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Ptitsina, N. G., Chulkova, G. M., & Gershenzon, E. M. (1995). Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films. JETP, 80(5), 960–964.
Abstract: The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation.
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Gol'tsman, G. N., Goghidze, I. G., Kouminov, P. B., Karasik, B. S., Semenov, A. D., & Gershenzon, E. M. (1994). Influence of grain boundary weak links on the nonequilibrium response of YBaCuO thin films to short laser pulses. J. Supercond., 7(4), 751–755.
Abstract: The transient voltage response in both epitaxial and granular YBaCuO thin films to 80 ps pulses of YAG∶Nd laser radiation of wavelength 0.63 and 1.54 μm was studied. In the normal and resistive states both types of films demonstrate two components: a nonequilibrium picosecond component and a bolometric nanosecond one. The normalized amplitudes are almost the same for all films. In the superconducting state we observed a kinetic inductive response and two-component shape after integration. The normalized amplitude of the response in granular films is up to five orders of magnitude larger than in epitaxial films. We interpret the nonequilibrium response in terms of a suppression of the order parameter by the excess of quasiparticles followed by the change of resistance in the normal and resistive states or kinetic inductance in the superconducting state. The sharp rise of inductive response in granular films is explained both by a diminishing of the cross section for current percolation through the disordered network of Josephson weak links and by a decrease of condensate density in neighboring regions.
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Gerecht, E., Musante, C. F., Jian, H., Zhuang, Y., Yngvesson, K. S., Dickinson, J., et al. (1999). Improved characteristics of NbN HEB mixers integrated with log-periodic antennas. In Proc. 10th Int. Symp. Space Terahertz Technol. (pp. 200–207).
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Gershenzon, E. M., & Gol'tsman, G. N. (1993). Hot-electron superconducting mixers. In J. R. Birch, & T. J. Parker (Eds.), Proc. SPIE (Vol. 2104, pp. 329–330). SPIE.
Abstract: The creation of low noise heterodyne receivers for frequencies above 1 THz is in the urgentneed for radio astronomy, laser spectroscopy, plasma diagnostic, etc. In this paper we discussthe nonlinear effect related to hot electrons in superconductors, and their potential use in lownoise submilimeter wave mixer. We also discuss results achieved so far as well as possible futuredevelopments.
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Gershenzon, E. M., & Gol'tsman, G. N. (1993). Hot electron superconductive mixers. In Proc. 4th Int. Symp. Space Terahertz Technol. (pp. 618–622).
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Karasik, B. S., Gol'tsman, G. N., Voronov, B. M., Svechnikov, S. I., Gershenzon, E. M., Ekstrom, H., et al. (1995). Hot electron quasioptical NbN superconducting mixer. IEEE Trans. Appl. Supercond., 5(2), 2232–2235.
Abstract: Hot electron superconductor mixer devices made of thin NbN films on SiO/sub 2/-Si/sub 3/N/sub 4/-Si membrane have been fabricated for 300-350 GHz operation. The device consists of 5-10 parallel strips each 5 /spl mu/m long by 1 /spl mu/m wide which are coupled to a tapered slot-line antenna. The I-V characteristics and position of optimum bias point were studied in the temperature range 4.5-8 K. The performance of the mixer at higher temperatures is closer to that predicted by theory for uniform electron heating. The intermediate frequency bandwidth versus bias has also been investigated. At the operating temperature 4.2 K a bandwidth as wide as 0.8 GHz has been measured for a mixer made of 6 nm thick film. The bandwidth tends to increase with operating temperature. The performance of the NbN mixer is expected to be better for higher frequencies where the absorption of radiation should be more uniform.
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Gerecht, E., Musante, C. F., Schuch, R., Lutz, C. R., Jr., Yngvesson, K. S., et al. (1995). Hot electron detection and mixing experiments in NbN at 119 micrometer wavelength. In Proc. 6th Int. Symp. Space Terahertz Technol. (pp. 284–293).
Abstract: We have performed preliminary experiments with the goal of demonstrating a Hot Electron Bolometric (HEB) mixer for a 119 micrometer wavelength (2.5 THz). We have chosen a NbN device of size 700 x 350 micrometers. This device can easily be coupled to a laser LO source, which is advantageous for performing a prototype experiment. The relatively large size of the device means that the LO power required is in the mW range; this power can be easily obtained from a THz laser source. We have measured the amount of laser power actually absorbed in the device, and from this have estimated the best optical coupling loss to be about 10 di . We are developing methods for improving the optical coupling further. Preliminary measurements of the response of the device to a chopped black-body have not yet resulted in a measured receiver noise temperature. We expect to be able to complete this measurement in the near future.
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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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Gol’tsman, G. N., & Gershenzon, E. M. (1993). High speed hot-electron superconducting bolometer. In J. R. Birch, & T. J. Parker (Eds.), Proc. SPIE (Vol. 2104, pp. 181–182). SPIE.
Abstract: Physical limitation of response time of a superconducting bolometer as well as the nature of non-equilibrium detection of radiation have been investigated for Al, Nb and NbN thin films in spectral range from submillimeter to near-infraredwavelengths [1,2]. In the case of ideal heat removal from the film with the f_‘. 100A thickness the detection mechanism is an electron heating effect that is not selective to radiation wavelength in a very broad range. The response time ofan electron heating bolometer is determined by an electron-phonon interaction time. This time is of about 10 ns, 0.5 ns and 20 ps for Al, Nb, and NbN correspondingly near the critical temperature of the superconducting film. Thesensitive area of the bolometer consists of a number of narrow strips (with awidth of 1µm) connected in parallel to contact pads; these pads together witha sapphire substrate and a ground plate represent the microstrip transmissionline with an impedance of 50 Q.
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Karasik, B. S., Milostnaya, I. I., Zorin, M. A., Elantev, A. I., Gol'tsman, G. N., & Gershenzon, E. M. (1995). High speed current switching of homogeneous YBaCuO film between superconducting and resistive states. IEEE Trans. Appl. Supercond., 5(2), 3042–3045.
Abstract: Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
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