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Author Title (down) Year Publication Volume Pages
Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. Relaxation of the resistive superconducting state in boron-doped diamond films 2016 Phys. Rev. B 93 064506
Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A. Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ 1999 IEEE Trans. Appl. Supercond. 9 3216-3219
Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P. Noise equivalent temperature difference of a superconducting integrated terahertz receiver 2009 J. Commun. Technol. Electron. 54 716-720
Shitov, S. V.; Inatani, J.; Shan, W.-L.; Takeda, M; Wang, Z.; Uvarov, A. V.; Ermakov, A. B.; Uzawa, Y. Measurement of emissivity of the ALMA antenna panel at 840 GHz using NbN-based heterodyne SIS receiver 2008 Proc. 19th Int. Symp. Space Terahertz Technol. 263-266
Emelianov, A. V.; Nekrasov, N. P.; Moskotin, M. V.; Fedorov, G. E.; Otero, N.; Romero, P. M.; Nevolin, V. K.; Afinogenov, B. I.; Nasibulin, A. G.; Bobrinetskiy, I. I. Individual SWCNT transistor with photosensitive planar junction induced by two‐photon oxidation 2021 Adv. Electron. Mater. 7 2000872