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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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Karasik, B. S., Milostnaya, I. I., Zorin, M. A., Elantev, A. I., Gol'tsman, G. N., & Gershenzon, E. M. (1995). High speed current switching of homogeneous YBaCuO film between superconducting and resistive states. IEEE Trans. Appl. Supercond., 5(2), 3042–3045.
Abstract: Transitions of thin structured YBaCuO films from superconducting (S) to normal (N) state and back induced by a supercritical current pulse has been studied. A subnanosecond stage in the film resistance dynamic has been observed. A more gradual (nanosecond) ramp in the time dependence of the resistance follows the fast stage. The fraction of the film resistance which is attained during the fast S-N stage rises with the current amplitude. Subnanosecond N-S switching is more pronounced for smaller amplitudes of driving current and for shorter pulses. The phenomena observed are viewed within the framework of an electron heating model. The expected switching time and repetition rate of an optimized current controlling device are estimated to be 1-2 ps and 80 GHz respectively.
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Yagoubov, P., Kroug, M., Merkel, H., Kollberg, E., Schubert, J., Hubers, H. - W., et al. (1999). Heterodyne measurements of a NbN superconducting hot electron mixer at terahertz frequencies. IEEE Trans. Appl. Supercond., 9(2), 3757–3760.
Abstract: The performance of a NbN based phonon-cooled Hot Electron Bolometric (HEB) quasioptical mixer is investigated in the 0.65-3.12 THz frequency range. The device is made from a 3 nm thick NbN film on high resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are 0.2/spl times/2 /spl mu/m. The best results of the DSB noise temperature at 1.5 GHz IF frequency obtained with one device are: 1300 K at 650 GHz, 4700 K at 2.5 THz and 10000 K at 3.12 THz. The measurements were performed at 4.5 K ambient temperature. The amount of local oscillator (LO) power absorbed in the bolometer is about 100 nW. The mixer is linear to within 1 dB compression up to the signal level 10 dB below that of the LO. The intrinsic single sideband conversion gain measured at 650 GHz is -9 dB, the total conversion gain is -14 dB.
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Kroug, M., Cherednichenko, S., Choumas, M., Merkel, H., Kollberg, E., Hübers, H. - W., et al. (2001). HEB quasi-optical heterodyne receiver for THz frequencies. In Proc. 12th Int. Symp. Space Terahertz Technol. (pp. 244–252). San Diego, CA, USA.
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Gershenzon, E., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1981). Heating of quasiparticles in a superconducting film in the resistive state. JETP Lett., 34(5), 268–271.
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semyonov, A. D., & Sergeev, A. V. (1984). Heating of electrons in superconductor in the resistive state due to electromagnetic radiation. Solid State Communications, 50(3), 207–212.
Abstract: The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields.
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Gershenzon, E. M., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1992). Heating of electrons in resistive state of superconducting films. Detectors, mixers and switches. In Progress in High Temperature Superconductivity (Vol. 32, pp. 190–195).
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Gershenzon, E. M., Gershenzon, M. E., Gol'tsman, G. N., Semenov, A. D., & Sergeev, A. V. (1984). Heating of electrons in a superconductor in the resistive state by electromagnetic radiation. Sov. Phys. JETP, 59(2), 442–450.
Abstract: The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction.
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Sergeev, A., Semenov, A., Trifonov, V., Karasik, B., Gol'tsman, G., & Gershenzon, E. (1994). Heat transfer in YBaCuO thin film/sapphire substrate system. J. Supercond., 7(2), 341–344.
Abstract: The thermal boundary resistance at the YBaCuO thin film/Al2O3 substrate interface was investigated. The transparency for thermal phonons incident on the interface as well as for phonons moving from the substrate was determined. We have measured a transient voltage response of current-biased films to continuously modulated radiation. The observed knee in the modulation frequency dependence of the response reflects the crossover from the diffusion regime to the contact resistance regime of the heat transfer across the interface. The values of transparency were independently deduced both from the phonon escape time and from the time of phonon return to the film which were identified with peculiarities in the frequency dependence. The results are much more consistent with the acoustic mismatch theory than the diffuse mismatch model.
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Lang, P. T., Knott, W. J., Leipold, I., Renk, K. F., Semenov, A. D., & Gol'tsman, G. N. (1992). Generation and detection of tunable ultrashort infrared and far-infrared radiation pulses of high intensity. Int. J. of Infrared and Millimeter Waves, 13(3), 373–380.
Abstract: We report on generation and detection of intense pulsed radiation with frequency tunability in the infrared and far-infrared spectral regions. Infrared radiation is generated with a transversally electrically excited high pressure CO2 laser. A laser pulse of a total duration of about 300 ns consisted, due to self mode locking, of a series of single pulses, some with pulse durations of less than 450 ps and peak powers larger than 20 MW. Using these pulses for optical with durations less than 400 ps were obtained. For detection a new ultrafast superconducting detector was used.
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Cherednichenko, S., Drakinskiy, V., Baubert, J., Krieg, J. - M., Voronov, B., Gol'tsman, G., et al. (2007). Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes. J. Appl. Phys., 101(12), 124508 (1 to 6).
Abstract: The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
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Ekstörm, H., Kollberg, E., Yagoubov, P., Gol'tsman, G., Gershenzon, E., & Yngvesson, S. (1997). Gain and noise bandwidth of NbN hot-electron bolometric mixers. Appl. Phys. Lett., 70(24), 3296–3298.
Abstract: We have measured the noise performance and gain bandwidth of 35 Å thin NbN hot-electron mixers integrated with spiral antennas on silicon substrate lenses at 620 GHz. The best double-sideband receiver noise temperature is less than 1300 K with a 3 dB bandwidth of ≈5 GHz. The gain bandwidth is 3.2 GHz. The mixer output noise dominated by thermal fluctuations is 50 K, and the intrinsic conversion gain is about −12 dB. Without mismatch losses and excluding the loss from the beamsplitter, we expect to achieve a receiver noise temperature of less than 700 K.
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Khasminskaya, S., Pyatkov, F., Słowik, K., Ferrari, S., Kahl, O., Kovalyuk, V., et al. (2016). Fully integrated quantum photonic circuit with an electrically driven light source. Nat. Photon., 10(11), 727–732.
Abstract: Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices.
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Semenov, A. D., Hübers, H. –W., Schubert, J., Gol'tsman, G. N., Elantiev, A. I., Voronov, B. M., et al. (2000). Frequency dependent noise temperature of the lattice cooled hot-electron terahertz mixer. In Proc. 11th Int. Symp. Space Terahertz Technol. (pp. 39–48).
Abstract: We present the measurements and the theoretical model on the frequency dependent noise temperature of a lattice cooled hot electron bolometer (HEB) mixer in the terahertz frequency range. The experimentally observed increase of the noise temperature with frequency is a cumulative effect of the non-uniform distribution of the high frequency current in the bolometer and the charge imbalance, which occurs near the edges of the normal domain and contacts with normal metal. In addition, we present experimental results which show that the noise temperature of a HEB mixer can be reduced by about 30% due to a Parylene antireflection coating on the Silicon hyperhemispheric lens.
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Kitaygorsky, J., Komissarov, I., Jukna, A., Minaeva, O., Kaurova, N., Divochiy, A., et al. (2007). Fluctuations in two-dimensional superconducting NbN nanobridges and nanostructures meanders. In Proc. APS March Meeting (Vol. 52, L9.00013).
Abstract: We have observed fluctuations, manifested as sub-nanosecond to nanosecond transient, millivolt-amplitude voltage pulses, generated in two-dimensional NbN nanobridges, as well as in extended superconducting meander nanostructures, designed for single photon counting. Both nanobridges and nano-stripe meanders were biased at currents close to the critical current and measured in a range of temperatures from 1.5 to 8 K. During the tests, the devices were blocked from all incoming radiation by a metallic enclosure and shielded from any external magnetic fields. We attribute the observed spontaneous voltage pulses to the Kosterlitz-Thouless-type fluctuations, where the high enough applied bias current reduces the binding energy of vortex-antivortex pairs and, subsequently, thermal fluctuations break them apart causing the order parameter to momentarily reduce to zero, which in turn causes a transient voltage pulse. The duration of the voltage pulses depended on the device geometry (with the high-kinetic inductance meander structures having longer, nanosecond, pulses) while their rate was directly related to the biasing current as well as temperature.
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