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Svechnikov, S.; Gol'tsman, G.; Voronov, B.; Yagoubov, P.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekstrom, H.; Kollberg, E.; Semenov, A.; Gousev, Y.; Renk, K. |
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Title |
Spiral antenna NbN hot-electron bolometer mixer at submm frequencies |
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1997 |
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IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
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7 |
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2 |
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3395-3398 |
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Keywords |
NbN HEB mixers |
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Abstract |
We have studied the phonon-cooled hot-electron bolometer (HEB) as a quasioptical mixer based on a spiral antenna designed for the 0.3-1 THz frequency band and fabricated on sapphire and high resistivity silicon substrates. HEB devices were produced from superconducting 3.5-5 nm thick NbN films with a critical temperature 10-12 K and a critical current density of approximately 10/sup 7/ A/cm/sup 2/ at 4.2 K. For these devices we reached a DSB receiver noise temperature below 1500 K, a total conversion loss of L/sub t/=16 dB in the 500-700 GHz frequency range, an IF bandwidth of 3-4 GHz and an optimal LO absorbed power of /spl sime/4 /spl mu/W. We experimentally analyzed various contributions to the conversion loss and obtained an RF coupling factor of about 5 dB, internal mixer loss of 10 dB and IF mismatch of 1 dB. |
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1051-8223 |
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1597 |
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Kawamura, J.; Blundell, R.; Tong, C.-yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B.; Cherednichenko, S. |
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Title |
Low noise NbN lattice-cooled superconducting hot-electron bolometric mixers at submillimeter wavelengths |
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Journal Article |
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1997 |
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Appl. Phys. Lett. |
Abbreviated Journal |
Appl. Phys. Lett. |
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70 |
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12 |
Pages |
1619-1621 |
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Keywords |
NbN HEB mixers |
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Lattice-cooled superconducting hot-electron bolometric mixers are used in a submillimeter-wave waveguide heterodyne receiver. The mixer elements are niobium nitride film with 3.5 nm thickness and ∼10 μm2 area. The local oscillator power for optimal performance is estimated to be 0.5 μW, and the instantaneous bandwidth is 2.2 GHz. At an intermediate frequency centered at 1.4 GHz with 200 MHz bandwidth, the double sideband receiver noise temperature is 410 K at 430 GHz. The receiver has been used to detect molecular line emission in a laboratory gas cell. |
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0003-6951 |
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1599 |
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Cherednichenko, S.; Kollberg, E.; Angelov, I.; Drakinskiy, V.; Berg, T.; Merkel, H. |
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Title |
Effect of the direct detection effect on the HEB receiver sensitivity calibration |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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235-239 |
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HEB, mixer, direct detection effect |
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We analyze the scale of the HEB receiver sensitivity calibration error caused by the so called “direct detection effect”. The effect comes from changing of the HEB parameters when whey face the calibration loads of different temperatures. We found that for HIFI Band 6 mixers (Herschel Space Observatory) the noise temperature error is of the order of 8% for 300K/77K loads (lab receiver) and 2.5% for 100K/10K loads (in HIFI). Using different approach we also predict that with an isolator between the mixer and the low noise amplifiers the error can be much smaller. |
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Göteborg, Sweden |
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360 |
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Meledin, D.; Pantaleev, M.; Pavolotsky, A.; Risacher, C.; Belitsky, V.; Drakinskiy, V.; Cherednichenko, S. |
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Title |
Balanced waveguide HEB mixer for APEX 1.3 THz receiver |
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2005 |
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Proc. 16th Int. Symp. Space Terahertz Technol. |
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Göteborg, Sweden |
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RPLAB @ s @ wg_balanced |
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362 |
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Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E. |
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The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate |
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1996 |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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Proc. 7th Int. Symp. Space Terahertz Technol. |
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290-302 |
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NbN HEB mixers, fabrication process |
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We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K. |
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Charlottesville, Virginia, USA |
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266 |
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