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Author Korneev, A.; Divochiy, A.; Tarkhov, M.; Minaeva, O.; Seleznev, V.; Kaurova, N.; Voronov, B.; Okunev, O.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Gol'tsman, G.
Title (down) New advanced generation of superconducting NbN-nanowire single-photon detectors capable of photon number resolving Type Conference Article
Year 2008 Publication J. Phys.: Conf. Ser. Abbreviated Journal J. Phys.: Conf. Ser.
Volume 97 Issue Pages 012307 (1 to 6)
Keywords PNR SSPD; SNSPD
Abstract We present our latest generation of ultrafast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). We have developed, fabricated and tested a multi-sectional design of NbN nanowire structures. The novel SSPD structures consist of several meander sections connected in parallel, each having a resistor connected in series. The novel SSPDs combine 10 μm × 10 μm active areas with a low kinetic inductance and PNR capability. That resulted in a significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector's response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performances of the PNR SSPDs. The PNR SSPDs are perfectly suited for fibreless free-space telecommunications, as well as for ultrafast quantum cryptography and quantum computing.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1742-6596 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1245
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Author Smirnov, K.; Divochiy, A.; Vakhtomin, Y.; Morozov, P.; Zolotov, P.; Antipov, A.; Seleznev, V.
Title (down) NbN single-photon detectors with saturated dependence of quantum efficiency Type Journal Article
Year 2018 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 31 Issue 3 Pages 035011 (1 to 8)
Keywords NbN SSPD, SNSPD
Abstract The possibility of creating NbN superconducting single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current was investigated. It was shown that the saturation increases for the detectors based on finer films with a lower value of Rs300/Rs20. The decreasing of Rs300/Rs20 was related to the increasing influence of quantum corrections to conductivity of superconductors and, in turn, to the decrease of the electron diffusion coefficient. The best samples have a constant value of system QE 94% at Ib/Ic ~ 0.8 and wavelength 1310 nm.
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Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0953-2048 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1232
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Author Gol'tsman, Gregory N.; Vachtomin, Yuriy B.; Antipov, Sergey V.; Finkel, Matvey I.; Maslennikov, Sergey N.; Smirnov, Konstantin V.; Polyakov, Stanislav L.; Svechnikov, Sergey I.; Kaurova, Natalia S.; Grishina, Elisaveta V.; Voronov, Boris M.
Title (down) NbN phonon-cooled hot-electron bolometer mixer for terahertz heterodyne receivers Type Conference Article
Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 5727 Issue Pages 95-106
Keywords NbN HEB mixers
Abstract We present the results of our studies of NbN phonon-cooled HEB mixers at terahertz frequencies. The mixers were fabricated from NbN film deposited on a high-resistivity Si substrate with an MgO buffer layer. The mixer element was integrated with a log-periodic spiral antenna. The noise temperature measurements were performed at 2.5 THz and at 3.8 THz local oscillator frequencies for the 3 x 0.2 μm2 active area devices. The best uncorrected receiver noise temperatures found for these frequencies are 1300 K and 3100 K, respectively. A water vapour discharge laser was used as the LO source. The largest gain bandwidth of 5.2 GHz was achieved for a mixer based on 2 nm thick NbN film deposited on MgO layer over Si substrate. The gain bandwidth of the mixer based on 3.5 nm NbN film deposited on Si with MgO is 4.2 GHz and the noise bandwidth for the same device amounts to 5 GHz. We also present the results of our research into decrease of the direct detection contribution to the measured Y-factor and a possible error of noise temperature calculation. The use of a square nickel cell mesh as an IR-filter enabled us to avoid the effect of direct detection and measure apparent value of the noise temperature which was 16% less than that obtained using conventional black polyethylene IR-filter.
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Area Expedition Conference Terahertz and Gigahertz Electronics and Photonics IV
Notes Approved no
Call Number Serial 378
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Author Maslennikov, S.; Vachtomin, Yu.; Antipov, S.; Smirnov, K.; Kaurova, N.; Grishina, E.; Voronov, B.; Gol'tsman, G.
Title (down) NbN HEB mixers for frequencies of 2.5 and 3.8 THz Type Conference Article
Year 2004 Publication Proc. Tenth All-Russian sceintific conference of student-physicists and young sceintists (VNKSF-10) Abbreviated Journal
Volume Issue Pages
Keywords
Abstract
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Corporate Author Thesis
Publisher Place of Publication Moscow Editor
Language Summary Language Original Title
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Notes Approved no
Call Number RPLAB @ s @ qoheb_vnksf10_2004 Serial 349
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Author Maslennikov, S.; Antipov, S.; Shishkov, A.; Svechnikov, S.; Voronov, B.; Smirnov, K.; Kaurova, N.; Drakinski, V.; Gol'tsman, G.
Title (down) NbN HEB mixer noise temperature measurements with hot/cold load mounted inside the helium cryostat at 300 GHz Type Conference Article
Year 2002 Publication Proc. Int. Student Seminar on Microwave Appl. of Novel Physical Phenomena supported by IEEE Abbreviated Journal
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Publisher LETI Place of Publication St.-Petersburg Editor
Language Summary Language Original Title
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Area Expedition Conference
Notes Approved no
Call Number Serial 324
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