Maslennikov, S. N., Finkel, M. I., Antipov, S. V., Polyakov, S. L., Zhang, W., Ozhegov, R., et al. (2006). Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70 THz. In Proc. 17th Int. Symp. Space Terahertz Technol. (pp. 177–179). Paris, France.
Abstract: We investigate both antenna coupled and directly coupled HEB mixers at several LO frequencies within the range of 2.5 THz to 70 THz. H20 (2.5+10.7 THz), and CO2 (30 THz) gas discharge lasers are used as the local oscillators. The noise temperature of antenna coupled mixers is measured at LO frequencies of 2.5 THz, 3.8 THz, and 30 THz. The results for both antenna coupled and directly coupled mixer types are compared. The devices with in—plane dimensions of 5x5 ,um 2 are pumped by LO radiation at 10.7 THz. The directly coupled HEB demonstrates nearly flat dependence of responsivity on frequency in the range of 25+64 THz.
|
Yagubov, P., Gol'tsman, G., Voronov, B., Seidman, L., Siomash, V., Cherednichenko, S., et al. (1996). The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate. In Proc. 7th Int. Symp. Space Terahertz Technol. (pp. 290–302). Charlottesville, Virginia, USA.
Abstract: We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
|
|
Kroug, M., Yagoubov, P., Gol'tsman, G., & Kollberg, E. (1997). NbN quasioptical phonon cooled hot electron bolometric mixers at THz frequencies. In Inst. Phys. Conf. Ser. (Vol. 1, pp. 405–408). Bristol.
|
Cherednichenko, S., Yagoubov, P., Il'In, K., Gol'tsman, G., & Gershenzon, E. (1997). Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 245–257).
Abstract: The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
|
Kawamura, J., Blundell, R., Tong, C. - Y. E., Gol'tsman, G., Gershenzon, E., Voronov, B., et al. (1997). Phonon-cooled NbN HEB mixers for submillimeter wavelengths. In Proc. 8th Int. Symp. Space Terahertz Technol. (pp. 23–28).
Abstract: The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz.
|
