Vahtomin, Y. B., Finkel, M. I., Antipov, S. V., Voronov, B. M., Smirnov, K. V., Kaurova, N. S., et al. (2002). Gain bandwidth of phonon-cooled HEB mixer made of NbN thin film with MgO buffer layer on Si. In Harvard university (Ed.), Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 259–270). Cambridge, MA, USA.
Abstract: We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.
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Baryshev, A., Lauria, E., Hesper, R., Zijlstra, T., & Wild, W. (2002). Fixed-tuned waveguide 0.6 THz SIS mixer with wide band IF. In Harward University (Ed.), Proc. 13th Int. Symp. Space Terahertz Technol. (pp. 1–9). Cambridge, MA, USA.
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Colombelli, R. (2002). FIR quantum cascade lasers at λ>20 μm and THz emitters at λ=80 μm. Phys. E: Low-dimensional Systems and Nanostructures, 13(2-4), 848–853.
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Boreiko, R. T., & Betz, A. L. (2002). Far-infrared laser emission from deuterated ammonia. Applied Physics B: Lasers and Optics, 75(8), 823–826.
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Betzler, K., & Physik, F. (2002). Fabry-Perot Interferometer.
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