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Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K. |
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Title |
Spiral antenna NbN hot-electron bolometer mixer at submm frequencies |
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Journal Article |
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Year |
1997 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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Volume |
7 |
Issue |
2 |
Pages |
3395-3398 |
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Keywords |
NbN HEB mixers |
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Abstract |
We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB. |
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1051-8223 |
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1597 |
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Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
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Title |
Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths |
Type |
Journal Article |
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Year |
1997 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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Volume |
70 |
Issue |
12 |
Pages |
1619-1621 |
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Keywords |
NbN HEB mixers |
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Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell. |
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0003-6951 |
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1599 |
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Cherednichenko, S.; Kollberg, E.; Angelov, I.; Drakinskiy, V.; Berg, T.; Merkel, H. |
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Title |
Effect of the direct detection effect on the HEB receiver sensitivity calibration |
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Conference Article |
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2005 |
Publication |
Proc. 16th Int. Symp. Space Terahertz Technol. |
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235-239 |
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HEB, mixer, direct detection effect |
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We analyze the scale of the HEB receiver sensitivity calibration error caused by the so called “direct detection effect”. The effect comes from changing of the HEB parameters when whey face the calibration loads of different temperatures. We found that for HIFI Band 6 mixers (Herschel Space Observatory) the noise temperature error is of the order of 8% for 300K/77K loads (lab receiver) and 2.5% for 100K/10K loads (in HIFI). Using different approach we also predict that with an isolator between the mixer and the low noise amplifiers the error can be much smaller. |
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Göteborg, Sweden |
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360 |
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Meledin, D.; Pantaleev, M.; Pavolotsky, A.; Risacher, C.; Belitsky, V.; Drakinskiy, V.; Cherednichenko, S. |
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Title |
Balanced waveguide HEB mixer for APEX 1.3 THz receiver |
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Conference Article |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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Göteborg, Sweden |
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RPLAB @ s @ wg_balanced |
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362 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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Title |
The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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Conference Article |
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Year |
1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
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290-302 |
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NbN HEB mixers, fabrication process |
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We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates |
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Conference Article |
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Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
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245-257 |
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NbN HEB mixers, fabrication process |
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The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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276 |
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Author |
Kawamura, J.; Blundell, R.; Tong, C-Y. E.; Gol'tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
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Title |
Phonon-cooled NbN HEB mixers for submillimeter wavelengths |
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Conference Article |
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Year |
1997 |
Publication |
Proc. 8th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 8th Int. Symp. Space Terahertz Technol. |
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23-28 |
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Keywords |
waveguide NbN HEB mixers |
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The noise performance of receivers incorporating NbN phonon-cooled superconducting hot electron bolometric mixers is measured from 200 GHz to 900 GHz. The mixer elements are thin-film (thickness — 4 nm) NbN with —5 to 40 pm area fabricated on crystalline quartz sub- strates. The receiver noise temperature from 200 GHz to 900 GHz demonstrates no unexpected degradation with increasing frequency, being roughly TRx ,; 1-2 K The best receiver noise temperatures are 410 K (DSB) at 430 GHz, 483 K at 636 GHz, and 1150 K at 800 GHz. |
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275 |
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Cherednichenko, S.; Kroug, M.; Merkel, H.; Kollberg, E.; Loudkov, D.; Smirnov, K.; Voronov, B.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Local oscillator power requirement and saturation effects in NbN HEB mixers |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 12th Int. Symp. Space Terahertz Technol. |
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273-285 |
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NbN HEB mixers, LO power, local oscillator power, saturation effect, dynamic range |
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The local oscillator power required for NbN hot-electron bolometric mixers (P LO ) was investigated with respect to mixer size, critical temperature and ambient temperature. P LO can be decreased by a factor of 10 as the mixer size decreases from 4×0.4 µm 2 to 0.6×0.13 µm 2 . For the smallest volume mixer the optimal local oscillator power was found to be 15 nW. We found that for such mixer no signal compression was observed up to an input signal of 2 nW which corresponds to an equivalent input load of 20,000 K. For a constant mixer volume, reduction of T c can decrease optimal local oscillator power at least by a factor of 2 without a deterioration of the receiver noise temperature. Bath temperature was found to have minor effect on the receiver characteristics. |
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San Diego, CA, USA |
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Jet Propulsion Laboratory, California Inst.it.u.t.e of Technology |
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318 |
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Kroug, M.; Cherednichenko, S.; Choumas, M.; Merkel, H.; Kollberg, E.; Hübers, H.-W.; Richter, H.; Loudkov, D.; Voronov, B.; Gol'Tsman, G. |
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Title |
HEB quasi-optical heterodyne receiver for THz frequencies |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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244-252 |
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HEB mixer, NbN, MgO, conversion gain bandwidth, noise temperature |
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San Diego, CA, USA |
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319 |
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Merkel, H. F.; Khosropanah, P.; Sigfrid Yngvesson, K.; Cherednichenko, S.; Kroug, M.; Adam, A.; Kollberg, E. |
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An active zone small signal model for hot-electron bolometric mixers |
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Conference Article |
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2001 |
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Proc. 12th Int. Symp. Space Terahertz Technol. |
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55 |
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San Diego, CA, USA |
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RPLAB @ s @ losses_in_contacts_merkel |
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320 |
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Cherednichenko, S.; Kroug, M.; Khosropanah, P.; Adam, A.; Merkel, H.; Kolberg, E.; Loudkov, D.; Voronov, B.; Gol'tsman, G.; Richter, H.; Hübers, H. W. |
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A broadband terahertz heterodyne receiver with an NbN HEB mixer |
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2002 |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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Proc. 13th Int. Symp. Space Terahertz Technol. |
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85-95 |
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NbN HEB mixers |
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We present a broadband and low noise heterodyne receiver for 1.4-1.7 THz designed for the Hershel Space Observatory. A phonon- cooled NbN HEB mixer was integrated with a normal metal double- slot antenna and an elliptical silicon lens. DSB receiver noise temperature Tr was measured from 1 GHz through 8GHz intermediate frequency band with 50 MHz instantaneous bandwidth. At 4.2 K bath temperature and at 1.6 THz LO frequency Tr is 800 K with the receiver noise bandwidth of 5 GHz. While at 2 K bath temperature Tr was as low as 700 K. At 0.6 THz and 1.1 THz a spiral antenna integrated NbN HEB mixer showed the receiver noise temperature 500 K and 800 K, though no antireflection coating was used in this case. Tr of 1100 K was achieved at 2.5 THz while the receiver noise bandwidth was 4 GHz. |
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Cambridge, MA, USA |
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Harward University |
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332 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N. |
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2.5 THz multipixel heterodyne receiver based on NbN HEB mixers |
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Conference Article |
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2006 |
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Proc. SPIE |
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Proc. SPIE |
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6275 |
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62750I (1 to 11) |
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HEB, mixer, membrane |
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A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation. |
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561 |
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Khosropanah, P.; Merkel, H.; Yngvesson, S.; Adam, A.; Cherednichenko, S.; Kollberg, E. |
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A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth |
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Conference Article |
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2000 |
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Proc. 11th Int. Symp. Space Terahertz Technol. |
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474-488 |
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HEB mixer numerical model, diffusion cooling channel, diffusion channel, distributed HEB model, distributed model |
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A distributed model for phonon-cooled superconductor hot electron bolometer (HEB) mixers is given, which is based on solving the one-dimensional heat balance equation for the electron temperature profile along the superconductor strip. In this model it is assumed that the LO power is absorbed uniformly along the bridge but the DC power absorption depends on the local resistivity and is thus not uniform. The electron temperature dependence of the resistivity is assumed to be continuous and has a Fermi form. These assumptions are used in setting up the non-linear heat balance equation, which is solved numerically for the electron temperature profile along the bolometer strip. Based on this profile the resistance of the device and the IV curves are calculated. The IV curves are in excellent agreement with measurement results. Using a small signal model the conversion gain of the mixer is obtained. The expressions for Johnson noise and thermal fluctuation noise are derived. The calculated results are in close agreement with measurements, provided that one of the parameters used is adjusted. |
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University of Michigan, Ann Arbor, MI USA |
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893 |
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Author |
Cherednichenko, S.; Yagoubov, P.; Il'in, K.; Gol'tsman, G.; Gershenzon, E. |
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Title |
Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers |
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Conference Article |
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Year |
1997 |
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Proc. 27th Eur. Microwave Conf. |
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2 |
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972-977 |
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Keywords |
HEB mixer, fabrication process |
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Abstract |
The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 nm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 um wide and 2 um long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.2 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature. |
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Jerusalem, Israel |
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IEEE |
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27th Eur. Microwave Conf. |
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1075 |
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Cherednichenko, S.; Khosropanah, P.; Adam, A.; Merkel, H. F.; Kollberg, E. L.; Loudkov, D.; Gol'tsman, G. N.; Voronov, B. M.; Richter, H.; Huebers, H.-W. |
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1.4- to 1.7-THz NbN hot-electron bolometer mixer for the Herschel space observatory |
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Conference Article |
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2003 |
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Proc. SPIE |
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Proc. SPIE |
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4855 |
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361-370 |
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Keywords |
NbN HEB mixers |
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NbN hot- electron bolometer mixers have reached the level of 10hv/k in terms of the input noise temperature with the noise bandwidth of 4-6 GHz from subMM band up to 2.5 THz. In this paper we discuss the major characteristics of this kind of receiver, i.e. the gain and the noise bandwidth, the noise temperature in a wide RF band, bias regimes and optimisation of RF coupling to the quasioptical mixer. We present the status of the development of the mixer for Band 6 Low for Herschel Telescope. |
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SPIE |
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Phillips, T.G.; Zmuidzinas, J. |
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Millimeter and Submillimeter Detectors for Astronomy |
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1521 |
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