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Author David Olaya; Jian Wei; Sergei Pereverzev; Karasik, Boris S.; Kawamura, Jonat.han H.; McGrath, William R.; Sergeyev, Andrei V.; Gershenson, Michael E.
Title (down) An ultrasensitive hot-electron bolometer for low-background SMM applications Type Conference Article
Year 2006 Publication Proc. SPIE Abbreviated Journal
Volume 6275 Issue Pages 627506
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Call Number RPLAB @ s @ qoheb_det_SPIE_Olaya_2006 Serial 387
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Author Amato, Michael J.; Benford, Dominic J.; Moseley, Harvey S.; Juan Roman
Title (down) An engineering concept and enabling technologies for a large single aperture far-infrared observatory (SAFIR) Type Conference Article
Year 2003 Publication Proc. SPIE Abbreviated Journal
Volume 4850 Issue Pages 1120-1131
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Call Number RPLAB @ s @ sun_shield_SAFIR_SPIE_2003 Serial 339
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Author Goltsman, G.; Korneev, A.; Minaeva, O.; Rubtsova, I.; Chulkova, G.; Milostnaya, I.; Smirnov, K.; Voronov, B.; Lipatov, A. P.; Pearlman, A. J.; Cross, A.; Slysz, W.; Verevkin, A. A.; Sobolewski, R.
Title (down) Advanced nanostructured optical NbN single-photon detector operated at 2.0 K Type Conference Article
Year 2005 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 5732 Issue Pages 520-529
Keywords NbN SSPD, SNSPD
Abstract We present our studies on quantum efficiency (QE), dark counts, and noise equivalent power (NEP) of the latest generation of nanostructured NbN superconducting single-photon detectors (SSPDs) operated at 2.0 K. Our SSPDs are based on 4 nm-thick NbN films, patterned by electron beam lithography as highly-uniform 100÷120-nm-wide meander-shaped stripes, covering the total area of 10x10 μm2 with the meander filling factor of 0.7. Advances in the fabrication process and low-temperature operation lead to QE as high as  30-40% for visible-light photons (0.56 μm wavelength)-the saturation value, limited by optical absorption of the NbN film. For 1.55 μm photons, QE was  20% and decreased exponentially with the wavelength reaching  0.02% at the 5-μm wavelength. Being operated at 2.0-K temperature the SSPDs revealed an exponential decrease of the dark count rate, what along with the high QE, resulted in the NEP as low as 5x10-21 W/Hz-1/2, the lowest value ever reported for near-infrared optical detectors. The SSPD counting rate was measured to be above 1 GHz with the pulse-to-pulse jitter below 20 ps. Our nanostructured NbN SSPDs operated at 2.0 K significantly outperform their semiconducting counterparts and find practical applications ranging from noninvasive testing of CMOS VLSI integrated circuits to ultrafast quantum communications and quantum cryptography.
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Publisher Spie Place of Publication Editor Razeghi, M.; Brown, G.J.
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Area Expedition Conference Quantum Sensing and Nanophotonic Devices II
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Call Number Serial 1478
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Author Boreman, Glenn D.
Title (down) A Users guide to IR detectors Type Conference Article
Year 2001 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 4420 Issue Pages 79-90
Keywords optical antennas
Abstract This paper will guide the first-time user toward proper selection and use of IR detectors for applications in industrial inspection, process control, and laser measurements.
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Call Number RPLAB @ gujma @ Serial 735
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Author Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N.
Title (down) 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers Type Conference Article
Year 2006 Publication Proc. SPIE Abbreviated Journal Proc. SPIE
Volume 6275 Issue Pages 62750I (1 to 11)
Keywords HEB, mixer, membrane
Abstract A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation.
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Call Number Serial 561
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