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Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
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Title  |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
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Journal Article |
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Year |
1991 |
Publication |
Phys. B Condens. Mat. |
Abbreviated Journal |
Phys. B Condens. Mat. |
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Volume |
169 |
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1-4 |
Pages |
629-630 |
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Keywords |
impure superconductors |
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Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that frequency range of enhancement effect narrows with the decrease of electron mean free path, ℓ, and at ℓ⩽1nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on ℓ are explained by taking into account strong electron-electron interaction in impure metals. |
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0921-4526 |
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1682 |
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Author |
Gershenzon, E. M.; Gol'tsman, G. N.; Potapov, V. D.; Sergeev, A. V. |
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Title |
Restriction of microwave enhancement of superconductivity in impure superconductors due to electron-electron interaction |
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Journal Article |
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Year |
1990 |
Publication |
Solid State Communications |
Abbreviated Journal |
Solid State Communications |
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Volume |
75 |
Issue |
8 |
Pages |
639-641 |
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Keywords |
impure superconductors |
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Transition from microwave enhancement of supercurrent to superconductivity suppression is investigated in impure superconductors. It is demonstrated that the frequency range of the enhancement effect narrows with the decrease of the electron mean free path, l, and at l ⩽ 1 nm electron heating is observed in the whole frequency range. Dependences of frequency boundaries on l are explained by taking into account strong electron-electron interaction in impure metals. |
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0038-1098 |
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1687 |
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Zhang, Jin; Slysz, W.; Verevkin, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Lipatov, A.; Gol'tsman, G. N.; Sobolewski, R. |
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Title |
Response time characterization of NbN superconducting single-photon detectors |
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Journal Article |
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2003 |
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IEEE Trans. Appl. Supercond. |
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13 |
Issue |
2 |
Pages |
180-183 |
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Keywords |
SSPD jitter, SNSPD jitter |
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We report our time-resolved measurements of NbN-based superconducting single-photon detectors. The structures are meander-type, 10-nm thick, and 200-nm wide stripes and were operated at 4.2 K. We have shown that the NbN devices can count single-photon pulses with below 100-ps time resolution. The response signal pulse width was about 150 ps, and the system jitter was measured to be 35 ps. |
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IEEE |
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1058 |
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Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. |
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Title |
Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation |
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Journal Article |
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Year |
2015 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
118 |
Issue |
19 |
Pages |
194303 |
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Keywords |
terahertz detectors, asymmetric carbon nanotubes, CNT |
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Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. |
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0021-8979 |
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1169 |
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Bandurin, D. A.; Svintsov, D.; Gayduchenko, I.; Xu, S. G.; Principi, A.; Moskotin, M.; Tretyakov, I.; Yagodkin, D.; Zhukov, S.; Taniguchi, T.; Watanabe, K.; Grigorieva, I. V.; Polini, M.; Goltsman, G. N.; Geim, A. K.; Fedorov, G. |
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Title |
Resonant terahertz detection using graphene plasmons |
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Journal Article |
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2018 |
Publication |
Nat. Commun. |
Abbreviated Journal |
Nat. Commun. |
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Volume |
9 |
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5392 (1 to 8) |
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Keywords |
THz, graphene plasmons |
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Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moire minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures) and promise a viable route for various photonic applications. |
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Physics Department, Moscow State University of Education (MSPU), Moscow, Russian Federation, 119435. fedorov.ge@mipt.ru |
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2041-1723 |
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1148 |
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Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E. |
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Relaxation of the resistive superconducting state in boron-doped diamond films |
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Journal Article |
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2016 |
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Phys. Rev. B |
Abbreviated Journal |
Phys. Rev. B |
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93 |
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6 |
Pages |
064506 |
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boron-doped diamond films, resistive superconducting state, relaxation time |
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We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc. |
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2469-9950 |
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1167 |
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Krause, S.; Mityashkin, V.; Antipov, S.; Gol’tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudziński, M. |
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Reduction of phonon escape time for nbn hot electron bolometers by using gan buffer layers |
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Journal Article |
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2017 |
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IEEE Trans. Terahertz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. Terahertz Sci. Technol. |
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7 |
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1 |
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53-59 |
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NbN HEB mixer |
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In this paper, we investigated the influence of the GaN buffer layer on the phonon escape time of phonon-cooled hot electron bolometers (HEBs) based on NbN material and compared our findings to conventionally employed Si substrate. The presented experimental setup and operation of the HEB close to the critical temperature of the NbN film allowed for the extraction of phonon escape time in a simplified manner. Two independent experiments were performed at GARD/Chalmers and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. By fitting the normalized IF measurement data to the heat balance equations, the escape time as a fitting parameter has been deduced and amounts to 45 ps for the HEB based on Si substrate as in contrast to a significantly reduced escape time of 18 ps for the HEB utilizing the GaN buffer layer under the assumption that no additional electron diffusion has taken place. This study indicates a high phonon transmissivity of the NbN-to-GaN interface and a prospective increase of IF bandwidth for HEB made of NbN on GaN buffer layers, which is desirable for future THz HEB heterodyne receivers. |
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2156-3446 |
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1330 |
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Yang, Z. Q.; Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Voronov, B.; Gol’tsman, G. N. |
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Reduced noise in NbN hot-electron bolometer mixers by annealing |
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2006 |
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Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
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19 |
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4 |
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L (9 to 12) |
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NbN HEB mixers |
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We find that the sensitivity of heterodyne receivers based on superconducting hot-electron bolometers (HEBs) increases by 25–30% after annealing at 85 °C in vacuum. The devices studied are twin-slot antenna coupled mixers with a small NbN bridge of 1 × 0.15 µm2. We show that annealing changes the device properties as reflected in sharper resistive transitions of the complete device, apparently reducing the device-related noise. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and a bath temperature of 4.3 K. |
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0953-2048 |
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1456 |
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Korneev, A.; Korneeva, Y.; Manova, N.; Larionov, P.; Divochiy, A.; Semenov, A.; Chulkova, G.; Vachtomin, Y.; Smirnov, K.; Goltsman, G. |
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Recent nanowire superconducting single-photon detector optimization for practical applications |
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Journal Article |
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2013 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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23 |
Issue |
3 |
Pages |
2201204 (1 to 4) |
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SSPD, SNSPD |
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In this paper, we present our approaches to the development of fiber-coupled superconducting single photon detectors with enhanced photon absorption. For such devices we have measured detection efficiency in wavelength range from 500 to 2000 nm. The best fiber coupled devices exhibit detection efficiency of 44.5% at 1310 nm wavelength and 35.5% at 1550 nm at 10 dark counts per second. |
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RPLAB @ akorneev @ KorneevIEEE2013 |
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996 |
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Tikhonov, V. V.; Boyarskii, D. A.; Polyakova, O. N.; Dzardanov, A. L.; Goltsman, G. N. |
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Radiophysical and dielectric properties of ore minerals in 12--145 GHz frequency range |
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Journal Article |
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2010 |
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PIER B |
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PIER B |
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25 |
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349-367 |
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complex permittivity, ore minerals |
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The paper discusses a retrieval technique of complex permittivity of ore minerals in frequency ranges of 12--38 GHz and 77--145 GHz. The method is based on measuring frequency dependencies of transmissivity and reflectivity of plate-parallel mineral samples. In the 12--38 GHz range, the measurements were conducted using a panoramic standing wave ratio and attenuation meter. In the 77--145 GHz range, frequency dependencies of transmissivity and reflectivity were obtained using millimeter-band spectrometer with backward-wave oscillators. The real and imaginary parts of complex permittivity of a mineral were determined solving an equation system for frequency dependencies of transmissivity and reflectivity of an absorbing layer located between two dielectric media. In the course of the work, minerals that are primary ores in iron, zinc, copper and titanium mining were investigated: magnetite, hematite, sphalerite, chalcopyrite, pyrite, and ilmenite. |
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RPLAB @ gujma @ |
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