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Author Гольцман, Г. Н.; Веревкин, А. А.; Гершензон, Е. М.; Птицина, Н. Г.; Смирнов, К. В.; Чулкова, Г. М.
Title (down) Исследования процессов неупругой релаксации и примесная спектроскопия-релаксометрия в двумерном электронном газе в полупроводниковых структурах с квантовыми ямами Type Report
Year 1995 Publication Abbreviated Journal
Volume Issue Pages
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Abstract В гетероструктурах GaAs/AlGaAs впервые прямым методом измерена температурная зависимость вpемени энеpгетической pелаксации двумерного электронного газа te(T) в широком диапазоне температур Т=1,5 – 50 К в квазиравновесных условиях. Для измерений использовался высокочувствительный спектрометр миллиметрового диапазона волн с высоким временным разрешением, который позволял измерять релаксационные времена до 150 пс с погрешностью не более 20%. Верхний предел температуры определялся временным разрешением спектрометра. Исследования проводились на высококачественных образцах с поверхностной концентрацией носителей ns = 4,2 1011 см-2 и подвижностью m = 7 105 см2В-1с-1 (при Т = 4,2К). В квазиравновесных условиях из температурной зависимости tе определен предел подвижности при низких температурах (T<4.2 K), связанный с рассеянием на пьезоакустическом потенциале, получено время неупругой релаксации, связанное с рассеянием на деформационном потенциале (15 K25 K), получено характерное время испускания оптического фонона (tLO>4,5пс), которое существенно превышает время сронтанного излучения оптического фонона (примерно в 30 раз), что связано с большой ролью процессов перепоглащения фононов электронами.При низких температурах проведены измерения tе в условиях сильного разогрева. Полученные значения tе и зависимость tе от температуры электронов Те совпадают с tе(Т) в квазиравновесных условиях при Т=Те. Из полученных значений tе(Те) построена зависимость мощности энергетических потерь от Те, которая хорошо согласуется с литературными данными.Начаты измерения в магнитном поле, которые показывают переспективность использованного нами метода измерений как в области слабых магнитных полей при факторе заполнения >10, так и в области сильных магнитных полей при факторе заполнения >1-2.
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Notes Отчет о НИР/НИОКР; РФФИ: 95-02-06409-а; Approved no
Call Number Serial 1831
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Author Parvitte, B.; Thomas, X.; Courtois, D.
Title (down) Wide band (2.5 GHz) infrared heterodyne spectrometer Type Journal Article
Year 1995 Publication Int. J. Infrared and Millimeter Waves Abbreviated Journal
Volume 16 Issue 9 Pages 1533-1540
Keywords HgCdTe detector mixer
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ISSN 0195-9271 ISBN Medium
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Notes Approved no
Call Number Serial 470
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Author Hesler, J. L.; Crowe, T. W.; Bradley, R. F.; Pan, S. K.; Chattopadhyay, G.
Title (down) The design, construction and evaluation of a 585 GHz planar Schottky mixer Type Conference Article
Year 1995 Publication Proc. 6th Int. Symp. Space Terahertz Technol. Abbreviated Journal
Volume Issue Pages 34-43
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Abstract
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Corporate Author Thesis
Publisher Place of Publication Pasadena, Ca Editor
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Notes Approved no
Call Number Serial 259
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Author de Lange, G.; Kuipers, J. J.; Klapwijk, T. M.; Panhuyzen, R. A.; van de Stadt, H.; de Graauw, M. W. M.
Title (down) Superconducting resonator circuits at frequencies above the gap frequency Type Journal Article
Year 1995 Publication J. Appl. Phys. Abbreviated Journal
Volume 77 Issue 4 Pages 1795-1804
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Notes Approved no
Call Number Serial 257
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Author Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M.
Title (down) Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse Type Journal Article
Year 1995 Publication J. Appl. Phys. Abbreviated Journal J. Appl. Phys.
Volume 77 Issue 8 Pages 4064-4070
Keywords YBCO HTS switches
Abstract A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated.
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ISSN 0021-8979 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1623
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Author Kerr, A. R.
Title (down) Some fundamental and practical limits on broadband matching tocapacitive devices, and the implications for SIS mixer design Type Journal Article
Year 1995 Publication IEEE Trans. Microw. Theory Techn. Abbreviated Journal
Volume 43 Issue 1 Pages 2-13
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Notes Approved no
Call Number Serial 256
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Author Okunev, 0.; Dzardranov, A.; Gol'tsman, G.; Gershenzon, E.
Title (down) Performances of hot—electron superconducting mixer for frequencies less than the gap energy: NbN mixer for 100 GHz operation Type Conference Article
Year 1995 Publication Proc. 6th Int. Symp. Space Terahertz Technol. Abbreviated Journal Proc. 6th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 247-253
Keywords NbN HEB mixers
Abstract The possibilities to improve the parameters of the 100 GHz NbN HEB superconducting waveguide mixers have been studied. The device consists of a signal strip 1 gm wide by 2 Am long made of 40 A thick NbN film. The best operation point was found at 5 K, where the mixer bandwidth made up 1.5-2 GHz and the total loss diminished down to 8 dB. The critical current density has been increased up to " 40 6 A/cm 2 , the noise temperature of the receiver (DSB) has reduced down to 450 K and the local oscillator power has decreased down to -.4).1 mcV.
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Notes Approved no
Call Number Serial 1625
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Author Zorin, M.; Gol'tsman, G.N.; Karasik, B.S.; Elantev, A.I.; Gershenzon, E.M.; Lindgren, M.; Danerud, M.; Winkler, D.
Title (down) Optical mixing in thin YBa2Cu3O7-x films Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages 2431-2434
Keywords YBCO HTS HEB mixers
Abstract High quality, j/sub c/ (77 K)>10/sup 6/ A/cm/sup 2/, epitaxial YBa2Cu3O7-x films of 50 nm thickness were patterned into ten parallel 1 /spl mu/m wide strips. The film structure was coupled to a single-mode fiber. Mixer response was obtained at 0.78 /spl mu/m using laser frequency modulation and an optical delay line. Using two semiconductor lasers at 1.55 /spl mu/m wavelength the beating signal was used to measure the photoresponse up to 18 GHz. Nonequilibrium photoresponse in the resistive state of the superconductor was observed. Bolometric response dominates up to 3 GHz, after which the nonequilibrium response is constant up to the frequency limit of our registration system. Using an electron heating model the influence of different thermal processes on the conversion loss has been analyzed. Ways of increasing the sensitivity are also discussed.
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 1619
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Author Gol'tsman, G.; Kouminov, P.; Goghidze, I.; Gershenzon, E.
Title (down) Nonequilibrium kinetic inductive response of YBCO thin films to low power laser pulses Type Journal Article
Year 1995 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal IEEE Trans. Appl. Supercond.
Volume 5 Issue 2 Pages 2591-2594
Keywords YBCO HTS KID
Abstract We have discovered a transient nonequilibrium kinetic inductive voltage response of YBCO thin films to 20 ps pulses of YAG:Nd laser radiation with 0.63 /spl mu/m and 1.54 /spl mu/m wavelength. By increasing the sensitivity of the read-out system with 100 ps resolution time and diminishing the light intensity (fluence 0.1-2 /spl mu/J/cm/sup 2/) and transport current (density /spl les/10/sup 5/ A/cm/sup 2/) we were able to observe a peculiar bipolar signal form with nearly equal amplitudes for each sign. The integration of the kinetic inductive response over time gives the result which is qualitatively, of the same form as the response in the resistive and normal states: the nonequilibrium picosecond scale component is followed by the bolometric nanosecond component. The nonequilibrium response is interpreted as suppression of the order parameter by excess quasiparticles followed by a change both in resistance (for the resistive state) and in kinetic inductance (for the superconducting state).
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ISSN 1051-8223 ISBN Medium
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Notes Approved no
Call Number Serial 1621
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Author Zorin, M.; Lindgren, M.; Danerud, M.; Karasik, B.; Winkler, D.; Gol'tsman, G.; Gershenzon, E.
Title (down) Nonequilibrium and bolometric responses of YBaCuO thin films to high-frequency modulated laser radiation Type Journal Article
Year 1995 Publication J. Supercond. Abbreviated Journal J. Supercond.
Volume 8 Issue 1 Pages 11-15
Keywords YBCO HTS HEB
Abstract Picosecond nonequilibrium and slow bolometric responses to infrared radiation from a patterned high-T c superconducting (HTS) film in resistive and normal states deposited onto LaAlO3, NdGaO3, and MgO substrates were investigated using both pulse and modulation techniques. The response time of 35 ps to a laser pulse of 17 ps FWHM has been observed. The intrinsic response time of the fast process is expected to be about a few picoseconds. The modulation technique, being free from the disadvantages of pulse methods (poor sensitivity, limited dynamic range), makes the detailed study of a number of relaxation processes possible. Besides the nonequilibrium response, two kinds of bolometric processes, namely phonon transport through the film-substrate interface and phonon thermal diffusion in a substrate, manifest themselves in certain frequency dependences.
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ISSN 0896-1107 ISBN Medium
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Notes Approved no
Call Number Serial 1630
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