| Author |
Title  |
Year |
Publication |
Volume |
Pages |
| Sergeev, A.; Karasik, B. S.; Ptitsina, N. G.; Chulkova, G. M.; Il'in, K. S.; Gershenzon, E. M. |
Electron–phonon interaction in disordered conductors |
1999 |
Phys. Rev. B Condens. Matter |
263-264 |
190-192 |
| Kardakova, A. I.; Coumou, P. C. J. J.; Finkel, M. I.; Morozov, D. V.; An, P. P.; Goltsman, G. N.; Klapwijk, T. M. |
Electron–phonon energy relaxation time in thin strongly disordered titanium nitride films |
2015 |
IEEE Trans. Appl. Supercond. |
25 |
1-4 |
| Yang, Y.; Fedorov, G.; Shafranjuk, S. E.; Klapwijk, T. M.; Cooper, B. K.; Lewis, R. M.; Lobb, C. J.; Barbara, P. |
Electronic transport and possible superconductivity at Van Hove singularities in carbon nanotubes |
2015 |
Nano Lett. |
15 |
7859-7866 |
| Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. |
Electron-phonon interaction in ultrathin Nb films |
1990 |
Sov. Phys. JETP |
70 |
505-511 |
| Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. |
Electron-phonon interaction in disordered NbN films |
1994 |
Phys. B Condens. Mat. |
194-196 |
1355-1356 |
| Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E. |
Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate |
1997 |
Phys. Rev. B |
56 |
10089-10096 |
| Sergeev, A.; Mitin, V. |
Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials |
2000 |
Phys. Rev. B. |
61 |
6041-6047 |
| Gol’tsman, G. N.; Smirnov, K. V. |
Electron-phonon interaction in a two-dimensional electron gas of semiconductor heterostructures at low temperatures |
2001 |
Jetp Lett. |
74 |
474-479 |
| Sidorova, M.; Semenov, Alexej D.; Hübers, H.-W.; Ilin, K.; Siegel, M.; Charaev, I.; Moshkova, M.; Kaurova, N.; Goltsman, G. N.; Zhang, X.; Schilling, A. |
Electron energy relaxation in disordered superconducting NbN films |
2020 |
Phys. Rev. B |
102 |
054501 (1 to 15) |
| Verevkin, A. I.; Ptitsina, N. G.; Chulkova, G. M.; Gol'tsman, G. N.; Gershenzon, E. M.; Yngvesson, K. S. |
Electron energy relaxation in a 2D channel in AlGaAs-GaAs heterostructures under quasiequilibrium conditions at low temperatures |
1995 |
JETP Lett. |
61 |
591-595 |
