| Records |
| Author |
Treuttel, J.; Thomas, B.; Maestrini, A.; Wang, H.; Alderman, B.; Siles, J.V.; Davis, S.; Narhi, T. |
| Title |
A 380 GHz sub-harmonic mixer using MMIC foundry based Schottky diodes transferred onto quartz substrate |
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Conference Article |
| Year |
2009 |
Publication |
Proc. 20th Int. Symp. Space Terahertz Technol. |
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| Keywords |
Schottky |
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Charlottesville, Virginia, USA |
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586 |
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Koshelets, V. P.; Ermakov, A. B.; Filippenko, L. V.; Koryukin, O. V.; Khudchenko, A. V.; Sobolev, A. S.; Torgashin, M. Yu.; Yagoubov, P. A.; Hoogeveen, R. W. M.; Vreeling, W. J.; Wild, W.; Pylypenko, O. M. |
| Title |
Superconducting submm integrated receiver for TELIS |
Type |
Conference Article |
| Year |
2006 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
43 |
Issue |
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Pages |
1377-1380 |
| Keywords |
SIR |
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1742-6588 |
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514 |
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Yagoubov, P.; Hoogeveen, R.; Torgashin, M.; Khudchenko, A.; Koshelets, V.; Suttiwong, N.; Wagner, G.; Birk M. |
| Title |
550-650 GHz spectrometer development for TELIS |
Type |
Conference Article |
| Year |
2006 |
Publication |
Proc. 17th Int. Symp. Space Terahertz Technol. |
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Pages |
338-341 |
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SIR |
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528 |
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Murk, A.; Kämpfer, N.; Wylde, R.; Inatani, J.; Manabe, T.; Seta, M. |
| Title |
Characterization of various quasi-optical components for the submillimeter limb-sounder SMILES |
Type |
Conference Article |
| Year |
2001 |
Publication |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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Pages |
426-435 |
| Keywords |
limb-sounder |
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530 |
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Finkel, Matvey; Vachtomin, Yuriy; Antipov, Sereey; Drakinski, Vladimir; Kaurova, Natalia; Voronov, Boris; Goltsman, Greeory |
| Title |
Gain bandwidth and noise temperature of NbTiN HEB mixer |
Type |
Conference Article |
| Year |
2003 |
Publication |
Proc. 14th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 14th Int. Symp. Space Terahertz Technol. |
| Volume |
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Issue |
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Pages |
276-285 |
| Keywords |
NbTiN HEB mixer |
| Abstract |
We have determined that the gain bandwidth of phonon-cooled HEB mixer employing NbTiN films deposited on MgO layer over Si substrate is limited b y the escape of phonons to the substrate. The cut-off frequencies of 1 um long devices operating at T 71, based on 3.5 nm. 4 nm and 10 nm thick films amount to 400 Mk. 300 MHz, and 100 MHz, respectivel y . The gain bandwidth of 0.13 . um long devices fabricated from 3.5 nm thick film is larger and amounts to 0.8 GIL; at the optimal operating point and to 1.5 GIL: at larger bias. The increase of the gain bandwidth from 400 MHz up to 1.5 GH: with the change of bridge length is attributed to diffusion cooling. A double sideband noise temperature of 4000 K was obtained for heterodyne receiver utilizing pilot NbTiN HEB mixer (not optimized for normal state resistance) operating at the local oscillator frequency of 2.5 THz. |
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1500 |
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