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Author Belosevich, V. V.; Gayduchenko, I. A.; Titova, N. A.; Zhukova, E. S.; Goltsman, G. N.; Fedorov, G. E.; Silaev, A. A.
Title Response of carbon nanotube film transistor to the THz radiation Type (up) Conference Article
Year 2018 Publication EPJ Web Conf. Abbreviated Journal EPJ Web Conf.
Volume 195 Issue Pages 05012 (1 to 2)
Keywords field-effect transistor, FET, carbon nanotube, CNT
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ISSN 2100-014X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1317
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Author Fedorov, G. E.; Gaiduchenko, I. A.; Golikov, A. D.; Rybin, M. G.; Obraztsova, E. D.; Voronov, B. M.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N.; Samartsev, V. V.; Vinogradov, E. A.; Naumov, A. V.; Karimullin, K. R.
Title Response of graphene based gated nanodevices exposed to THz radiation Type (up) Conference Article
Year 2015 Publication EPJ Web of Conferences Abbreviated Journal EPJ Web of Conferences
Volume 103 Issue Pages 10003 (1 to 2)
Keywords graphene field-effect transistor, FET
Abstract In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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ISSN 2100-014X ISBN Medium
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Notes Approved no
Call Number Serial 1350
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Author Ozhegov, R. V.; Okunev, O. V.; Gol’tsman, G. N.; Filippenko, L. V.; Koshelets, V. P.
Title Noise equivalent temperature difference of a superconducting integrated terahertz receiver Type (up) Journal Article
Year 2009 Publication J. Commun. Technol. Electron. Abbreviated Journal J. Commun. Technol. Electron.
Volume 54 Issue 6 Pages 716-720
Keywords SIS mixer SIR NETD, FFO, harmonic mixer
Abstract The dependence of the noise equivalent temperature difference (NETD) of a superconducting integrated receiver (SIR) on the receiver noise temperature and the inputsignal level has been investigated. An unprecedented NETD of 13±2 mK has been measured at a SIR noise temperature of 200 K, intermediate-frequency bandwidth of 4 GHz, and time constant of 1 s. With a decrease in the input signal, an improvement in the NETD is observed. This effect is explained by a reduction in the influence of the instabilities of the receiver power supply and the amplification circuit that occur when the input signal is decreased.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1064-2269 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1400
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Author Ozhegov, R. V.; Gorshkov, K. N.; Gol'tsman, G. N.; Kinev, N. V.; Koshelets, V. P.
Title The stability of a terahertz receiver based on a superconducting integrated receiver Type (up) Journal Article
Year 2011 Publication Supercond. Sci. Technol. Abbreviated Journal Supercond. Sci. Technol.
Volume 24 Issue 3 Pages 035003
Keywords SIS mixer, SIR, stability
Abstract We present the results of stability testing of a terahertz radiometer based on a superconducting receiver with a SIS tunnel junction as the mixer and a flux-flow oscillator as the local oscillator. In the continuum mode, the receiver with a noise temperature of 95 K at 510 GHz measured over the intermediate frequency (IF) passband of 4-8 GHz offered a noise equivalent temperature difference of 10 ± 1 mK at an integration time of 1 s. We offer a method to significantly increase the integration time without the use of complex measurement equipment. The receiver observed a strong signal over a final detection bandwidth of 4 GHz and offered an Allan time of 5 s.
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Notes Approved no
Call Number RPLAB @ gujma @ Serial 705
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Author Ovchinnikov, Yu. N.; Varlamov, A. A.
Title Fluctuation-dissipative phenomena in a narrow superconducting channel carrying current below critical Type (up) Journal Article
Year 2009 Publication arXiv Abbreviated Journal
Volume 0910.2659v1 Issue Pages 1-4
Keywords superconducting nanowire, resistance calculation
Abstract The theory of current transport in a narrow superconducting channel accounting for thermal fluctuations is developed. These fluctuations result in the appearance of small but finite dissipation in the sample. The value of corresponding voltage is found as the function of temperature (close to transition temperature) and arbitrary bias current. It is demonstrated that the value of the activation energy (exponential factor in the Arrenius law) when current approaches to the critical one is proportional to (1-J/Jc)^(5/4). This result is in concordance with the one for the affine phenomenon of the Josephson current decay due to the thermal phase fluctuations, where the activation energy proportional (1-J/J_c)^(3/2)(the difference in the exponents is related to the additional current dependence of the order parameter). Found dependence of the activation energy on current explains the enormous discrepancy between the theoretically predicted before and the experimentally observed broadening of the resistive transition.
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Notes arXiv:0910.2659v1; 4 pages, 3 figures Approved no
Call Number Serial 931
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Author Huard, B.; Pothier, H.; Esteve, D.; Nagaev, K. E.
Title Electron heating in metallic resistors at sub-Kelvin temperature Type (up) Journal Article
Year 2007 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 76 Issue Pages 165426(1-9)
Keywords electron heating in resistor, HEB distributed model, HEB model, hot electrons
Abstract In the presence of Joule heating, the electronic temperature in a metallic resistor placed at sub-Kelvin temperatures can significantly exceed the phonon temperature. Electron cooling proceeds mainly through two processes: electronic diffusion to and from the connecting wires and electron-phonon coupling. The goal of this paper is to present a general solution of the problem in a form that can easily be used in practical situations. As an application, we compute two quantities that depend on the electronic temperature profile: the second and the third cumulant of the current noise at zero frequency, as a function of the voltage across the resistor. We also consider time-dependent heating, an issue relevant for experiments in which current pulses are used, for instance, in time-resolved calorimetry experiments.
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Notes Recommended by Klapwijk as example for writing the article on the HEB model. Approved no
Call Number Serial 936
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Author Larrey, V.; Villegier, J. -C.; Salez, M.; Miletto-Granozio, F.; Karpov, A.
Title Processing and characterization of high Jc NbN superconducting tunnel junctions for THz analog circuits and RSFQ Type (up) Journal Article
Year 1999 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume 9 Issue 2 Pages 3216-3219
Keywords RSFQ, NbN, SIS
Abstract A generic NbN Superconducting Tunnel Junctions (STJ) technology has been developed using conventional substrates (Si and SOI-SIMOX) for making THz spectrometers including SIS receivers and RSFQ logic gates. NbN/MgO/NbN junctions with area of 1 /spl mu/m/sup 2/, Jc of 10 kA/cm/sup 2/ and low sub-gap leakage current (Vm>25 mV) are currently obtained from room temperature sputtered multilayers followed by a post-annealing at 250/spl deg/C. Using a thin MgO buffer layer deposited underneath the NbN electrodes, ensures lower NbN surface resistance values (Rs=7 /spl mu//spl Omega/) at 10 GHz and 4 K. Epitaxial NbN [100] films on MgO [100] with high gap frequency (1.4 THz) have also been achieved under the same deposition conditions at room temperature. The NbN SIS has shown good I-V photon induced steps when LO pumped at 300 GHz. We have developed an 8 levels Al/NbN multilayer process for making 1.5 THz SIS mixers (including Al antennas) on Si membranes patterned in SOI-SIMOX. Using the planarization techniques developed at the Si-MOS CEA-LETI Facility, we have also demonstrated on the possibility of extending our NbN technology to high level RSFQ circuit integration with 0.5 /spl mu/m/sup 2/ junction area, made on large area substrates (up to 8 inches).
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Notes Approved no
Call Number Serial 1081
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Author Samsonova, Alena; Zolotov, Philipp; Baeva, Elmira; Lomakin, Andrey; Titova, Nadezhda; Kardakova, Anna; Goltsman, Gregory
Title Signatures of surface magnetic disorder in thin niobium films Type (up) Journal Article
Year 2021 Publication IEEE Trans. Appl. Supercond. Abbreviated Journal
Volume Issue Pages 1-1
Keywords Temperature measurement, Temperature dependence, Superconducting magnets, Superconducting transition temperature, Substrates, Resistance, Scattering
Abstract We present our studies on the evolution of the normal and superconducting properties with thickness of thin Nb films with a low level of non-magnetic disorder (kFl 150 for the thickest film in the set). The analysis of the superconducting behavior points to the presence of magnetic moments, hidden in the native oxide on the surface of Nb films. Using the Abrikosov-Gorkov theory, we obtain the density of surface magnetic moments of 1013 cm-2, which is in agreement with the previously reported data for Nb films.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1051-8223 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1162
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Author Kardakova, A.; Shishkin, A.; Semenov, A.; Goltsman, G. N.; Ryabchun, S.; Klapwijk, T. M.; Bousquet, J.; Eon, D.; Sacépé, B.; Klein, T.; Bustarret, E.
Title Relaxation of the resistive superconducting state in boron-doped diamond films Type (up) Journal Article
Year 2016 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 93 Issue 6 Pages 064506
Keywords boron-doped diamond films, resistive superconducting state, relaxation time
Abstract We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5×1021cm−3 and a critical temperature of about 2K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characteristic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T−2, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature Tc, evidence for an increasing relaxation time on both sides of Tc.
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Series Volume Series Issue Edition
ISSN 2469-9950 ISBN Medium
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Notes Approved no
Call Number Serial 1167
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Author Gayduchenko, I.; Xu, S. G.; Alymov, G.; Moskotin, M.; Tretyakov, I.; Taniguchi, T.; Watanabe, K.; Goltsman, G.; Geim, A. K.; Fedorov, G.; Svintsov, D.; Bandurin, D. A.
Title Tunnel field-effect transistors for sensitive terahertz detection Type (up) Journal Article
Year 2021 Publication Nat. Commun. Abbreviated Journal Nat. Commun.
Volume 12 Issue 1 Pages 543
Keywords field-effect transistors, bilayer graphene, BLG
Abstract The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/[Formula: see text]) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
Address Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA. bandurin@mit.edu
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Language English Summary Language Original Title
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Series Volume Series Issue Edition
ISSN 2041-1723 ISBN Medium
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Notes PMID:33483488; PMCID:PMC7822863 Approved no
Call Number Serial 1261
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Author Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.
Title Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors Type (up) Journal Article
Year 2018 Publication Appl. Phys. Lett. Abbreviated Journal Appl. Phys. Lett.
Volume 112 Issue 14 Pages 141101 (1 to 5)
Keywords graphene field effect transistors, FET
Abstract Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

D.A.B. acknowledges the Leverhulme Trust for financial support. The work of D.S. was supported by Grant No. 16-19-10557 of the Russian Scientific Foundation (theoretical model). G.F., I.G., M.M., and G.G. acknowledge the Russian Science Foundation [Grant No. 14-19-01308 (MIET, cryostat upgrade) and Grant No. 17-72-30036, (MSPU, photoresponse measurements), the Ministry of Education and Science of the Russian Federation (Contract No. 14.B25.31.0007 (device fabrication) and Task No. 3.7328.2017/LS (NEP analyses)] and the Russian Foundation for Basic Research [Grant No. 15-02-07841 (device design)]. The authors are grateful to Professor M. S. Shur for helpful discussions.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0003-6951 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number Serial 1309
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Луговая, Г. Я.; Шапиро, Е. З.
Title Об интерпретации отрицательного магнитосопротивления в случае проводимости по верхней зоне Хаббарда в n-Ge⟨Sb⟩ Type (up) Journal Article
Year 1986 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 20 Issue 1 Pages 99-103
Keywords n-Ge, Hubbard upper zone conductivity, negative magnetoresistance
Abstract В рамках теории квантовых поправок к проводимости объяснено отрицательное магнитосопротивление в n-Ge с концентрацией доноров Nd≃2.8⋅1016÷1.1⋅1017см−3, наблюдаемое в диапазоне температур 4.2−10 K, когда основной вклад в проводимость дают электроны верхней зоны Хаббарда. Показано, что время релаксации фазы волновой функции τφ определяется временем электрон-фононного взаимодействия τeph.
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Notes Approved no
Call Number Serial 1759
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Author Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И.
Title Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда Type (up) Journal Article
Year 1983 Publication Физика и техника полупроводников Abbreviated Journal Физика и техника полупроводников
Volume 17 Issue 10 Pages 1873-1876
Keywords compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance
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Notes Approved no
Call Number Serial 1763
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Author Ptitsina, N. G.; Chulkova, G. M.; Il’in, K. S.; Sergeev, A. V.; Pochinkov, F. S.; Gershenzon, E. M.; Gershenson, M. E.
Title Electron-phonon interaction in disordered metal films: The resistivity and electron dephasing rate Type (up) Journal Article
Year 1997 Publication Phys. Rev. B Abbreviated Journal Phys. Rev. B
Volume 56 Issue 16 Pages 10089-10096
Keywords disordered metal films, electron-phonon interaction, electron dephasing rate, resistivity
Abstract The temperature dependence of the resistance of films of Al, Be, and NbC with small values of the electron mean free path l=1.5–10nm has been measured at 4.2–300 K. The resistance of all the films contains a T2 contribution that is proportional to the residual resistance; this contribution has been attributed to the interference between the elastic electron scattering and the electron-phonon scattering. Fitting the data to the theory of the electron-phonon-impurity interference (M. Yu. Reiser and A. V. Sergeev, Zh. Eksp. Teor. Fiz. 92, 224 (1987) [Sov. Phys. JETP 65, 1291 (1987)]), we obtain constants of interaction of the electrons with transverse phonons, and estimate the contribution of this interaction to the electron dephasing rate in thin films of Au, Al, Be, Nb, and NbC. Our estimates are in a good agreement with the experimental data on the inelastic electron-phonon scattering in these films. This indicates that the interaction of electrons with transverse phonons controls the electron-phonon relaxation rate in thin-metal films over a broad temperature range.
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Series Volume Series Issue Edition
ISSN 0163-1829 ISBN Medium
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Notes Approved no
Call Number Serial 1766
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Author Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P.
Title Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors Type (up) Journal Article
Year 2015 Publication Carbon Abbreviated Journal Carbon
Volume 87 Issue Pages 330-337
Keywords carbon nanotubes, CNT detectors, field effect transistors, FET
Abstract Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics.
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Series Volume Series Issue Edition
ISSN 0008-6223 ISBN Medium
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Notes Approved no
Call Number Serial 1778
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