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Verevkin, A. A., Ptitsina, N. G., Smirnov, K. V., Gol'tsman, G. N., Voronov, B. M., Gershenzon, E. M., et al. (1997). Hot electron bolometer detectors and mixers based on a superconducting-two-dimensional electron gas-superconductor structure. In Proc. 4-th Int. Semicond. Device Research Symp. (pp. 163–166).
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Anfertev, V., Vaks, V., Revin, L., Pentin, I., Tretyakov, I., Goltsman, G., et al. (2017). High resolution THz gas spectrometer based on semiconductor and superconductor devices. In EPJ Web Conf. (Vol. 132, 02001 (1 to 2)).
Abstract: The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined.
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Minaeva, O., Fraine, A., Korneev, A., Divochiy, A., Goltsman, G., & Sergienko, A. (2012). High resolution optical time-domain reflectometry using superconducting single-photon detectors. In Frontiers in Opt. 2012/Laser Sci. XXVIII (Fw3a.39). Optical Society of America.
Abstract: We discuss the advantages and limitations of single-photon optical time-domain reflectometry with superconducting single-photon detectors. The higher two-point resolution can be achieved due to superior timing performance of SSPDs in comparison with InGaAs APDs.
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Fedorov, G., Gayduchenko, I., Titova, N., Moskotin, M., Obraztsova, E., Rybin, M., et al. (2018). Graphene-based lateral Schottky diodes for detecting terahertz radiation. In F. Berghmans, & A. G. Mignani (Eds.), Proc. Optical Sensing and Detection V (Vol. 10680, pp. 30–39). Spie.
Abstract: Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation.
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Gershenzon, E. M., Goltsman, G., Orlova, S., Ptitsina, N., & Gurvich, Y. (1971). Germanium hot-electron narrow-band detector. Sov. Radio Engineering And Electronic Physics, 16(8), 1346.
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