| Records |
| Author |
Sprengers, J.P.; Gaggero, A.; Sahin, D.; Nejad, S. Jahanmiri; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore, A. |
Title  |
Waveguide single-photon detectors for integrated quantum photonic circuits |
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Journal Article |
| Year |
2011 |
Publication |
arXiv |
Abbreviated Journal |
arXiv |
| Volume |
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Pages |
11 |
| Keywords |
SPD |
| Abstract |
he generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical circuits and single-photon detectors enables quantum repeaters and qubit amplifiers, and also forms the basis of all-optical quantum gates and of linear-optics quantum computing. However, the monolithic integration of sources, waveguides and detectors on the same chip, as needed for scaling to meaningful number of qubits, is very challenging, and previous work on quantum photonic circuits has used external sources and detectors. Here we propose an approach to a fully-integrated quantum photonic circuit on a semiconductor chip, and demonstrate a key component of such circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (20%) at telecom wavelengths, high timing accuracy (60 ps), response time in the ns range, and are fully compatible with the integration of single-photon sources, passive networks and modulators. |
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arXiv:1108.5107 |
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RPLAB @ gujma @ |
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668 |
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| Author |
Sprengers, J.P.; Gaggero, A.; Sahin, D.; Nejad, S. Jahanmiri; Mattioli, F.; Leoni, R.; Beetz, J.; Lermer, M.; Kamp, M.; Höfling, S.; Sanjines, R.; Fiore A. |
| Title |
Waveguide single-photon detectors for integrated quantum photonic circuits |
Type |
Conference Article |
| Year |
2011 |
Publication |
arXiv |
Abbreviated Journal |
arXiv |
| Volume |
1108.5107 |
Issue |
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Pages |
1-11 |
| Keywords |
optical waveguides, waveguide SSPD |
| Abstract |
The generation, manipulation and detection of quantum bits (qubits) encoded on single photons is at the heart of quantum communication and optical quantum information processing. The combination of single-photon sources, passive optical circuits and single-photon detectors enables quantum repeaters and qubit amplifiers, and also forms the basis of all-optical quantum gates and of linear-optics quantum computing. However, the monolithic integration of sources, waveguides and detectors on the same chip, as needed for scaling to meaningful number of qubits, is very challenging, and previous work on quantum photonic circuits has used external sources and detectors. Here we propose an approach to a fully-integrated quantum photonic circuit on a semiconductor chip, and demonstrate a key component of such circuit, a waveguide single-photon detector. Our detectors, based on superconducting nanowires on GaAs ridge waveguides, provide high efficiency (20%) at telecom wavelengths, high timing accuracy (60 ps), response time in the ns range, and are fully compatible with the integration of single-photon sources, passive networks and modulators. |
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846 |
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Baeva, E. M.; Titova, N. A.; Veyrat, L.; Sacépé, B.; Semenov, A. V.; Goltsman, G. N.; Kardakova, A. I.; Khrapai, V. S. |
| Title |
Thermal relaxation in metal films bottlenecked by diffuson lattice excitations of amorphous substrates |
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Miscellaneous |
| Year |
2021 |
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arXiv |
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arXiv |
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metal films, NbN, InOx, Au/Ni, thermal relaxation |
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Here we examine the role of the amorphous insulating substrate in the thermal relaxation in thin NbN, InOx, and Au/Ni films at temperatures above 5 K. The studied samples are made up of metal bridges on an amorphous insulating layer lying on or suspended above a crystalline substrate. Noise thermometry was used to measure the electron temperature Te of the films as a function of Joule power per unit of area P2D. In all samples, we observe the dependence P2D∝Tne with the exponent n≃2, which is inconsistent with both electron-phonon coupling and Kapitza thermal resistance. In suspended samples, the functional dependence of P2D(Te) on the length of the amorphous insulating layer is consistent with the linear T-dependence of the thermal conductivity, which is related to lattice excitations (diffusons) for the phonon mean free path smaller than the dominant phonon wavelength. Our findings are important for understanding the operation of devices embedded in amorphous dielectrics. |
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1163 |
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Engel, Andreas; Aeschbacher, Adrian; Inderbitzin, Kevin; Schilling, Andreas; Il'in, Konstantin; Hofherr, Matthias; Siegel, Michael; Semenov, Alexei; Hübers, Heinz-Wilhelm |
| Title |
Tantalum nitride superconducting single-photon detectors with low cut-off energy |
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Journal Article |
| Year |
2011 |
Publication |
arXiv |
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arXiv |
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Pages |
9 |
| Keywords |
SSPD |
| Abstract |
Materials with a small superconducting energy gap favor a high detection efficiency of low-energy photons in superconducting nanowire single-photon detectors. We developed a TaN detector with smaller gap and lower density of states at the Fermi energy than in comparable NbN devices, while other relevant parameters remain essentially unchanged. This results in a reduction of the minimum photon energy required for direct detection to $\approx1/3$ as compared to NbN. |
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arXiv:1110.4576 |
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RPLAB @ gujma @ |
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687 |
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Saveskul, N. A.; Titova, N. A.; Baeva, E. M.; Semenov, A. V.; Lubenchenko, A. V.; Saha, S.; Reddy, H.; Bogdanov, S. I.; Marinero, E. E.; Shalaev, V. M.; Boltasseva, A.; Khrapai, V. S.; Kardakova, A. I.; Goltsman, G. N. |
| Title |
Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder |
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Miscellaneous |
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2019 |
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arXiv |
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arXiv |
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1-10 |
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We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for d≤20nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of ∼1012cm−2. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films. |
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1278 |
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