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Author Tanner, M. G.; Natarajan, C. M.; Pottapenjara, V. K.; O'Connor, J. A.; Warburton, R. J.; Hadfield, R. H.; Baek, B.; Nam, S.; Dorenbos, S. N.; Bermúdez Ureña, E.; Zijlstra, T.; Klapwijk, T. M.; Zwiller, V. openurl 
  Title (down) Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon Type Journal Article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 96 Issue 22 Pages 3  
  Keywords SNSPD  
  Abstract Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.  
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  Call Number RPLAB @ gujma @ Serial 655  
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Author Santavicca,D.F.; Reulet,B.; Karasik,B.S.; Pereverzev,S.V.; Olaya, D.; Gershenson, M.E.; Frunzio, L.; Prober, D.E. openurl 
  Title (down) Energy resolution of terahertz single-photon-sensitive bolometric detectors Type Journal Article
  Year 2010 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 96 Issue 8 Pages 083505 - 083505-3  
  Keywords  
  Abstract We report measurements of the energy resolution of ultrasensitive superconducting bolometric detectors. The device is a superconducting titanium nanobridge with niobium contacts. A fast microwave pulse is used to simulate a single higher-frequency photon, where the absorbed energy of the pulse is equal to the photon energy. This technique allows precise calibration of the input coupling and avoids problems with unwanted background photons. Present devices have an intrinsic full-width at half-maximum energy resolution of approximately 23 THz, near the predicted value due to intrinsic thermal fluctuation noise.  
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  Call Number RPLAB @ akorneev @ Serial 601  
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Author Marsili, Francesco; Najafi, Faraz; Herder, Charles; Berggren, Karl K. openurl 
  Title (down) Electrothermal simulation of superconducting nanowire avalanche photodetectors Type Journal Article
  Year 2011 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 98 Issue 9 Pages 3  
  Keywords SNAP  
  Abstract We developed an electrothermal model of NbN superconducting nanowire avalanche photodetectors (SNAPs) on sapphire substrates. SNAPs are single-photon detectors consisting of the parallel connection of N superconducting nanowires. We extrapolated the physical constants of the model from experimental data and we simulated the time evolution of the device resistance, temperature and current by solving two coupled electrical and thermal differential equations describing the nanowires. The predictions of the model were in good quantitative agreement with the experimental results.  
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  Notes Approved no  
  Call Number RPLAB @ gujma @ Serial 658  
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Author Mason, Whitney; Waterman, J. R. url  doi
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  Title (down) Electrical and optical characteristics of two color mid wave HgCdTe infrared detectors Type Journal Article
  Year 1999 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.  
  Volume 74 Issue 11 Pages 1633-1635  
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  ISSN 0003-6951 ISBN Medium  
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  Notes Approved no  
  Call Number RPLAB @ s @ Serial 461  
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Author Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D. url  doi
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  Title (down) Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors Type Journal Article
  Year 2018 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.  
  Volume 112 Issue 14 Pages 141101 (1 to 5)  
  Keywords graphene field effect transistors, FET  
  Abstract Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
 
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  ISSN 0003-6951 ISBN Medium  
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  Notes Approved no  
  Call Number Serial 1309  
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