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Nebosis, R. S.; Steinke, R.; Lang, P. T.; Schatz, W.; Heusinger, M. A.; Renk, K. F.; Gol’tsman, G. N.; Karasik, B. S.; Semenov, A. D.; Gershenzon, E. M. |
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Title  |
Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation |
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1992 |
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J. Appl. Phys. |
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J. Appl. Phys. |
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72 |
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11 |
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5496-5499 |
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Keywords |
YBCO HTS detectors |
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We report on a picosecond YBa2Cu3O7−δ detector for far‐infrared radiation. The detector, consisting of a current carrying structure cooled to liquid‐nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far‐infrared laser in the frequency range from 25 to 215 cm−1. We found that the sensitivity (1 mV/W) was almost constant in this frequency range. We estimated a noise equivalent power of less than 5×10−7 W Hz−1/2. Taking into account the results of a mixing experiment (in the frequency range from 4 to 30 cm−1) we suggest that the response time of the detector was few picoseconds. |
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0021-8979 |
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1668 |
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Gol’tsman, G. N.; Okunev, O.; Chulkova, G.; Lipatov, A.; Semenov, A.; Smirnov, K.; Voronov, B.; Dzardanov, A.; Williams, C.; Sobolewski, R. |
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Title |
Picosecond superconducting single-photon optical detector |
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Journal Article |
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2001 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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79 |
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6 |
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705-707 |
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NbN SSPD, SNSPD |
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We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts. |
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0003-6951 |
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1543 |
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Gershenzon, E. M.; Gogidze, I. G.; Goltsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Picosecond response on optical-range emission in thin YBaCuO films |
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1991 |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
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17 |
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22 |
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6-10 |
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Keywords |
YBCO HTS detectors |
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Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах. |
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Russian |
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1684 |
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Gershenzon, E. M.; Gol’tsman, G. N.; Sergeev, A.; Semenov, A. D. |
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Picosecond response of YBaCuO films to electromagnetic radiation |
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1990 |
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Proc. European Conf. High-Tc Thin Films and Single Crystals |
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Proc. European Conf. High-Tc Thin Films and Single Crystals |
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457-462 |
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YBCO HTS detectors |
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Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized. |
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Gorzkowski, W.; Gutowski, M.; Reich, A.; Szymczak, H. |
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European Conference , Ustroń, Poland , 30 Sept – 4 Oct 1989 |
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1695 |
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Lindgren, M.; Currie, M.; Zeng, W.-S.; Sobolewski, R.; Cherednichenko, S.; Voronov, B.; Gol'tsman, G. N. |
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Picosecond response of a superconducting hot-electron NbN photodetector |
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1998 |
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Appl. Supercond. |
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Appl. Supercond. |
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6 |
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7-9 |
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423-428 |
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NbN SSPD, SNSPD |
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The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W. |
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0964-1807 |
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