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Shcherbatenko, M., Lobanov, Y., Semenov, A., Kovalyuk, V., Korneev, A., Ozhegov, R., et al. (2016). Potential of a superconducting photon counter for heterodyne detection at the telecommunication wavelength. Opt. Express, 24(26), 30474–30484.
Abstract: Here, we report on the successful operation of a NbN thin film superconducting nanowire single-photon detector (SNSPD) in a coherent mode (as a mixer) at the telecommunication wavelength of 1550 nm. Providing the local oscillator power of the order of a few picowatts, we were practically able to reach the quantum noise limited sensitivity. The intermediate frequency gain bandwidth (also referred to as response or conversion bandwidth) was limited by the spectral band of a single-photon response pulse of the detector, which is proportional to the detector size. We observed a gain bandwidth of 65 MHz and 140 MHz for 7 x 7 microm2 and 3 x 3 microm2 devices, respectively. A tiny amount of the required local oscillator power and wide gain and noise bandwidths, along with unnecessary low noise amplification, make this technology prominent for various applications, with the possibility for future development of a photon counting heterodyne-born large-scale array.
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Anosov, A. A., Nemchenko, O. Y., Less, Y. A., Kazanskii, A. S., & Mansfel'd, A. D. (2015). Possibilities of acoustic thermometry for controlling targeted drug delivery. Acoust. Phys., 61(4), 488–493.
Abstract: Model acoustic thermometry experiments were conducted during heating of an aqueous liposome suspension. Heating was done to achieve the liposome phase transition temperature. At the moment of the phase transition, the thermal acoustic signal achieved a maximum and decreased, despite continued heating. During subsequent cooling of the suspension, when lipids again passed through the phase transition point, the thermal acoustic signal again increased, despite a reduction in temperature. This effect is related to an increase in ultrasound absorption by the liposome suspension at the moment of the lipid phase transition. The result shows that acoustic thermography can be used to control targeted delivery of drugs mixed in thermally sensitive liposomes, the integrity of which is violated during heating to the phase transition temperature.
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Gershenzon, E., Goltsman, G., Orlov, L., & Ptitsina, N. (1978). Population of excited-states of small admixtures in germanium. In Izv. Akad. Nauk SSSR, Seriya Fizicheskaya (Vol. 42, pp. 1154–1159). Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia.
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Gershenzon, E. M., Gol'tsman, G. N., & Ptitsina, N. G. (1979). Population and lifetime of excited states of shallow impurities in Ge. Sov. Phys. JETP, 49(2), 355–362.
Abstract: An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed.
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Shurakov, A., Mikhailov, D., Belikov, I., Kaurova, N., Zilberley, T., Prikhodko, A., et al. (2020). Planar Schottky diode with a Γ-shaped anode suspended bridge. In J. Phys.: Conf. Ser. (Vol. 1695, 012154).
Abstract: In this paper we report on the fabrication of a planar Schottky diode utilizing a Г-shaped anode suspended bridge. The bridge maintains transition between the top and bottom level planes of a 1.4 µm thick GaAs mesa. To implement the profile of a suspended bridge and inward tilt of a mesa wall adjacent to it, we make use of an anisotropic etching of gallium arsenide. The geometry proposed enables the fabrication of a diode with mesa of an arbitrary thickness to mitigate AC losses in the diode layered structure at terahertz frequencies of interest. For frequencies beyond 1 THz, it is also beneficial to use the geometry for the implementation of n-GaAs/n-InGaAs heterojunction Schottky diodes grown on InP substrate.
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Nebosis, R. S., Steinke, R., Lang, P. T., Schatz, W., Heusinger, M. A., Renk, K. F., et al. (1992). Picosecond YBa2Cu3O7−δdetector for far‐infrared radiation. J. Appl. Phys., 72(11), 5496–5499.
Abstract: We report on a picosecond YBa2Cu3O7−δ detector for far‐infrared radiation. The detector, consisting of a current carrying structure cooled to liquid‐nitrogen temperature, was studied by use of ultrashort laser pulses from an optically pumped far‐infrared laser in the frequency range from 25 to 215 cm−1. We found that the sensitivity (1 mV/W) was almost constant in this frequency range. We estimated a noise equivalent power of less than 5×10−7 W Hz−1/2. Taking into account the results of a mixing experiment (in the frequency range from 4 to 30 cm−1) we suggest that the response time of the detector was few picoseconds.
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Gol’tsman, G. N., Okunev, O., Chulkova, G., Lipatov, A., Semenov, A., Smirnov, K., et al. (2001). Picosecond superconducting single-photon optical detector. Appl. Phys. Lett., 79(6), 705–707.
Abstract: We experimentally demonstrate a supercurrent-assisted, hotspot-formation mechanism for ultrafast detection and counting of visible and infrared photons. A photon-induced hotspot leads to a temporary formation of a resistive barrier across the superconducting sensor strip and results in an easily measurable voltage pulse. Subsequent hotspot healing in ∼30 ps time frame, restores the superconductivity (zero-voltage state), and the detector is ready to register another photon. Our device consists of an ultrathin, very narrow NbN strip, maintained at 4.2 K and current-biased close to the critical current. It exhibits an experimentally measured quantum efficiency of ∼20% for 0.81 μm wavelength photons and negligible dark counts.
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Gershenzon, E. M., Gogidze, I. G., Goltsman, G. N., Semenov, A. D., & Sergeev, A. V. (1991). Picosecond response on optical-range emission in thin YBaCuO films. Pisma v Zhurnal Tekhnicheskoi Fiziki, 17(22), 6–10.
Abstract: Целью настоящей работы является целенаправленный поиск пико-секундного отклика на оптическое излучение выяснение оптимальных условий его наблюдения, а также сравнение характеристик неравновесных эффектов в оптическом и субмиллиметровом диапазонах.
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Gershenzon, E. M., Gol’tsman, G. N., Sergeev, A., & Semenov, A. D. (1990). Picosecond response of YBaCuO films to electromagnetic radiation. In W. Gorzkowski, M. Gutowski, A. Reich, & H. Szymczak (Eds.), Proc. European Conf. High-Tc Thin Films and Single Crystals (pp. 457–462).
Abstract: Radiation-induced change of the resistance was studied in the resistive state of YBaCuO films. Electron-phonon relaxation time T h was determmed from direct ep measurements and analysis of quasistationary electron heating. Temperature dependence of That TS 40 K was found to – ep be T h.. T'. The resul ts show that ep detectors with the response time of few picosecond at nitrogen temperature can be realized.
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Lindgren, M., Currie, M., Zeng, W. - S., Sobolewski, R., Cherednichenko, S., Voronov, B., et al. (1998). Picosecond response of a superconducting hot-electron NbN photodetector. Appl. Supercond., 6(7-9), 423–428.
Abstract: The ps optical response of ultrathin NbN photodetectors has been studied by electro-optic sampling. The detectors were fabricated by patterning ultrathin (3.5 nm thick) NbN films deposited on sapphire by reactive magnetron sputtering into either a 5×10 μm2 microbridge or 25 1 μm wide, 5 μm long strips connected in parallel. Both structures were placed at the center of a 4 mm long coplanar waveguide covered with Ti/Au. The photoresponse was studied at temperatures ranging from 2.15 K to 10 K, with the samples biased in the resistive (switched) state and illuminated with 100 fs wide laser pulses at 395 nm wavelength. At T=2.15 K, we obtained an approximately 100 ps wide transient, which corresponds to a NbN detector response time of 45 ps. The photoresponse can be attributed to the nonequilibrium electron heating effect, where the incident radiation increases the temperature of the electron subsystem, while the phonons act as the heat sink. The high-speed response of NbN devices makes them an excellent choice for an optoelectronic interface for superconducting digital circuits, as well as mixers for the terahertz regime. The multiple-strip detector showed a linear dependence on input optical power and a responsivity =3.9 V/W.
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