| Records |
| Author |
Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B. |
| Title |
Superconductive NbN hot-electron bolometric mixer performance at 250 GHz |
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Conference Article |
| Year |
1996 |
Publication |
Proc. 7th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 7th Int. Symp. Space Terahertz Technol. |
| Volume |
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331-336 |
| Keywords |
NbN HEB mixers |
| Abstract |
Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity. |
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945 |
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Verevkin, A.; Zhang, J.; Slysz, W.; Sobolewski, Roman; Lipatov, A.; Okunev, O.; Chulkova, G.; Korneev, A.; Smimov, K.; Gol'tsman, G. N. |
| Title |
Spectral sensitivity and temporal resolution of NbN superconducting single-photon detectors |
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Conference Article |
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2002 |
Publication |
Proc. 13th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 13th Int. Symp. Space Terahertz Technol. |
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105-111 |
| Keywords |
NbN SSPD, SNSPD |
| Abstract |
We report our studies on spectral sensitivity and time resolution of superconducting NbN thin film single-photon detectors (SPDs). Our SPDs exhibit an everimentally measured detection efficiencies (DE) from — 0.2% at 2=1550 nm up to —3% at lambda=405 nm wavelength for 10-nm film thickness devices and up to 3.5% at lambda=1550 nm for 3.5-nm film thickness devices. Spectral dependences of detection efficiency (DE) at 2=0.4 —3.0 pm range are presented. With variable optical delay setup, it is shown that NbN SPD potentially can resolve optical pulses with the repetition rate up to 10 GHz at least. The observed full width at the half maximum (FWHM) of the signal pulse is about 150-180 ps, limited by read-out electronics. The jitter of NbN SPD is measured to be —35 ps at optimum biasing. |
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1528 |
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Korneev, A.; Divochiy, A.; Marsili, F.; Bitauld, D.; Fiore, A.; Seleznev, V.; Kaurova, N.; Tarkhov, M.; Minaeva, O.; Chulkova, G.; Smirnov, K.; Gaggero, A.; Leoni, R.; Mattioli, F.; Lagoudakis, K.; Benkhaoul, M.; Levy, F.; Goltsman, G. |
| Title |
Superconducting photon number resolving counter for near infrared applications |
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Conference Article |
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2008 |
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Proc. SPIE |
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Proc. SPIE |
| Volume |
7138 |
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713828 (1 to 5) |
| Keywords |
PNR SSPD; SNSPD; Nanowire superconducting single-photon detector, ultrathin NbN film, infrared |
| Abstract |
We present a novel concept of photon number resolving detector based on 120-nm-wide superconducting stripes made of 4-nm-thick NbN film and connected in parallel (PNR-SSPD). The detector consisting of 5 strips demonstrate a capability to resolve up to 4 photons absorbed simultaneously with the single-photon quantum efficiency of 2.5% and negligibly low dark count rate. |
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Spie |
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Tománek, P.; Senderáková, D.; Hrabovský, M. |
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10.1117/12.818079 |
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1241 |
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Tretyakov, I.; Maslennikov, S.; Semenov, A.; Safir, O.; Finkel, M.; Ryabchun, S.; Kaurova, N.; Voronov, B.; Goltsman, G.; Klapwijk, T. M. |
| Title |
Impact of operating conditions on noise and gain bandwidth of NbN HEB mixers |
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Conference Article |
| Year |
2015 |
Publication |
Proc. 26th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 26th Int. Symp. Space Terahertz Technol. |
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39 |
| Keywords |
NbN HEB mixers |
| Abstract |
Hot-electron bolometer mixers (HEB’s) are the most promising devices as mixing element for terahertz spectroscopy and astronomy at frequencies beyond 1.4 THz. They have a low noise temperature and low demands on local oscillator (LO) power. 1,2 An important limitation is the IF bandwidth, of the order of a few GHz, and which in principle depends on energy relaxation due to electron- phonon processes and on diffusion-cooling. It has been proposed by Prober that a reduction in length of the HEB would lead to an increased bandwidth. 3 This appeared to be achieved by Tretyakov et al by measuring the gain bandwidth close to the critical temperature of the NbN. 2 Unfortunately, the noise bandwidth of similar devices operated at temperatures around 4.2 K appear not depend on the length. The fundamental problem to be addressed is the position-dependent superconducting state of the HEB- devices under operating conditions, which determines the conditions for the cooling of the hot quasiparticles. Some progress has been made by Barends et al in a semi-empirical model to describe the I,V curves under operating conditions at a bath temperature around 4.2 K. 4 In more recent work Vercruyssen et al have analyzed the I,V curve, without any LO-equivalent bias, of a model NSN system. 5 This work suggests that the most appropriate model for an HEB under operating conditions is that of a potential-well in the superconducting gap in the center of the NbN, analogous the bimodal superconducting state described by Vercruyssen et al. Hot quasiparticles in the well can not diffuse out and can only cool by electron-phonon processes, those with higher energies than the heights of the walls of the well can diffuse out. Using this working hypothesis we have carried out experiments on a sub-micrometer NbN bridge connected to a gold (Au) planar spiral antenna. An in situ process is used to deposit Au on NbN. The Au is removed in the center to define the uncovered NbN, which will act as the superconducting mixer itself. The antenna is deposited on the remaining Au layer on the NbN. The Au contacts suppress the energy gap of the NbN film located underneath the gold layer 7,8 . The measured resistive transition is shown in Fig.1. It clearly shows a T c of the bilayer at 6.2 K and the resistive transition of the NbN itself around 9 K. In addition we show the measured noise bandwidth (red squares) for different bath temperatures. Clearly the noise bandwidth increases strongly by increasing the bath temperature from 5 K to 8 K, up to 13 GHz. We interpret this pattern as evidence for improved out-diffusion of hot electrons due to normal banks and a shallow superconducting potential well compared to k B T. As expected the noise temperature in this regime is much bigger than when biased at 4.2 K. R EFERENCES 1 W. Zhang, P. Khosropanah, J. R. Gao, E. L. Kollberg, K. S. Yngvesson, T. Bansal, R. Barends, and T. M. Klapwijk Appl. Phys. Lett. 96, 111113, (2010). 2 Ivan Tretyakov, Sergey Ryabchun, Matvey Finkel, Anna Maslennikova, Natalia Kaurova, Anastasia Lobastova, Boris Voronov, and Gregory Gol’tsman Appl. Phys. Lett. 98, 033507 (2011). 3 D. E. Prober, Appl. Phys. Lett. 62, 2119 (1992). 4 R. Barends, M. Hajenius, J. R. Gao, and T. M. Klapwijk, Appl. Phys. Lett. 87, 263506 (2005). 5 N. Vercruyssen, T. G. A. Verhagen, M. G. Flokstra, J. P. Pekola, and T. M. Klapwijk Physical Review B 85, 224503 (2012). |
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1159 |
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Titova, N. A.; Baeva, E. M.; Kardakova, A. I.; Goltsman, G. N. |
| Title |
Fabrication of NbN/SiNx:H/SiO2 membrane structures for study of heat conduction at low temperatures |
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Conference Article |
| Year |
2020 |
Publication |
J. Phys.: Conf. Ser. |
Abbreviated Journal |
J. Phys.: Conf. Ser. |
| Volume |
1695 |
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012190 |
| Keywords |
NbN films, insulating membrane |
| Abstract |
Here we report on the development of NbN/SiNx:H/SiO2-membrane structures for investigation of the thermal transport at low temperatures. Thin NbN films are known to be in the regime of a strong electron-phonon coupling, and one can assume that the phononic and electronic baths in the NbN are in local equilibrium. In such case, the cooling of the NbN-based devices strongly depends on acoustic matching to the substrate and substrate thermal characteristics. For the insulating membrane much thicker than the NbN film, our preliminary results demonstrate that the membrane serves as an additional channel for the thermal relaxation of the NbN sample. That implies a negligible role of thermal boundary resistance of the NbN-SiNx:H interface in comparison with the internal thermal resistance of the insulating membrane. |
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1742-6588 |
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1165 |
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