Baselmans, J. J. A., de Visser, P. J., Yates, S. J. C., Bueno, J., Jansen, R. M. J., Endo, A., et al. (2014). Large format, background limited arrays of kinetic inductance detectors for sub-mm astronomy. In Proc. 25th Int. Symp. Space Terahertz Technol. (64).
Abstract: Kinetic Inductance detectors have held a promise for the last decade to enable very large arrays, in excess of 10.000 pixels, with background limited sensitivity for ground- and Space Based sub-mm observatories. First we present the development of the detector chips of the A-MKID instrument: These chips contain up to 5400 detector pixel divided over up to 5 readout lines for the 350 GHz and 850 GHz atmospheric windows. The individual detectors are lens antenna coupled KIDs made of NbTiN and Aluminium that reach photon noise limited sensitivity at sky loading levels in excess of a few fW per pixel using either phase readout or amplitude readout. The ability to use phase readout is crucial as it reduces the requirements on the readout electronics of the instrument. Cross coupling between the KID resonators was mitigated by a combination of numerical simulations and a suitable position encoding of the readout resonance frequencies of the individual pixels. Beam pattern measurements are performed to demonstrate the absence of any cross talk due to resonator- resonator cross coupling. Second we present experiments on individual lens-antenna coupled detectors at 1.5 THz that are made out of aluminium. With these devices we have observed, as a function of the irradiated power at 1.5 THz, the crossover from photon noise limited performance to detector-limited performance at loading powers less than 0.1 fW. In the latter limit the device is limited by intrinsic fluctuations in the Cooper pair and quasiparticle number, i.e. Generation-Recombination noise. This results in a sensitivity corresponding to a NEP = 3.8·10 -19 W/√(Hz).
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Fedorov, G., Kardakova, A., Gayduchenko, I., Voronov, B. M., Finkel, M., Klapwijk, T. M., et al. (2014). Photothermoelectric response in asymmetric carbon nanotube devices exposed to sub-THz radiation. In Proc. 25th Int. Symp. Space Terahertz Technol. (71).
Abstract: This work reports on the voltage response of asymmetric carbon nanotube devices to sub-THz radiation at the frequency of 140 GHz. The devices contain CNT’s, which are over their length partially suspended and partially Van der Waals bonded to a SiO 2 substrate, causing a difference in thermal contact. Different heat sinking of CNTs by source and drain gives rise to temperature gradient and consequent thermoelectric power (TEP) as such a device is exposed to the sub-THz radiation. Sign of the DC signal, its power and gate voltage dependence observed at room temperature are consistent with this scenario. At liquid helium temperature the observed response is more complex. DC voltage signal of an opposite sign is observed in a narrow range of gate voltages at low temperatures and under low radiation power. We argue that this may indicate a true photovoltaic response from small gap (less than 10meV) CNT’s, an effect never reported before. While it is not clear if the observed effects can be used to develop efficient THz detectors we note that the responsivity of our devices exceeds that of CNT based devices in microwave or THz range reported before at room temperature. Besides at 4.2 K notable increase of the sample conductance (at least four-fold) is observed. Our recent results with asymmetric carbon nanotube devices response to THz radiation (2.5 THz) will also be presented.
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Baselmans, J. J. A., Baryshev, A., Hajenius, M., Gao, J. R., Klapwijk, T. M., Voronov, B., et al. (2006). Influence of the direct response on the heterodyne sensitivity of hot electron bolometer mixers. In Proc. 17th Int. Symp. Space Terahertz Technol. (81).
Abstract: We present a detailed experimental study of the direct detection effect in a small volume (0.15pm x lpm) NbN hot electron bolometer mixer. It is a quasioptical mixer with a twin slot antenna designed for 700 GHz and the measurement was done at a LO frequency of 670 GHz. The direct detection effect is characterized by a change in the mixer bias current when switching broadband radiation from a 300 K hot load to a 77 K cold load in a standard Y factor measurement. The result is, depending on the receiver under study, an increase or decrease in the receiver noise temperature. We find that the small signal noise temperature, which is the noise temperature that would be observed without the presence of the direct detection effect, and thus the one that is relevant for an astronomical observation, is 20% lower than the noise temperature obtained using 300 K and 77 K calibration loads. Thus, in our case the direct detection effect reduces the mixer sensitivity. These results are in good agreement with previous measurement at THz frequencies [1]. Other experiments report an increase in mixer sensitivity [2]. To analyze this discrepancy we have designed a separate set of experiments to find out the physical origin of the direct detection effect. Possible candidates are the bias current dependence of the mixer gain and the bias current dependence of the IF match. We measured directly the change in mixer IF match and receiver gain due to the direct detection effect. From these measurements we conclude that the direct detection effect is caused by a combination of bias current reduction when switching form the 77 K to the 300 K load in combination with the bias current dependence of the receiver gain. The bias current dependence of the receiver gain is shown to be mainly caused by the current dependence of the mixer gain. We also find that an increase in receiver sensitivity due to the direct detection effect is only possible if the noise temperature change due to the direct detection is dominated by the mixer-amplifier IF match. [1] J.J.A. Baselmans, A. Baryshev, S.F. Reker, M. Hajenius, J.R. Gao, T.M. Klapwijk, Yu.Vachtomin, S. Maslennikov, S. Antipov, B. Voronov, and G. Gol'tsman., Appl. Phys. Lett. 86, 163503 (2005). [2] S. Svechnokov, A. Verevkin, B. Voronov, E. Menschikov. E. Gershenzon, G. Gol'tsman, 9th Int. Symp. On Space THz. Techn., 45, (1999).
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Baryshev, A., Baselmans, J. J. A., Reker, S. F., Hajenius, M., Gao, J. R., Klapwijk, T. M., et al. (2005). Direct detection effect in hot electron bolometer mixers. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 463–464).
Abstract: NbN phonon cooled hot electron bolometer (HEB) mixers are currently the most sensitive heterodyne detectors at frequencies above 1.2 THz. They combine a good sensitivity (8-15 times the quantum limit), an IF bandwidth of the order of 4-6 GHz and a wide RF bandwidth from 0.7-5.2 THz. However, for use in a space based observatory, such as Herschel, it is of vital importance that the Local Oscillator (LO) power requirement of the mixer is compatible with the low output power of present day THz LO sources. This can be achieved by reducing the mixer volume and critical current. However, the large RF bandwidth and low LO power requirement of such a mixer result in a direct detection effect, characterized by a change in the bias current of the HEB when changing the RF signal from a black body load at 300 K to one at 77 K. As a result the measured sensitivity using a 300 K and 77 K calibration load differs significantly from the small signal sensitivity relevant for astronomical observations. In this article we describe a set of dedicated experiments to characterize the direct detection effect for a small volume quasi-optical NbN phonon cooled HEB mixer. We measure the direct detection effect in a small volume (0.15 μm · 1 μm · 3.5 nm) quasi- optical NbN phonon cooled HEB mixer at 1.6 THz. We found that the small signal sensitivity of the receiver is underestimated by approximately 35% due to the direct detection effect and that the optimal operating point is shifted to higher bias voltages when using calibration loads of 300 K and 77 K. Using a 200 GHz wide band-pass filter at the 4.2 K the direct detection effect virtually disappears. Heterodyne response measurements using water vapor absorption line in a gas cell confirms the existence and a magnitude of a direct detection effect. We also propose a theoretical explanation using uniform electron heating model. This direct detection effect has important implications for the calibration procedure of these receivers in real telescope systems. We are developing Nb HEBs for a large-format, diffusion-cooled hot electron bolometer (HEB) array submillimeter camera. The goal is to produce a 64 pixel array together with the University of Arizona to be used on the HHT on Mt Graham. It is designed to detect in the 850 GHz atmospheric window. We have fabricated Nb HEBs using a new angle- deposition process, which had previously produced high quality Nb-Au bilayer HEB devices at Yale. [1] We have characterized these devices using heterodyne mixing at ~30 GHz to compare to 345 GHz tests at the University of Arizona. We can also directly compare our Nb HEB mixers to SIS mixers in this same 345 GHz system. This allows us to rigorously calibrate the system’s losses and extract the mixer noise temperature in a well characterized mixer block, before undertaking the 850 GHz system. Here we give a report on the initial devices we have fabricated and characterized. * Department of Applied Physics, Yale University ** Department of Astronomy, University of Arizona [1] Applied Physics Letters 84, Number 8; p.1404-7, Feb 23 (2004)
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Baselmans, J., Kooi, J., Baryshev, A., Yang, Z. Q., Hajenius, M., Gao, J. R., et al. (2005). Full characterization of small volume NbN HEB mixers for space applications. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 457–462). Göteborg, Sweden.
Abstract: NbN phonon cooled HEB’s are one of the most promising bolometer mixer technologies for (near) future (space) applications. Their performance is usually quantified by mea- suring the receiver noise temperature at a given IF frequency, usually around 1 – 2 GHz. However, for any real applications it is vital that one fully knows all the relevant properties of the mixer, including LO power, stability, direct detection, gain bandwidth and noise bandwidth, not only the noise temperature at low IF frequencies. To this aim we have measured all these parameters at the optimal operating point of one single, small volume quasioptical NbN HEB mixer. We find a minimum noise temperature of 900 K at 1.46 THz. We observe a direct detection effect indicated by a change in bias current when changing from a 300 K hot load to a 77 K cold load. Due to this effect we overestimate the noise temperature by about 22% using a 300 K hot load and a 77 K cold load. The LO power needed to reach the optimal operating point is 80 nW at the receiver lens front, 59 nW inside the NbN bridge. However, using the isothermal technique we find a power absorbed in the NbN bridge of 25 nW, a difference of about a factor 2. We obtain a gain bandwidth of 2.3 GHz and a noise bandwidth of 4 GHz. The system Allan time is about 1 sec. in a 50 MHz spectral bandwidth and a deviation from white noise integration (governed by the radiometer equation) occurs at 0.2 sec., which implies a maximum integration time of a few seconds in a 1 MHz bandwidth spectrometer.
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Gao, G. R., Hovenier, J. N., Yang, Z. Q., Baselmans, J. J. A., Baryshev, A., Hajenius, M., et al. (2005). A novel terahertz heterodyne receiver based on a quantum cascade laser and a superconducting bolometer. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 19–23). Göteborg, Sweden.
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Hajenius, M., Baselmans, J. J. A., Gao, J. R., Klapwijk, T. M., de Korte, P. A. J., Voronov, B., et al. (2003). Improved NbN phonon cooled hot electron bolometer mixers. In Proc. 14th Int. Symp. Space Terahertz Technol. (pp. 413–423). Tucson, USA.
Abstract: NbN phonon-cooled hot electron bolometer mixers (HEBs) have been realized with negligible contact resistance to Au pads. By adding either a 5 nm Nb or a 10 nm NbTiN layer between the Au and NbN, to preserve superconductivity in the NbN under the Au contact pad, superior noise temperatures have been obtained. Using DC I,V curves and resistive transitions in combination with process parameters we analyze the nature of these improved devices and determine interface transparencies.
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Jackson, B. D., Hesper, R., Adema, J., Barkhof, J., Baryshev, A. M., Zijlstra, T., et al. (2009). Series production of state-of-the-art 602-720 GHz SIS receivers for band 9 of ALMA. In Proc. 20th Int. Symp. Space Terahertz Technol. (pp. 7–11).
Abstract: The Atacama Large Millimeter/Sub-millimeter Array (ALMA) requires the development and production of 73 state-of-the-art receivers for the 602-720 GHz range – the ALMA Band 9 cartridges. Development and pre-production of the first 8 cartridges was completed between 2003 and 2008, resulting in a cartridge design that meets the project's challenging requirements. The cartridge design remains essentially unchanged for production, while the production and test processes developed during pre-production have been fine-tuned to address the biggest new challenge for this phase – ramping up production to a rate of 2 cartridges per month over 2009-2012.
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Klapwijk, T. M., Barends, R., Gao, J. R., Hajenius, M., & Baselmans, J. J. A. (2004). Improved superconducting hot-electron bolometer devices for the THz range. In Proc. SPIE (Vol. 5498, pp. 129–139).
Abstract: Improved and reproducible heterodyne mixing (noise temperatures of 950 K at 2.5 THz) has been realized with NbN based hot-electron superconducting devices with low contact resistances. A distributed temperature numerical model of the NbN bridge, based on a local electron and a phonon temperature, has been used to understand the physical conditions during the mixing process. We find that the mixing is predominantly due to the exponential rise of the local resistivity as a function of electron temperature.
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Tretyakov, I., Maslennikov, S., Semenov, A., Safir, O., Finkel, M., Ryabchun, S., et al. (2015). Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers. In Proc. 26th Int. Symp. Space Terahertz Technol. (39).
Abstract: Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012).
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Finkel, M., Thierschmann, H. R., Galatro, L., Katan, A. J., Thoen, D. J., de Visser, P. J., et al. (2016). Branchline and directional THz coupler based on PECVD SiNx-technology. In 41st IRMMW-THz.
Abstract: A fabrication technology to realize THz microstrip lines and passive circuit components is developed and tested making use of a plasma-enhanced chemical vapor deposition grown silicon nitride (PECVD SiNx) dielectric membrane. We use 2 μm thick SiNx and 300 nm thick gold layers on sapphire substrates. We fabricate a set of structures for thru-reflect-line (TRL) calibration, with the reflection standard implemented as a short through the via. We find losses of 9.5 dB/mm at 300 GHz for a 50 Ohm line. For a branchline coupler we measure 2.5 dB insertion loss, 1 dB amplitude imbalance and 21 dB isolation. Good control over the THz lines parameters is proven by similar performance of a set of 5 structures. The directional couplers show -14 dB transmission to the coupled port, -24 dB to the isolated port and -25 dB in reflection. The SiNx membrane, used as a dielectric, is compatible with atomic force microscopy (AFM) cantilevers allowing the application of this technology to the development of a THz near-field microscope.
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Korneeva, Y., Vodolazov, D., Florya, I., Manova, N., Smirnov, E., Korneev, A., et al. (2018). Single photon detection in micron scale NbN and α-MoSi superconducting strips. In EPJ Web Conf. (Vol. 190, 04010 (1 to 2)).
Abstract: We experimentally demonstrate the single photon detection in straight micrometer-wide NbN and α-MoSi bridges. Width of the bridges is 2 µm, while the wavelength of the photon changes from 408 to 1550 nm and critical current exceeds 50% of the depairing current. Obtained results offer the alternative route for design of detectors without resonator and meander structure and indirectly confirm vortex assisted mechanism of single photon detection.
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Gao, J. R., Hajenius, M., Tichelaar, F. D., Voronov, B., Grishina, E., Klapwijk, T. M., et al. (2006). Can NbN films on 3C-SiC/Si change the IF bandwidth of hot electron bolometer mixers? In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 187–189).
Abstract: We realized ultra thin NbN films sputtered grown on a 3C-SiC/Si substrate. The film with a thickness of 3.5-4.5 nm shows a 1', of 11.8 K, which is the highest I`, observed among ultra thin NbN films on different substrates. The high-resolution transmission electron microscopy (HRTEM) studies show that the film has a monocrystalline structure, confirming the epitaxial growth on the 3C-SiC. Based on a two-temperature model and input parameters from standard NbN films on Si, simulations predict that the new film can increase the IF bandwidth of a HEB mixer by about a factor of 2 in comparison to the standard films. In addition, we find standard NbN films on Si with a T c of 9.4 K have a thickness of around 5.5 nm, being thicker than expected (3.5 nm).
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Yang, Z. Q., Hajenius, M., Baselmans, J. J. A., Gao, J. R., Klapwijk, T. M., Voronov, B., et al. (2005). Improved sensitivity of NbN hot electron bolometer mixers by vacuum baking. In Proc. 16th Int. Symp. Space Terahertz Technol. (pp. 222–225).
Abstract: We find that the sensitivity of heterodyne receivers based on superconducting hot-electron bolometer (HEB) in- creases by 25 − 30% after baking at 85 o C and in a high vacuum. The devices studied are twin-slot antenna coupled HEB mixers with a small NbN bridge of 1×0.15 μm 2 . The mixer noise temperature, gain, and resistance versus temperature curve of a HEB before and after baking are compared and analyzed. We show that baking reduces the intrinsic noise of the mixer by 37 % and makes the superconducting transition of the bridge and the contacts sharper. We argue that the reduction of the noise is due to the improvement of the transparency of the contact/film interface. The lowest receiver noise temperature of 700 K is measured at a local oscillator frequency of 1.63 THz and a bath temperature of 4.3 K.
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Gao, J. R., Hajenius, M., Baselmans, J. J. A., Yang, Z. Q., Baryshev, A. M., Barends, R., et al. (2005). Twin-slot antenna coupled NbN hot electron bolometer mixers for space applications. In Proc. 9-th WMSCI (Vol. 9, pp. 148–153). International Institute of Informatics and Systemics.
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