| Author |
Title  |
Year |
Publication |
Volume |
Pages |
| Il'in, K. S.; Gol'tsman, G. N.; Voronov, B. M.; Sobolewski, Roman |
Characterization of the electron energy relaxation process in NbN hot-electron devices |
1999 |
Proc. 10th Int. Symp. Space Terahertz Technol. |
|
390-397 |
| Jiang, L.; Zhang, W.; Yao, Q. J.; Lin, Z. H.; Li, J.; Shi, S. C.; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
Characterization of a quasi-optical NbN superconducting hot-electron bolometer mixer |
2005 |
Proc. PIERS |
1 |
587-590 |
| Jiang, Ling; Miao, Wei; Zhang, Wen; Li, Ning; Lin, Zhen Hui; Yao, Qi Jun; Shi, Sheng-Cai; Svechnikov, S. I.; Vakhtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Kaurova, N. S.; Gol'tsman, G. N. |
Characterization of a quasi-optical NbN superconducting HEB mixer |
2006 |
IEEE Trans. Microwave Theory Techn. |
54 |
2944-2948 |
| Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
Carrier lifetime in excited states of shallow impurities in germanium |
1977 |
JETP Lett. |
25 |
539-543 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsyna, N. G. |
Capture of photoexcited carriers by shallow impurity centers in germanium |
1979 |
Sov. Phys. JETP |
50 |
728-734 |
