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Korneeva, Y. P., Mikhailov, M. Y., Pershin, Y. P., Manova, N. N., Divochiy, A. V., Vakhtomin, Y. B., et al. (2014). Superconducting single-photon detector made of MoSi film. Supercond. Sci. Technol., 27(9), 095012.
Abstract: We fabricated and characterized nanowire superconducting single-photon detectors made of 4 nm thick amorphous Mox Si1−x films. At 1.7 K the best devices exhibit a detection efficiency (DE) up to 18% at 1.2 $\mu {\rm m}$ wavelength of unpolarized light, a characteristic response time of about 6 ns and timing jitter of 120 ps. The DE was studied in wavelength range from 650 nm to 2500 nm. At wavelengths below 1200 nm these detectors reach their maximum DE limited by photon absorption in the thin MoSi film.
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Takemoto, K., Nambu, Y., Miyazawa, T., Sakuma, Y., Yamamoto, T., Yorozu, S., et al. (2015). Quantum key distribution over 120 km using ultrahigh purity single-photon source and superconducting single-photon detectors. Sci. Rep., 5, 14383.
Abstract: Advances in single-photon sources (SPSs) and single-photon detectors (SPDs) promise unique applications in the field of quantum information technology. In this paper, we report long-distance quantum key distribution (QKD) by using state-of-the-art devices: a quantum-dot SPS (QD SPS) emitting a photon in the telecom band of 1.5 μm and a superconducting nanowire SPD (SNSPD). At the distance of 100 km, we obtained the maximal secure key rate of 27.6 bps without using decoy states, which is at least threefold larger than the rate obtained in the previously reported 50-km-long QKD experiment. We also succeeded in transmitting secure keys at the rate of 0.307 bps over 120 km. This is the longest QKD distance yet reported by using known true SPSs. The ultralow multiphoton emissions of our SPS and ultralow dark count of the SNSPD contributed to this result. The experimental results demonstrate the potential applicability of QD SPSs to practical telecom QKD networks.
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Sidorova, M. V., Divochiy, A. V., Vakhtomin, Y. B., & Smirnov, K. V. (2015). Ultrafast superconducting single-photon detector with a reduced active area coupled to a tapered lensed single-mode fiber. J. Nanophoton., 9(1), 093051.
Abstract: This paper presents an ultrafast niobium nitride (NbN) superconducting single-photon detector (SSPD) with an active area of 3×3 μm2 that offers better timing performance metrics than the previous SSPD with an active area of 7×7 μm2. The improved SSPD demonstrates a record timing jitter (<25 ps), an ultrashort recovery time (<2 ns), an extremely low dark count rate, and a high detection efficiency in a wide spectral range from visible part to near infrared. The record parameters were obtained due to the development of a new technique providing effective optical coupling between a detector with a reduced active area and a standard single-mode telecommunication fiber. The advantages of the new approach are experimentally confirmed by taking electro-optical measurements.
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McCarthy, A., Krichel, N. J., Gemmell, N. R., Ren, X., Tanner, M. G., Dorenbos, S. N., et al. (2013). Kilometer-range, high resolution depth imaging via 1560 nm wavelength single-photon detection. Opt. Express, 21(7), 8904–8915.
Abstract: This paper highlights a significant advance in time-of-flight depth imaging: by using a scanning transceiver which incorporated a free-running, low noise superconducting nanowire single-photon detector, we were able to obtain centimeter resolution depth images of low-signature objects in daylight at stand-off distances of the order of one kilometer at the relatively eye-safe wavelength of 1560 nm. The detector used had an efficiency of 18% at 1 kHz dark count rate, and the overall system jitter was ~100 ps. The depth images were acquired by illuminating the scene with an optical output power level of less than 250 µW average, and using per-pixel dwell times in the millisecond regime.
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Manus, M. K. M., Kash, J. A., Steen, S. E., Polonsky, S., Tsang, J. C., Knebel, D. R., et al. (2000). PICA: Backside failure analysis of CMOS circuits using picosecond imaging circuit analysis. Microelectronics Reliability, 40, 1353–1358.
Abstract: Normal operation of complementary metal-oxide semiconductor (CMOS) devices entails the emission of picosecond pulses of light, which can be used to diagnose circuit problems. The pulses that are observed from submicron sized field effect transistors (FETs) are synchronous with logic state switching. Picosecond Imaging Circuit Analysis (PICA), a new optical imaging technique combining imaging with timing, spatially resolves individual devices at the 0.5 micron level and switching events on a 10 picosecond timescale. PICA is used here for the diagnostics of failures on two VLSI microprocessors.
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