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Gershenzon, E. M.; Gol'tsman, G. N.; Multanovskii, V. V.; Ptitsina, N. G. |
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Title |
Kinetics of electron and hole binding into excitons in germanium |
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Year |
1983 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
57 |
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2 |
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369-376 |
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Ge, electron and hole binding |
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The kinetics of binding of free carriers'into excitons under stationary and nonstationary conditions is studied by investigating the submillimeter photoconductivity of Ge in a wide range of temperatures and of excitation levels. It is shown that the absolute values and the temperature dependence of the binding cross section (o- T-'.' ) can be satisfactorily described by the cascade recombination theory. The value of o and its temperature dependence differ significantly from the cross sections, measured in the same manner, for capture by attracting small impurities. Under nonstationary conditions, just as in the case of recombination with shallow impurities, a signifi- cant role is played by the sticking of the carriers in highly excited states. |
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1711 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semenov, A. D.; Sergeev, A. V. |
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Title |
Heating of electrons in a superconductor in the resistive state by electromagnetic radiation |
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Journal Article |
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Year |
1984 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
59 |
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2 |
Pages |
442-450 |
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Keywords |
Nb HEB |
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The effect of heating of electrons relative to phonons is observed and investigated in a superconducting film that is made resistive by current and by an external magnetic field. The effect is manifested by an increase of the film resistance under the influence of the electromagnetic radiation, and is not selective in the frequency band 10^10-10^15 Hz. The independence of the effect of frequency under conditions of strong scattering by static defects is attributed to the decisive role of electron-electron collisions in the distribution function. The experimentally obtained characteristic time of resistance variation near the superconducting transition corresponds to the relaxation time of the order parameter, while at lower temperatures and fields it corresponds to the time of the inelastic electron-phonon interaction. |
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RPLAB @ phisix @ |
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983 |
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Gershenzon, E. M.; Gershenzon, M. E.; Gol'tsman, G. N.; Semyonov, A. D.; Sergeev, A. V. |
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Title |
Heating of electrons in superconductor in the resistive state due to electromagnetic radiation |
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Journal Article |
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1984 |
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Solid State Communications |
Abbreviated Journal |
Solid State Communications |
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Volume |
50 |
Issue |
3 |
Pages |
207-212 |
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Nb HEB |
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The effect of heating electrons with respect to phonons in a thin superconducting film driven into the resistive state by the current and the external magnetic field has been observed and investigated. This effect caused by the electromagnetic radiation is manifested in the increased resistance of the film and is not selective over the frequency range from 1010 to 1015 Hz. That the effect is frequency independent under the conditions of strong electron scattering caused by static defects is explained by the decisive role of electron -electron collisions in forming the distribution function. The characteristic time of resistance change, obtained experimentally, corresponds to the relaxation time of the order parameter near the superconducting transition and to the relaxation time of the nonelastic electron-phonon interaction at lower temperatures and in lower magnetic fields. |
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0038-1098 |
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1709 |
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Author |
Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. |
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Title |
Character of submillimeter photoconductivity in n-lnSb |
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Journal Article |
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1979 |
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Sov. Phys. JETP |
Abbreviated Journal |
Sov. Phys. JETP |
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Volume |
49 |
Issue |
1 |
Pages |
121-128 |
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A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). |
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RPLAB @ phisix @ |
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985 |
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Gershenzon, E. M.; Goltsman, G. N. |
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Title |
Zeeman effect in excited-states of donors in germanium |
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1972 |
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Sov. Phys. Semicond. |
Abbreviated Journal |
Sov. Phys. Semicond. |
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6 |
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3 |
Pages |
509 |
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Ge, donors, Zeeman effect |
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Amer Inst Physics 1305 Walt Whitman Rd, Ste 300, Melville, Ny 11747-4501 Usa |
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1737 |
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Ptitsina, N. G.; Chulkova, G. M.; Gershenzon, E. M. |
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Title |
Influence of the interference of electron-phonon and electron-impurity scattering on the conductivity of unordered Nb films |
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1995 |
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JETP |
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JETP |
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80 |
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5 |
Pages |
960-964 |
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The temperature dependence of the resistivity of Nb thin films has been studied at T=4.2-300 K. It has been shown that quantum interference between electron-phonon and electron-impurity scattering determines the temperature dependence of the resistivity of the films investigated over a broad temperature range. The magnitude of the contribution of the electron-phonon-impurity,interference is described satisfactorily by the theory developed by Reizer and Sergeev {Zh. Eksp. Teor. Fiz. 92,2291 (1987) [Sov. Phys. JETP 65, 1291 (1987)l). The interaction constants of electrons with longitudinal and transverse phonons in Nb films have been determined for the first time by comparing the experimental data with the theory. The values of the constants obtained are consistent with the data on the inelastic electron-phonon scattering times in the films investigated. The contribution of the transverse phonons is dominant both in the interference correction to the resistivity and in the electron energy relaxation. |
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RPLAB @ phisix @ |
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989 |
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Kawamura, J.; Tong, C.-Y. E.; Blundell, R.; Papa, D. C.; Hunter, T. R.; Patt, F.; Gol’tsman, G.; Gershenzon, E. |
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Title |
Terahertz-frequency waveguide NbN hot-electron bolometer mixer |
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Journal Article |
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2001 |
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IEEE Trans. Appl. Supercond. |
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IEEE Trans. Appl. Supercond. |
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11 |
Issue |
1 |
Pages |
952-954 |
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Keywords |
NbN HEB mixers |
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We have developed a low-noise waveguide heterodyne receiver for operation near 1 THz using phonon-cooled NbN hot-electron bolometers. The mixer elements are submicron-sized microbridges of 4 nm-thick NbN film fabricated on a quartz substrate. Operating at a bath temperature of 4.2 K, the double-sideband receiver noise temperature is 760 K at 1.02 THz and 1100 K at 1.26 THz. The local oscillator is provided by solid-state sources, and power measured at the source is less than 1 /spl mu/W. The intermediate frequency bandwidth exceeds 2 GHz. The receiver was used to make the first ground-based heterodyne detection of a celestial spectroscopic line above 1 THz. |
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1558-2515 |
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1546 |
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Hübers, H.-W.; Schubert, J.; Krabbe, A.; Birk, M.; Wagner, G.; Semenov, A.; Gol’tsman, G.; Voronov, B.; Gershenzon, E. |
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Title |
Parylene anti-reflection coating of a quasi-optical hot-electron-bolometric mixer at terahertz frequencies |
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2001 |
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Infrared Physics & Technology |
Abbreviated Journal |
Infrared Physics & Technology |
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42 |
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1 |
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41-47 |
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NbN HEB mixers, anti-reflection coating |
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Parylene C was investigated as anti-reflection coating for silicon at terahertz frequencies. Measurements with a Fourier-transform spectrometer show that the transmittance of pure silicon can be improved by about 30% when applying a layer of Parylene C with a quarter wavelength optical thickness. The 10% bandwidth of this coating extends from 1.5 to 3 THz for a center frequency of 2.3–2.5 THz, where the transmittance is constant. Heterodyne measurements demonstrate that the noise temperature of a hot-electron-bolometric mixer can be reduced significantly by coating the silicon lens of the hybrid antenna with a quarter wavelength Parylene C layer. Compared to the same mixer with an uncoated lens the improvement is about 30% at a frequency of 2.5 THz. |
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1350-4495 |
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1548 |
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Antipov, S. V.; Svechnikov, S. I.; Smirnov, K. V.; Vakhtomin, Y. B.; Finkel, M. I.; Goltsman, G. N.; Gershenzon, E. M. |
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Title |
Noise temperature of quasioptical NbN hot electron bolometer mixers at 900 GHz |
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2001 |
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Physics of Vibrations |
Abbreviated Journal |
Physics of Vibrations |
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9 |
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4 |
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242-245 |
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NbN HEB mixers |
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1069-1227 |
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1550 |
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Svechnikov, S. I.; Antipov, S. V.; Vakhtomin, Y. B.; Goltsman, G. N.; Gershenzon, E. M.; Cherednichenko, S. I.; Kroug, M.; Kollberg, E. |
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Conversion and noise bandwidths of terahertz NbN hot-electron bolometer mixers |
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2001 |
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Physics of Vibrations |
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Physics of Vibrations |
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9 |
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3 |
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205-210 |
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NbN HEB mixers |
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1069-1227 |
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