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Author | Meledin, D.; Tong, C.-Y. E.; Blundell, R.; Goltsman, G. | ||||
Title | Measurement of intermediate frequency bandwidth of hot electron bolometer mixers at terahertz frequency range | Type | Journal Article | ||
Year | 2003 | Publication | IEEE Microw. Wireless Compon. Lett. | Abbreviated Journal | IEEE Microw. Wireless Compon. Lett. |
Volume | 13 | Issue | 11 | Pages | 493-495 |
Keywords | waveguide NbN HEB mixers | ||||
Abstract | We have developed a new experimental setup for measuring the IF bandwidth of superconducting hot electron bolometer mixers. In our measurement system we use a chopped hot filament as a broadband signal source, and can perform a high-speed IF scan with no loss of accuracy when compared to coherent methods. Using this technique we have measured the 3 dB IF bandwidth of hot electron bolometer mixers, designed for THz frequency operation, and made from 3-4 nm thick NbN film deposited on an MgO buffer layer over crystalline quartz. | ||||
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Series Volume | Series Issue | Edition | |||
ISSN | 1531-1309 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1509 | |||
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Author | Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. | ||||
Title | Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths | Type | Journal Article | ||
Year | 1997 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 70 | Issue | 12 | Pages | 1619-1621 |
Keywords | NbN HEB mixers | ||||
Abstract | Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell. | ||||
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Series Volume | Series Issue | Edition | |||
ISSN | 0003-6951 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1599 | |||
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Author | Kawamura, J.; Hunter, T. R.; Tong, C. Y. E.; Blundell, R.; Papa, D. C.; Patt, F.; Peters, W.; Wilson, T.; Henkel, C.; Goltsman, G.; Gershenzon, E. | ||||
Title | Ground-based terahertz CO spectroscopy towards Orion | Type | Journal Article | ||
Year | 2002 | Publication | A&A | Abbreviated Journal | A&A |
Volume | 394 | Issue | 1 | Pages | 271-274 |
Keywords | HEB mixers, applications | ||||
Abstract | Using a superconductive hot-electron bolometer heterodyne receiver on the 10-m Heinrich Hertz Telescope on Mount Graham, Arizona, we have obtained velocity-resolved 1.037 THz CO () spectra toward several positions along the Orion Molecular Cloud (OMC-1) ridge. We confirm the general results of prior observations of high-J CO lines that show that the high temperature, , high density molecular gas, , is quite extended, found along a ~ region centered on BN/KL. However, our observations have significantly improved angular resolution, and with a beam size of we are able to spatially and kinematically discriminate the emission originating in the extended quiescent ridge from the very strong and broadened emission originating in the compact molecular outflow. The ridge emission very close to the BN/KL region appears to originate from two distinct clouds along the line of sight with and ≈ . The former component dominates the emission to the south of BN/KL and the latter to the north, with a turnover point coincident with or near BN/KL. Our evidence precludes a simple rotation of the inner ridge and lends support to a model in which there are multiple molecular clouds along the line of sight towards the Orion ridge. | ||||
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Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 322 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Gap frequency and photon absorption in a hot electron bolometer | Type | Conference Article | ||
Year | 2016 | Publication | Proc. 27th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 27th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 121 | ||
Keywords | NbN HEB; Si membrane | ||||
Abstract | The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. | ||||
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Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1204 | |||
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Author | Kawamura, Jonathan; Blundell, Raymond; Tong, C.-Y. Edward; Papa, D. Cosmo; Hunter, Todd R.; Gol'tsman, Gregory; Cherednichenko, Sergei; Voronov, Boris; Gershenzon, Eugene | ||||
Title | First light with an 800 GHz phonon-cooled HEB mixer receiver | Type | Conference Article | ||
Year | 1998 | Publication | Proc. 9th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 9th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 35-43 | ||
Keywords | HEB, mixer, LO power, local oscillator power, saturation effect, dynamic range | ||||
Abstract | Phonon-cooled superconductive hot-electron bolometric (HEB) mixers are incorporated in a waveguide receiver designed to operate near 800 Gliz. The mixer elements are thin-film nio- bium nitride microbridges with dimensions of 4 nm thickness, 0.2 to 0.3 p.m in length and 2 jun in width. At 780 GHz the best receiver noise temperature is 840 K (DSB). The mixer IF bandwidth is 2.0 GHz, the absorbed LO power is —0.1 1.1W. A fixed-tuned version of the re- ceiver was installed at the Submillimeter Telescope Observatory on Mt. Graham, Arizona, to conduct astronomical observations. These observations represent the first time that a receiver incorporating any superconducting HEB mixer has been used to detect a spectral line of celes- tial origin. | ||||
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Publisher | Place of Publication | Pasadena, California, USA | Editor | ||
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Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 572 | |||
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Author | Ryabchun, S.; Tong, C.-yu E.; Blundell, R.; Kimberk, R.; Gol’tsman, G. | ||||
Title | Effect of microwave radiation on the stability of terahertz hot-electron bolometer mixers | Type | Conference Article | ||
Year | 2006 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
Volume | 6373 | Issue | Pages | 63730J (1 to 5) | |
Keywords | NbN HEB mixers, hot-electron bolometer mixers, stability, Allan variance, LO power fluctuations | ||||
Abstract | We report our studies of the effect of microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the NbN hot-electron bolometer (HEB) mixer incorporated into a THz heterodyne receiver. It is shown that exposing the HEB mixer to microwave radiation does not result in a significant rise of the receiver noise temperature and degradation of the mixer conversion gain so long as the level of microwave power is small compared to the local oscillator drive. Hence the injection of a small, but controlled amount of microwave radiation enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the stability of HEB mixer receivers. | ||||
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Publisher | SPIE | Place of Publication | Editor | Anwar, M.; DeMaria, A.J.; Shur, M.S. | |
Language | Summary Language | Original Title | |||
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ISSN | ISBN | Medium | |||
Area | Expedition | Conference | Terahertz Physics, Devices, and Systems | ||
Notes | Approved | no | |||
Call Number | Serial | 1441 | |||
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Author | Lobanov, Y.V.; Tong, C.-Y.E.; Hedden, A.S.; Blundell, R.; Voronov, B.M.; Gol'tsman, G.N. | ||||
Title | Direct measurement of the gain and noise bandwidths of HEB mixers | Type | Journal Article | ||
Year | 2011 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 21 | Issue | 3 | Pages | 645-648 |
Keywords | waveguide NbN HEB mixers | ||||
Abstract | The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement. | ||||
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Notes | Approved | no | |||
Call Number | RPLAB @ gujma @ | Serial | 720 | ||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of a silicon membrane-based multipixel hot electron bolometer receiver | Type | Journal Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 1-5 |
Keywords | Multi-pixel, NbN HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multipixel hot electron bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin-film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 and 300 μm, respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, fed by a monolithic drilled smooth-walled horn array. | ||||
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Series Volume | Series Issue | Edition | |||
ISSN | 1051-8223 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1324 | |||
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Author | Trifonov, A.; Tong, C.-Y. E.; Grimes, P.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
Title | Development of A Silicon Membrane-based Multi-pixel Hot Electron Bolometer Receiver | Type | Conference Article | ||
Year | 2017 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
Volume | 27 | Issue | 4 | Pages | 6 |
Keywords | Multi-pixel, HEB, silicon-on-insulator, horn array | ||||
Abstract | We report on the development of a multi-pixel Hot Electron Bolometer (HEB) receiver fabricated using silicon membrane technology. The receiver comprises a 2 × 2 array of four HEB mixers, fabricated on a single chip. The HEB mixer chip is based on a superconducting NbN thin film deposited on top of the silicon-on-insulator (SOI) substrate. The thicknesses of the device layer and handling layer of the SOI substrate are 20 μm and 300 μm respectively. The thickness of the device layer is chosen such that it corresponds to a quarter-wave in silicon at 1.35 THz. The HEB mixer is integrated with a bow-tie antenna structure, in turn designed for coupling to a circular waveguide, |
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Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1111 | ||
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Author | Tong, C. Y. E.; Blundell, R.; Paine, S.; Papa, D. C.; Kawamura, J.; Stern, J.; LeDuc, H. G. | ||||
Title | Design and characterization of a 250-350 GHz fixed-tuned superconductor-insulator-insulator receiver | Type | Journal Article | ||
Year | 1996 | Publication | IEEE Trans. Microw. Theory Techn. | Abbreviated Journal | |
Volume | 44 | Issue | 9 | Pages | 1548-1556 |
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Notes | Approved | no | |||
Call Number | Serial | 273 | |||
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