| Author |
Title |
Year |
Publication |
Volume |
Pages |
| Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. |
Binding energy of a carrier with a neutral impurity atom in germanium and in silicon |
1971 |
JETP Lett. |
14 |
185-186 |
| Gershenzon, E. M.; Gol'tsman, G. N. |
Transitions of electrons between excited states of donors in germanium |
1971 |
JETP Lett. |
14 |
63-65 |
| Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. |
Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium |
1971 |
JETP Lett. |
14 |
241 |
| Slysz, W.; Wegrzecki, M.; Papis, E.; Gol'tsman, G. N.; Verevkin, A.; Sobolewski, R. |
A method of optimization of the NbN superconducting single-photon detector |
2004 |
INIS |
36 |
1-2 |
| Slysz, W.; Wegrzecki, M.; Bar, J.; Grabiec, P.; Gol'tsman, G. N.; Verevkin, M.; Sobolewski, R. |
NbN superconducting single-photon detectors coupled with a communication fiber |
2004 |
INIS |
37 |
1-2 |
