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Author Astakhov, V I; Vanin, N V; Galaktionov, V V; Dorokhov, V M; Zakharov, V M; Khattatov, V U
Title (down) Use of laser heterodyne spectrometry in determining monochromatic atmospheric transmission Type Journal Article
Year 1979 Publication Sov. J. Quantum Electron. Abbreviated Journal
Volume 9 Issue 10 Pages 1245-1250
Keywords IR applications
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ISSN 0049-1748 ISBN Medium
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Notes Approved no
Call Number Serial 489
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Author Baeva, E. M.; Titova, N. A.; Kardakova, A. I.; Piatrusha, S. U.; Khrapai, V. S.
Title (down) Universal bottleneck for thermal relaxation in disordered metallic films Type Journal Article
Year 2020 Publication JETP Lett. Abbreviated Journal Jetp Lett.
Volume 111 Issue 2 Pages 104-108
Keywords NbN disordered metallic films, thermal relaxation
Abstract We study the heat relaxation in current biased metallic films in the regime of strong electron–phonon coupling. A thermal gradient in the direction normal to the film is predicted, with a spatial temperature profile determined by the temperature-dependent heat conduction. In the case of strong phonon scattering, the heat conduction occurs predominantly via the electronic system and the profile is parabolic. This regime leads to the linear dependence of the noise temperature as a function of bias voltage, in spite of the fact that all the dimensions of the film are large compared to the electron–phonon relaxation length. This is in stark contrast to the conventional scenario of relaxation limited by the electron–phonon scattering rate. A preliminary experimental study of a 200-nm-thick NbN film indicates the relevance of our model for materials used in superconducting nanowire single-photon detectors.
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ISSN 0021-3640 ISBN Medium
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Notes Approved no
Call Number Serial 1164
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Author Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P.
Title (down) Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors Type Journal Article
Year 2015 Publication Carbon Abbreviated Journal Carbon
Volume 87 Issue Pages 330-337
Keywords carbon nanotubes, CNT detectors, field effect transistors, FET
Abstract Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.
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ISSN 0008-6223 ISBN Medium
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Notes Approved no
Call Number Serial 1778
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Author Hosseini, M.; Campbell, G.; Sparkes, B. M.; Lam, P. K.; Buchler, B. C.
Title (down) Unconditional room-temperature quantum memory Type Journal Article
Year 2011 Publication Nature Physics Abbreviated Journal Nat. Phys.
Volume 7 Issue 10 Pages 794-798
Keywords fromIPMRAS
Abstract Just as classical information systems require buffers and memory, the same is true for quantum information systems. The potential that optical quantum information processing holds for revolutionizing computation and communication is therefore driving significant research into developing optical quantum memory. A practical optical quantum memory must be able to store and recall quantum states on demand with high efficiency and low noise. Ideally, the platform for the memory would also be simple and inexpensive. Here, we present a complete tomographic reconstruction of quantum states that have been stored in the ground states of rubidium in a vapour cell operating at around 80 °C. Without conditional measurements, we show recall fidelity up to 98% for coherent pulses containing around one photon. To unambiguously verify that our memory beats the quantum no-cloning limit we employ state-independent verification using conditional variance and signal-transfer coefficients.
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Call Number RPLAB @ gujma @ Serial 824
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Author Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikov, Sergey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory
Title (down) Ultrawide noise bandwidth of NbN hot-electron bolometer mixers with in situ gold contacts Type Journal Article
Year 2011 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 21 Issue 3 Pages 620-623
Keywords NbN HEB mixer bandwidth
Abstract We report a noise bandwidth of 7 GHz in the new generation of NbN hot-electron bolometer (HEB) mixers that are being developed for the space observatory Millimetron. The HEB receiver driven by a 2.5-THz local oscillator offered a noise temperature of 600 K in a 50-MHz final detection bandwidth. As the filter center frequency was swept this value remained nearly constant up to the cutoff frequency of the cryogenic amplifier at 7 GHz. We believe that such a low value of the noise temperature is due to reduced radio frequency (RF) loss at the interface between the superconducting film and the gold contacts. We have also performed gain bandwidth measurements at the superconducting transition on HEB mixers with various lengths and found them to be in excellent agreement with the results of the analytical and numerical models developed for the HEB mixer with both diffusion and phonon cooling of hot electrons.
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Call Number RPLAB @ gujma @ Serial 716
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