
1700227 (1 to 6) |
Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
25 |
539-543 |
Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
Character of submillimeter photoconductivity in n-lnSb |
1979 |
Sov. Phys. JETP |
49 |
121-128 |