| Records |
| Author |
Miao, W.; Zhang, W.; Zhong, J. Q.; Shi, S. C.; Delorme, Y.; Lefevre, R.; Feret, A; Vacelet, T |
Title  |
Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges |
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Journal Article |
| Year |
2014 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
<ef><bf><bc>Appl. Phys. Lett. |
| Volume |
104 |
Issue |
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Pages |
052605(1-4) |
| Keywords |
NbN HEB mixers, local oscillator power, RF nonuniform absorption |
| Abstract |
We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film. |
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935 |
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| Author |
Karasik, B. S.; Elantiev, A. I. |
| Title |
Noise temperature limit of a superconducting hot-electron bolometer mixer |
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Journal Article |
| Year |
1996 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
68 |
Issue |
6 |
Pages |
853-855 |
| Keywords |
HEB mixer noise temperature, Johnson noise, thermal fluctuation noise, noise bandwidth |
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0003-6951 |
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260 |
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| Author |
Yagoubov, P.; Kroug, M.; Merkel, H.; Kollberg, E.; Gol'tsman, G.; Svechnikov, S.; Gershenzon, E. |
| Title |
Noise temperature and local oscillator power requirement of NbN phonon-cooled hot electron bolometric mixers at terahertz frequencies |
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Journal Article |
| Year |
1998 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
73 |
Issue |
19 |
Pages |
2814-2816 |
| Keywords |
NbN HEB mixers, noise temperature, local oscillator power |
| Abstract |
In this letter, the noise performance of NbN-based phonon-cooled hot electron bolometric quasioptical mixers is investigated in the 0.55–1.1 THz frequency range. The best results of the double-sideband <cd><2018>DSB<cd><2019> noise temperature are: 500 K at 640 GHz, 600 K at 750 GHz, 850 K at 910 GHz, and 1250 K at 1.1 THz. The water vapor in the signal path causes significant contribution to the measured receiver noise temperature around 1.1 THz. The devices are made from 3-nm-thick NbN film on high-resistivity Si and integrated with a planar spiral antenna on the same substrate. The in-plane dimensions of the bolometer strip are typically 0.2Ï«2 um. The amount of local oscillator power absorbed in the bolometer is less than 100 nW. |
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911 |
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| Author |
Siddiqi, I.; Prober, D. E. |
| Title |
Nb–Au bilayer hot-electron bolometers for low-noise THz heterodyne detection |
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Journal Article |
| Year |
2004 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
84 |
Issue |
8 |
Pages |
1404 |
| Keywords |
HEB, mixers, dynamic range, saturation, LO power, local oscillator power, Nb |
| Abstract |
The sensitivity of present Nb diffusion-cooled hot-electron bolometer (HEB) mixers is not quantum limited, and can be improved by reducing the superconducting transition temperature TC. Lowering TC reduces thermal fluctuations, resulting in a decrease of the mixer noise temperature TM. However, lower TC mixers have reduced dynamic range and saturate more easily due to background noise. We present 30 GHz microwave measurements on a bilayer HEB system, Nb–Au, in which TC can be tuned with Au layer thickness to obtain the maximum sensitivity for a given noise background. These measurements are intended as a guide for the optimization of THz mixers. Using a Nb–Au mixer with TC = 1.6 K, we obtain TM = 50 K with 2 nW of local oscillator (LO) power. Good mixer performance is observed over a wide range of LO power and bias voltage and such a device should not exhibit saturation in a THz receiver. |
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0003-6951 |
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571 |
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Gaggero, A.; Nejad, S. Jahanmiri; Marsili, F.; Mattioli, F.; Leoni, R.; Bitauld, D.; Sahin, D.; Hamhuis, G. J.; Nötzel, R.; Sanjines, R.; Fiore, A. |
| Title |
Nanowire superconducting single-photon detectors on GaAs for integrated quantum photonic applications |
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Journal Article |
| Year |
2010 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
97 |
Issue |
15 |
Pages |
3 |
| Keywords |
SSPD |
| Abstract |
We demonstrate efficient nanowire superconducting single photon detectors (SSPDs) based on NbN thin films grown on GaAs. NbN films ranging from 3 to 5 nm in thickness have been deposited by dc magnetron sputtering on GaAs substrates at 350 °C. These films show superconducting properties comparable to similar films grown on sapphire and MgO. In order to demonstrate the potential for monolithic integration, SSPDs were fabricated and measured on GaAs/AlAs Bragg mirrors, showing a clear cavity enhancement, with a peak quantum efficiency of 18.3% at λ = 1300 nm and T = 4.2 K. |
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RPLAB @ gujma @ |
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681 |
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Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. |
| Title |
Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate |
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Journal Article |
| Year |
2007 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
91 |
Issue |
6 |
Pages |
062504 (1 to 3) |
| Keywords |
NbN films, nanofilms |
| Abstract |
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM.
The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
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0003-6951 |
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1425 |
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Dorenbos, S. N.; Reiger, E. M.; Perinetti, U.; Zwiller, V.; Zijlstra, T.; Klapwijk, T. M. |
| Title |
Low noise superconducting single photon detectors on silicon |
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Journal Article |
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2008 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
93 |
Issue |
13 |
Pages |
131101 |
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0003-6951 |
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RPLAB @ s @ |
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436 |
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Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
| Title |
Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths |
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Journal Article |
| Year |
1997 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
70 |
Issue |
12 |
Pages |
1619-1621 |
| Keywords |
NbN HEB mixers |
| Abstract |
Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell. |
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0003-6951 |
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1599 |
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Khosropanah, P.; Gao, J. R.; Laauwen, W. M.; Hajenius, M; Klapwijk, T. M. |
| Title |
Low noise NbN hot electron bolometer mixer at 4.3 THz |
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Journal Article |
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2007 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
91 |
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Pages |
221111 (1 to 3) |
| Keywords |
NbN HEB mixers, NbN, contacts cleaning |
| Abstract |
We have studied the sensitivity of a superconducting NbN hot electron bolometer mixer integrated with a spiral antenna at 4.3 THz. Using hot/cold blackbody loads and a beam splitter all in vacuum, we measured a double sideband receiver noise temperature of 1300 K at the optimum local oscillator (LO) power of 330 nW, which is about 12 times the quantum noise (hnu/2kB). Our result indicates that there is no sign of degradation of the mixing process at the superterahertz frequencies. Moreover, a measurement method is introduced which allows us for an accurate determination of the sensitivity despite LO power fluctuations. |
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584 |
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Tretyakov, Ivan; Ryabchun, Sergey; Finkel, Matvey; Maslennikova, Anna; Kaurova, Natalia; Lobastova, Anastasia; Voronov, Boris; Gol'tsman, Gregory |
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Low noise and wide bandwidth of NbN hot-electron bolometer mixers |
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Journal Article |
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2011 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
98 |
Issue |
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033507 (1 to 3) |
| Keywords |
NbN HEB mixer |
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We report a record double sideband noise temperature of 600 K (5hν/kB) offered by a NbN hot-electron bolometer receiver at 2.5 THz. Allowing for standing wave effects, this value was found to be constant in the intermediate frequency range 1–7 GHz, which indicates that the mixer has an unprecedentedly large noise bandwidth in excess of 7 GHz. The insight into this is provided by gain bandwidth measurements performed at the superconducting transition. They show that the dependence of the bandwidth on the mixer length follows the model for an HEB mixer with diffusion and phonon cooling of the hot electrons. |
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RPLAB @ gujma @ |
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638 |
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