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Author Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. url  openurl
  Title (up) Intense electromagnetic radiation heating of superconductor electrons in resistive state Type Journal Article
  Year 1988 Publication Fizika Nizkikh Temperatur Abbreviated Journal Fizika Nizkikh Temperatur  
  Volume 14 Issue 7 Pages 753-763  
  Keywords Nb HEB  
  Abstract An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model.  
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  Notes Approved no  
  Call Number Serial 1697  
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Author Aksaev, E. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. url  openurl
  Title (up) Interaction of electrons with thermal phonons in YBa2Cu3O7-δ films at low temperatures Type Journal Article
  Year 1989 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 50 Issue 5 Pages 283-286  
  Keywords YBCO HTS films  
  Abstract The time of electron-phonon interaction tau(eph) in YBaCuO films at low temperatures is studied. This is measured as the time of resistance relaxation in the resistive state of the superconducter, and is also determined from the increase in resistance under the action of radiation. Consistent results of these methods show that resistance relaxation in the resistive state is caused by cooling of the electron subsystem with respect to the phonon subsystem. The time tau(eph) is found to be inversely proportional to the temperature and comes to 80 ps when T = 1.6 K and 5 ps when T = 30 K. 6 refs.  
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  Notes Approved no  
  Call Number Serial 1690  
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Author Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. url  doi
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  Title (up) Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films Type Journal Article
  Year 1998 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B  
  Volume 57 Issue 24 Pages 15623-15628  
  Keywords NbC films  
  Abstract A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.  
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  ISSN 0163-1829 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1585  
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Author Gershenzon, E. M.; Orlova, S. L.; Orlov, L. A.; Ptitsina, N. G.; Rabinovich, R. I. url  openurl
  Title (up) Intervalley cyclotron-impurity resonance of electrons in n-Ge Type Journal Article
  Year 1976 Publication JETP Lett. Abbreviated Journal JETP Lett.  
  Volume 24 Issue 3 Pages 125-128  
  Keywords n-Ge, cyclotron-impurity resonance  
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  Notes Approved no  
  Call Number Serial 1730  
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Author Gershenzon, E. M.; Goltsman, G. N.; Ptitsyna, N. G. url  openurl
  Title (up) Investigation of excited donor states in GaAs Type Journal Article
  Year 1974 Publication Sov. Phys. Semicond. Abbreviated Journal Sov. Phys. Semicond.  
  Volume 7 Issue 10 Pages 1248-1250  
  Keywords GaAs, excited donor states  
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  Publisher Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa Place of Publication Editor  
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  Area Expedition Conference  
  Notes Approved no  
  Call Number Serial 1733  
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