Abstract: We present our latest generation of ultra-fast superconducting NbN single-photon detectors (SSPD) capable of photon-number resolving (PNR). The novel SSPDs combine 10 μm x 10 μm active area with low kinetic inductance and PNR capability. That resulted in significantly reduced photoresponse pulse duration, allowing for GHz counting rates. The detector’s response magnitude is directly proportional to the number of incident photons, which makes this feature easy to use. We present experimental data on the performance of the PNR SSPDs. These detectors are perfectly suited for fibreless free-space telecommunications, as well as for ultra-fast quantum cryptography and quantum computing.

Abstract: We present our recent achievements in the development of sensitive and ultrafast thin-film superconducting sensors: hot-electron bolometers (HEB), HEB-mixers for terahertz range and infrared single-photon counters. These sensors have already demonstrated a performance that makes them devices-of-choice for many terahertz and optical applications. Keywords: Hot electron bolometer mixers, infrared single-photon detectors, superconducting device fabrication, superconducting NbN films.

Abstract: Practical quantum systems such as quantum communication (QC) or quantum measurement systems require detectors with high speed, high sensitivity, high quantum efficiency (QE), and short deadtimes along with precise timing characteristics and low dark counts. Superconducting single photon detectors (SSPDs) based on ultrathin meander type NbN nanostripes (operated at T=2-5K) are a new and highly promising type of devices fulfilling above requirements. In this paper we present results of the SSPDs nanostructure technological optimization. The base for our detector is thin-film (4nm) NbN layer deposited on 350- P m-thick sapphire substrate The active element of the detector is a meander- nanostructure made of 4-nm-thick and 100-nm-wide NbN stripe, covering 10 u 10 P m 2 area with the filling factor ~0,5. The NbN superconducting films were deposited on sapphire substrates by DC reactive magnetron sputtering whereas the meander element of the detector was patterned by the direct electron-beam lithography followed by reactive-ion etching. To enhance the SSPD efficiency at Ȝ = 1.55 P m, we have performed an approach to increase the absorption of the detector by integrating it with optical resonant cavity. An optical microcavity optimized for absorption of 1.55 P m photons was designed as an one-mirror resonator consisting of a Ȝ/4 dielectric layer and a metallic mirror. The microcavity was deposited on the top of the NbN SSPD meander. The resonator was formed by the dielectric SiO 2 layer and metal mirror made of gold or palladium. Microcavity layers were deposited using a magnetron sputtering system.