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Terai, Hirotaka; Miki, Shigehito; Yamashita, Taro; Makise, Kazumasa; Wang, Zhen |
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Demonstration of single-flux-quantum readout operation for superconducting single-photon detectors |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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97 |
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11 |
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3 |
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SSPD |
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A readout circuit using superconducting single-flux-quantum (SFQ) circuits has been developed to realize an independently addressable array of superconducting single-photon detectors (SSPDs). We tested the SFQ readout circuits by connecting with SSPDs. The error rates of readout circuits were below 10–5 for input signal amplitude of greater than 18.2 μA. Detection efficiencies (DEs) for single-photon incidents were measured both with and without the connection of a readout circuit. The observed DEs traced almost the same curves regardless of the connection of the readout circuit, except that the SSPD is likely to latch by connecting the readout circuit. |
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RPLAB @ gujma @ |
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654 |
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Barends, R.; Hajenius, M.; Gao, J. R.; Klapwijk, T. M. |
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Title |
Current-induced vortex unbinding in bolometer mixers |
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Journal Article |
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2005 |
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Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
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87 |
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263506 (1 to 3) |
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HEB mixer numerical model, HEB model, IV-curves, vortex-antivortex, Berezinskii–Kosterlitz–Thouless theory, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model, self-heating effect, temperature profile |
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We present a description of the current-voltage characteristics of hot electron bolometers in terms of the current-dependent intrinsic resistive transition of NbN films. We find that, by including this current dependence, we can correctly predict the complete current-voltage characteristics, showing excellent agreement with measurements for both low and high bias and for small as well as large devices. It is assumed that the current dependence is due to vortex-antivortex unbinding as described in the Berezinskii–Kosterlitz–Thouless theory. The presented approach will be useful in guiding device optimization for noise and bandwidth. |
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604 |
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Swetz, D. S.; Bennett, D. A.; Irwin, K. D.; Schmidt, D. R.; Ullom, J. N. |
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Current distribution and transition width in superconducting transition-edge sensors |
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Journal Article |
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2012 |
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Appl. Phys. Lett. |
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Appl. Phys. Lett. |
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101 |
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242603 |
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Present models of the superconducting-to-normal transition in transition-edge sensors (TESs) do not describe the current distribution within a biased TES. This distribution is complicated by normal-metal features that are integral to TES design. We present a model with one free parameter that describes the evolution of the current distribution with bias. To probe the current distribution experimentally, we fabricated TES devices with different current return geometries. Devices where the current return geometry mirrors current flow within the device have sharper transitions, thus allowing for a direct test of the current-flow model.Measurements from these devices show that current meanders through a TES low in the resistivetransition but flows across the normal-metal features by 40% of the normal-state resistance. Comparison of transition sharpness between device designs reveals that self-induced magnetic fields play an important role in determining the width of the superconducting transition. |
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TES, current distribution |
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Recommended by Klapwijk |
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930 |
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Mannino, Giovanni; Spinella, Corrado; Ruggeri, Rosa; La Magna, Antonino; Fisicaro, Giuseppe; Fazio, Enza; Neri, Fortunato; Privitera, Vittorio |
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Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation |
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2010 |
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Applied Physics Letters |
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Appl. Phys. Lett. |
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97 |
Issue |
2 |
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3 |
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Annealing |
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We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing. |
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Annealing |
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RPLAB @ gujma @ |
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691 |
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Gousev, Yu. P.; Semenov, A. D.; Pechen, E. V.; Varlashkin, A. V.; Nebosis, R. S.; Renk K. F |
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Title |
Coupling of terahertz radiation to a high-Т(с) superconducting hot electron bolometer mixer |
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1996 |
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Appl. Phys. Lett., |
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69 |
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691-693 |
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We report on efficient coupling of THz radiation to a high-T(c) superconducting hot electron bolometer that is suitable for heterodyne detection. Our quasioptical system consisted of a planar self-complementary spiral antenna on a dielectric substrate clamped to an extended hyperhemispherical lens. The antenna was integrated into a co-planar line for broadband intermediate frequency matching. Measurements in the homodyne regime at a frequency of 2.5 THz showed a radiation pattern with a beam width of 1° and a coupling efficiency of 0.1. We measured, at an intermediate frequency of 1.5 GHz, an output noise temperature of'160 K and estimated for the device, operated in the heterodyne regime, a system noise temperature of 30 000 K. We also discuss possibilities of significant improvement of the sensitivity. |
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RPLAB @ atomics90 @ |
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958 |
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