Abstract: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.

Abstract: Plasmons, collective oscillations of electron systems, can couple light and electric current, and thus can be used to create compact photodetectors, radiation mixers, and spectrometers. Despite the effort, it has proven challenging to implement plasmonic devices operating at THz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. In this talk, we will demonstrate plasmon-assisted resonant detection of THz radiation by antenna-coupled graphene FETs that act as both rectifying elements and plasmonic Fabry-Perot cavities amplifying the photoresponse. We will show that by varying the plasmon velocity using gate voltage, our detectors can be tuned between multiple resonant modes, a functionality that we apply to measure plasmons' wavelength and lifetime in graphene as well as to probe collective modes in its moire minibands. Our approach offers a convenient tool for further plasmonic research that is often difficult under non-ambient conditions and promises a viable route for various THz applications. We acknowledge Leverhulme Trust, Russian Science Foundation Grants N18-72-00234 and 17-72-30036, Russian Foundation for Basic Research No. 18-57-06001 and 16-29-03402.

Abstract: Single-photon detectors (SPDs) are the foundation of all quantum communications (QC) protocols. Among different classes of SPDs currently studied, NbN superconducting SPDs (SSPDs) are established as the best devices for ultrafast counting of single photons in the infrared (IR) wavelength range. The SSPDs are nanostructured, 100 /spl mu/m/sup 2/ in total area, superconducting meanders, patterned by electron lithography in ultra-thin NbN films. Their operation has been explained within a phenomenological hot-electron photoresponse model. We present the design and performance of a novel, two-channel SPD receiver, based on two fiber-coupled NbN SSPDs. The receivers have been developed for fiber-based QC systems, operational at 1.3 /spl mu/m and 1.55 /spl mu/m telecommunication wavelengths. They operate in the temperature range from 4.2 K to 2 K, in which the NbN SSPDs exhibit their best performance. The receiver unit has been designed as a cryostat insert, placed inside a standard liquid-helium storage dewar. The input of the receiver consists of a pair of single-mode optical fibers, equipped with the standard FC connectors and kept at room temperature. Coupling between the SSPD and the fiber is achieved using a specially designed, precise micromechanical holder that places the fiber directly on top of the SSPD nanostructure. Our receivers achieve the quantum efficiency of up to 7% for near-IR photons, with the coupling efficiency of about 30%. The response time was measured to be <300 ps and it was limited by our read-out electronics. The jitter of fiber-coupled SSPDs is <35 ps and their dark-count rate is below 1 s/sup -1/. The presented performance parameters show that our single-photon receivers are fully applicable for quantum-correlation-type QC systems, including practical quantum cryptography.

Abstract: We report on receiver noise measurement results of phonon-cooled HEB beam lead mixers on 3 μm thick silicon. This type of ultra-thin mixer chip with integrated beam leads allows easy assembly into a block and holds great promise for array integration. Receiver measurements from 600-720 GHz are presented with a minimum noise temperature of 500 K at 666 GHz. These results verify the mixer performance of the SOI processing techniques allowing for further design and integration of SOI pHEB mixers in receivers operating above 1 THz.

Abstract: In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).