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Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. |
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Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films |
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1998 |
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Phys. Rev. B |
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Phys. Rev. B |
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57 |
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24 |
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15623-15628 |
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NbC films |
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A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. |
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1585 |
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Tinkham, M.; Free, J. U.; Lau, C. N.; Markovic, N. |
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Title |
Hysteretic I–V curves of superconducting nanowires |
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2003 |
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Phys. Rev. B |
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68 |
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134515(1 to 7) |
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MoGe nanowires, self-heating effect |
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Experimental I–V curves of superconducting MoGe nanowires show hysteresis for the thicker wires and none for the thinner wires. A rather quantitative account of these data for representative wires is obtained by numerically solving the one-dimensional heat flow equation to find a self-consistent distribution of temperature and local resistivity along the wire, using the measured linear resistance R(T) as input. This suggests that the retrapping current in the hysteretic I–V curves is primarily determined by heating effects, and not by the dynamics of phase motion in a tilted washboard potential as often assumed. Heating effects and thermal fluctuations from the low-resistance state to a high-resistance, quasinormal regime appear to set independent upper bounds for the switching current. |
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Vercruyssen, N.; Verhagen, T. G. A.; Flokstra, M. G.; Pekola, J. P.; Klapwijk, T. M. |
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Evanescent states and nonequilibrium in driven superconducting nanowires |
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Journal Article |
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2012 |
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Phys. Rev. B |
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Phys. Rev. B |
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85 |
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224503(1-10) |
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Al HEB, Al superconducting nanowire, global state, bimodal state, quasiclassical kinetic equations, Usadel equation |
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We study the nonlinear response of current transport in a superconducting diffusive nanowire between normal reservoirs. We demonstrate theoretically and experimentally the existence of two different superconducting states appearing when the wire is driven out of equilibrium by an applied bias, called the global and bimodal superconducting states. The different states are identified by using two-probe measurements of the wire, and measurements of the local density of states with tunneling probes. The analysis is performed within the framework of the quasiclassical kinetic equations for diffusive superconductors. |
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898 |
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Kerman, Andrew J.; Yang, Joel K. W.; Molnar, Richard J.; Dauler, Eric A.; Berggren, Karl K. |
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Electrothermal feedback in superconducting nanowire single-photon detectors |
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Journal Article |
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2009 |
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Phys. Rev. B |
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Phys. Rev. B |
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79 |
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10 |
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4 |
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SNSPD |
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We investigate the role of electrothermal feedback in the operation of superconducting nanowire single-photon detectors (SNSPDs). It is found that the desired mode of operation for SNSPDs is only achieved if this feedback is unstable, which happens naturally through the slow electrical response associated with their relatively large kinetic inductance. If this response is sped up in an effort to increase the device count rate, the electrothermal feedback becomes stable and results in an effect known as latching, where the device is locked in a resistive state and can no longer detect photons. We present a set of experiments which elucidate this effect and a simple model which quantitatively explains the results. |
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RPLAB @ gujma @ |
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680 |
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Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
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Electron–phonon interaction in disordered conductors |
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Journal Article |
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1999 |
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Phys. Rev. B Condens. Matter |
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Phys. Rev. B Condens. Matter |
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263-264 |
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190-192 |
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disordered conductors, electron-phonon interaction |
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The electron–phonon interaction is strongly modified in conductors with a small value of the electron mean free path (impure metals, thin films). As a result, the temperature dependencies of both the inelastic electron scattering rate and resistivity differ significantly from those for pure bulk materials. Recent complex measurements have shown that modified dependencies are well described at K by the electron interaction with transverse phonons. At helium temperatures, available data are conflicting, and cannot be described by an universal model. |
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0921-4526 |
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1765 |
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Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
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Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
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1997 |
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Phys. Rev. B |
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Phys. Rev. B |
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56 |
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16 |
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10089-10096 |
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disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity |
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The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range. |
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0163-1829 |
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1766 |
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Sergeev, A.; Mitin, V. |
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Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
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2000 |
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Phys. Rev. B. |
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Phys. Rev. B. |
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61 |
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9 |
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6041-6047 |
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disordered conductors, scattering potential, electron-phonon interaction |
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Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. |
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307 |
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Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E. |
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Electron heating in metallic resistors at sub-Kelvin temperature |
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2007 |
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Phys. Rev. B |
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Phys. Rev. B |
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76 |
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165426(1-9) |
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electron heating in resistor, HEB distributed model, HEB model, hot electrons |
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In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments. |
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Recommended by Klapwijk as example for writing the article on the HEB model. |
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936 |
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Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
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Title |
Electron energy relaxation in disordered superconducting NbN films |
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2020 |
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Phys. Rev. B |
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Phys. Rev. B |
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102 |
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5 |
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054501 (1 to 15) |
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NbN SSPD, SNSPD, HEB, bandwidth, relaxation time |
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We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τe−ph∼Tn with the exponents n≈3.2–3.8. We found that in this temperature range τe−ph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material. |
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Coumou, P. C. J. J.; Driessen, E. F. C.; Bueno, J.; Chapelier, C.; Klapwijk, T. M. |
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Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
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2013 |
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Phys. Rev. B |
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88 |
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18 |
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180505 (1 to 5) |
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strongly disordered superconducting TiN films, microwave resonators |
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We have studied the electrodynamic response of strongly disordered superconducting TiN films using microwave resonators, where the disordered superconductor is the resonating element in a high-quality superconducting environment of NbTiN. We describe the response assuming an effective pair-breaking mechanism modifying the density of states and compare this to local tunneling spectra obtained using scanning tunneling spectroscopy. For the least disordered film (kFl=8.7, Rs=13Ω), we find good agreement, whereas for the most disordered film (kFl=0.82, Rs=4.3kΩ), there is a strong discrepancy, which signals the breakdown of a model based on uniform properties. |
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