Crespi, A., Ramponi, R., Osellame, R., Sansoni, L., Bongioanni, I., Sciarrino, F., et al. (2011). Integrated photonic quantum gates for polarization qubits. Nat. Comm., 2(566), 6.
Abstract: The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography.
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Sahu, M., Bae, M. - H., Rogachev, A., Pekker, D., Wei, T. - C., Shah, N., et al. (2009). Individual topological tunnelling events of a quantum field probed through their macroscopic consequences. Nature Phys., 5, 503–508.
Abstract: Phase slips are topological fluctuations that carry the superconducting order-parameter field between distinct current-carrying states. Owing to these phase slips, superconducting nanowires acquire electrical resistance. In such wires, it is well known that at higher temperatures phase slips occur through the process of thermal barrier-crossing by the order-parameter field. At low temperatures, the general expectation is that phase slips should proceed through quantum tunnelling events, which are known as quantum phase slips. However, resistive measurements have produced evidence both for and against the occurrence of quantum phase slips. Here, we report evidence for the observation of individual quantum phase-slip events in homogeneous ultranarrow wires at high bias currents. We accomplish this through measurements of the distribution of switching currents for which the width exhibits a rather counter-intuitive, monotonic increase with decreasing temperature. Importantly, measurements show that in nanowires with larger critical currents, quantum fluctuations dominate thermal fluctuations up to higher temperatures.
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Feofanov, A. K., Oboznov, V. A., Bol'Ginov, V. V., Lisenfeld, J., Poletto, S., Ryazanov, V. V., et al. (2010). Implementation of superconductor/ferromagnet/ superconductor. Nat. Phys., 6(8), 593–597.
Abstract: High operation speed and low energy consumption may allow the superconducting digital single-flux-quantum circuits to outperform traditional complementary metal-oxide-semiconductor logic. The remaining major obstacle towards high element densities on-chip is a relatively large cell size necessary to hold a magnetic flux quantum Φ0. Inserting a π-type Josephson junction in the cell is equivalent to applying flux Φ0/2 and thus makes it possible to solve this problem. Moreover, using π-junctions in superconducting qubits may help to protect them from noise. Here we demonstrate the operation of three superconducting circuits-two of them are classical and one quantum-that all utilize such π-phase shifters realized using superconductor/ferromagnet/superconductor sandwich technology. The classical circuits are based on single-flux-quantum cells, which are shown to be scalable and compatible with conventional niobium-based superconducting electronics. The quantum circuit is a π-biased phase qubit, for which we observe coherent Rabi oscillations. We find no degradation of the measured coherence time compared to that of a reference qubit without a π-junction.
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Pile, D. (2012). How many bits can a photon carry. Nat. Photon., 6(1), 14–15.
Abstract: Quantum physics offers a way to enhance the amount of information a photon can carry, with potential applications in optical communication, lithography, metrology and imaging.
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Freer, E. M., Grachev, O., Duan, X., Martin, S., & Stumbo, D. P. (2010). High-yield self-limiting single-nanowire assembly with dielectrophoresis. Nat. Nanotech., 5(7), 525–530.
Abstract: Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
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