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Fedder, H., Oesterwind, S., Wick, M., Olbrich, F., Michler, P., Veigel, T., et al. (2018). Characterization of electro-optical devices with low jitter single photon detectors – towards an optical sampling oscilloscope beyond 100 GHz. In ECOC (pp. 1–3).
Abstract: We showcase an optical random sampling scope that exploits single photon counting and apply it to characterize optical transceivers. We study single photon detectors with a jitter down to 40 ps. The method can be extended beyond 100 GHz.
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Korneev, A., Kovalyuk, V., An, P., Golikov, A., Zubkova, E., Ferrari, S., et al. (2018). Superconducting single-photon detector for integrated waveguide spectrometer. In EPJ Web Conf. (Vol. 190, 04009).
Abstract: We present our recent achievements in the development of an on-chip spectrometer consisting of arrayed waveguide grating made of Si3N4 waveguides and NbN superconducting single-photon detector.
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Moshkova, M., Morozov, P., Divochiy, A., Vakhtomin, Y., & Smirnov, K. (2019). Large active area superconducting single photon detector. In J. Phys.: Conf. Ser. (Vol. 1410, 012139).
Abstract: We present development of large active area superconducting single-photon detectors well coupled with standard 50 μm-core multi-mode fiber. The sensitive area of the SSPD is patterned using the photon-number-resolving design and occupies an area of 40×40 μm2. Using this approach, we have obtained excellent specifications: system detection efficiency of 47% measured using a 900 nm laser and low dark count rate of 100 cps. The main advantages of the approach presented are a very short dead time of the detector of 22 ns and FWHM jitter value of about 130 ps.
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Zolotov, P. I., Divochiy, A. V., Vakhtomin, Y. B., Lubenchenko, A. V., Morozov, P. V., Shurkaeva, I. V., et al. (2018). Influence of sputtering parameters on the main characteristics of ultra-thin vanadium nitride films. In J. Phys.: Conf. Ser. (Vol. 1124, 051030).
Abstract: We researched the relation between deposition and ultra-thin VN films parameters. To conduct the experimental study we varied substrate temperature, Ar and N2 partial pressures and deposition rate. The study allowed us to obtain the films with close to the bulk values transition temperatures and implement such samples in order to fabricate superconducting single-photon detectors.
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Romanov, N. R., Zolotov, P. I., Vakhtomin, Y. B., Divochiy, A. V., & Smirnov, K. V. (2018). Electron diffusivity measurements of VN superconducting single-photon detectors. In J. Phys.: Conf. Ser. (Vol. 1124, 051032).
Abstract: The research of ultrathin vanadium nitride (VN) films as a promising candidate for superconducting single-photon detectors (SSPD) is presented. The electron diffusivity measurements are performed for such devices. Devices that were fabricated out from 9.9 nm films had diffusivity coefficient of 0.41 cm2/s and from 5.4 nm – 0.54 cm2/s. Obtained values are similar to other typical SSPD materials. The diffusivity that increases along with decreasing of the film thickness is expected to allow fabrication of the devices with improved characteristics. Fabricated VN SSPDs showed prominent single-photon response in the range 0.9-1.55 µm.
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