Gousev, Y. P., Semenov, A. D., Gol'tsman, G. N., Sergeev, A. V., & Gershenzon, E. M. (1994). Electron-phonon interaction in disordered NbN films. Phys. B Condens. Mat., 194-196, 1355–1356.
Abstract: Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films.
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Ptitsina, N. G., Chulkova, G. M., Il’in, K. S., Sergeev, A. V., Pochinkov, F. S., Gershenzon, E. M., et al. (1997). Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate. Phys. Rev. B, 56(16), 10089–10096.
Abstract: The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Verevkin, A. I., Ptitsina, N. G., Chulkova, G. M., Gol'tsman, G. N., Gershenzon, E. M., & Yngvesson, K. S. (1995). Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures. JETP Lett., 61(7), 591–595.
Abstract: The energy relaxation time of 2D electrons, Te, has been measured under quasiequilibrium conditions in AlGaAs—GaAs heterojunctions over the temperature range T= 1.5—20 K. At T> 4 K, Te depends only weakly on the temperature, while at T< 4 K 7;'(T) there is a dependence fr; lNT. A linear dependence 7: 1 (T) in the Bloch—-Grfineisen temperature region (T< 5 K) is unambiguous evidence that a piezoacoustic mechanism of an electron—phonon interaction is predominant in the inelastic scattering of electrons. The values of T6 in this temperature range agree very accurately with theoretical results reported by Karpus [Sov. Phys. Semicond. 22 (1988)]. At higher temperatures, where scat—tering by deformation acoustic phonons becomes substantial, there is a significant discrepancy between the experimental and theoretical re-sults.
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Gershenzon, E. M., Gol’tsman, G. N., Gousev, Y. P., Elant’ev, A. I., & Semenov, A. D. (1991). Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films. IEEE Trans. Magn., 27(2), 1317–1320.
Abstract: A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively.
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Chulcova, G. M., Ptitsina, N. G., Gershenzon, E. M., Gershenzon, M. E., & Sergeev, A. V. (1996). Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films. In Czech J. Phys. (Vol. 46, pp. 2489–2490).
Abstract: The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
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